LAYERED INTERFACE COATING FOR IMPROVED FIBER PROTECTION AND MATRIX CRACK SEALING

    公开(公告)号:US20240228388A9

    公开(公告)日:2024-07-11

    申请号:US17970993

    申请日:2022-10-21

    发明人: Evan B. Callaway

    摘要: A coated fiber structure for use in a ceramic matrix composite comprises a fiber extending along a fiber axis and an interface coating arrangement applied to and circumscribing the fiber. The interface coating arrangement comprises: a first boron nitride layer extending coaxially about and in direct contact with the fiber, a first silicon-doped boron nitride layer extending coaxially about and in direct contact with the first boron nitride layer, a carbon layer extending coaxially about and in direct contact with the first silicon-doped boron nitride layer, a second boron nitride layer extending coaxially about and in direct contact with the carbon layer, and a second silicon-doped boron nitride layer extending coaxially about and in direct contact with the second boron nitride layer. A silicon content of the first silicon-doped boron nitride layer is higher than the silicon content of the second silicon-doped boron nitride layer.

    LAYERED INTERFACE COATING FOR IMPROVED FIBER PROTECTION AND MATRIX CRACK SEALING

    公开(公告)号:US20240132413A1

    公开(公告)日:2024-04-25

    申请号:US17970993

    申请日:2022-10-20

    发明人: Evan B. Callaway

    摘要: A coated fiber structure for use in a ceramic matrix composite comprises a fiber extending along a fiber axis and an interface coating arrangement applied to and circumscribing the fiber. The interface coating arrangement comprises: a first boron nitride layer extending coaxially about and in direct contact with the fiber, a first silicon-doped boron nitride layer extending coaxially about and in direct contact with the first boron nitride layer, a carbon layer extending coaxially about and in direct contact with the first silicon-doped boron nitride layer, a second boron nitride layer extending coaxially about and in direct contact with the carbon layer, and a second silicon-doped boron nitride layer extending coaxially about and in direct contact with the second boron nitride layer. A silicon content of the first silicon-doped boron nitride layer is higher than the silicon content of the second silicon-doped boron nitride layer.