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1.发明公开公开(公告)号：US20240239716A1
公开(公告)日：2024-07-18
申请号：US18562171
申请日：2022-05-23
Applicant: AMOSENSE CO.,LTD
Inventor： Ji Hyung LEE
IPC: C04B41/50 , C04B35/584 , C04B35/626 , C04B35/632 , C04B41/00 , C04B41/45 , C04B41/87 , H01J37/32 , H01L21/683 , H05B3/26
CPC classification number: C04B41/5045 , C04B35/584 , C04B35/6261 , C04B35/62675 , C04B35/6268 , C04B35/632 , C04B41/0036 , C04B41/4529 , C04B41/5031 , C04B41/87 , H01J37/32724 , H01L21/6833 , H05B3/265 , C04B2235/3206 , C04B2235/3225 , C04B2235/3878 , C04B2235/3882 , C04B2235/428 , C04B2235/5436 , C04B2235/5445 , C04B2235/6562 , C04B2235/6584 , C04B2235/9607 , C04B2235/9669 , H01J2237/2007
Abstract: An electrostatic chuck is provided. Implemented according to an embodiment of the present invention is an electrostatic chuck comprising: a silicon nitride sintered body; a surface modification layer covering at least a portion of the external surface of the silicon nitride sintered body and having corrosion resistance and plasma resistance; and an electrostatic electrode laid inside the silicon nitride sintered body. Therefore, the electrostatic chuck includes a ceramic sintered body of silicon nitride, and thus has excellent plasma resistance, chemical resistance, and thermal shock resistance while exhibiting an equivalent or similar level of heat dissipation performance compared to ceramic sintered bodies of aluminum nitride that have been conventionally widely used, so that the electrostatic chuck can be widely used in semiconductor processes.
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2.发明授权
公开(公告)号：US12037290B2
公开(公告)日：2024-07-16
申请号：US17246733
申请日：2021-05-03
Inventor： Zhenxiao Fu , Jianmei Liu , Haidong Ren , Yun Liu , Terry James Frankcombe , Xiuhua Cao , Shiwo Ta
IPC: C04B35/457 , C04B35/626 , C04B35/63 , C04B35/64 , H01G4/12
CPC classification number: C04B35/457 , C04B35/6262 , C04B35/6264 , C04B35/62695 , C04B35/6303 , C04B35/64 , H01G4/1209 , C04B2235/3224 , C04B2235/3227 , C04B2235/3293 , C04B2235/3409 , C04B2235/442 , C04B2235/604 , C04B2235/6562 , C04B2235/6567 , C04B2235/662 , C04B2235/768
Abstract: Disclosed herein is a doped perovskite barium stannate material, which has a chemical general formula of BaAxBxSn1-2xO3, where A is at least one of In, Y, Bi and La; B is at least one of Nb and Ta, and 0
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公开(公告)号：US20240228384A1
公开(公告)日：2024-07-11
申请号：US18401725
申请日：2024-01-02
Applicant: CENTRAL SOUTH UNIVERSITY , SF DIAMOND CO., LTD.
Inventor： Shaohe ZHANG , Yulu LI , Dongpeng ZHAO , Xiangwang KONG , Linglong RONG , Jincheng LI , Hua GAO , Dongyu WU , Jingjing WU , Leilei LIU , Pinghe SUN , Haijiang FANG
IPC: C04B35/56 , B28B1/00 , B33Y10/00 , B33Y70/10 , C04B35/5831 , C04B35/626 , C04B35/634
CPC classification number: C04B35/5626 , B28B1/001 , B33Y10/00 , B33Y70/10 , C04B35/5831 , C04B35/62695 , C04B35/6342 , C04B2235/3847 , C04B2235/386 , C04B2235/6026 , C04B2235/6562 , C04B2235/6567 , C04B2235/658 , C04B2235/75
Abstract: The disclosure provides a gradient structure cubic boron nitride composite sheet and a preparation method thereof. The gradient structure cubic boron nitride composite sheet consists of a cemented carbide substrate, a gradient transition layer, and a CBN layer from bottom to top. The gradient transition layer consists of N gradient layers, and the N is 4 to 18. From bottom to top, there are sequentially a first gradient layer, a second gradient layer, an Nth gradient layer, and so on. Any of the gradient layers consists of CBN and cemented carbide, in which the volume fraction of the cemented carbide in the Nth layer is 5 to 30% less than the volume fraction of the cemented carbide in the N−1th layer, and the volume fraction of the CBN in the Nth layer is 5 to 30% more than the volume fraction of the CBN in the N−1th layer.
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公开(公告)号：US12006265B2
公开(公告)日：2024-06-11
申请号：US17072100
申请日：2020-10-16
Applicant: NORTHWESTERN POLYTECHNICAL UNIVERSITY
Inventor： Laifei Cheng , Fang Ye , Chuchu Guo , Litong Zhang
IPC: C04B35/80 , C04B35/622
CPC classification number: C04B35/62281 , C04B35/80 , C04B2235/483 , C04B2235/5244 , C04B2235/5252 , C04B2235/5264 , C04B2235/6562 , C04B2235/6567 , C04B2235/6583 , C04B2235/77
Abstract: Process for the preparation of a ceramic nanowire preform, in particular, a process for the preparation of a ceramic nanowire preform by combining a template technique and a preceramic polymer conversion technique. The process uses carbonaceous material as a template, and prepares an isotropic ceramic nanowire preform by controlling the ratio of a precursor to a solvent, the amount of a catalyst and the ratio of a prepared precursor solution to the carbonaceous template, wherein the preform is isotropic and has lower bulk density and higher volume fraction.
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5.发明公开
公开(公告)号：US20240140874A1
公开(公告)日：2024-05-02
申请号：US18494743
申请日：2023-10-25
Inventor： YuanYuan Yang , XiaoZhen Li , MengJiang Xing , YanLing Luo , HongYu Yang , QingYang Fan , Liang Chai , YiFang Zhang
IPC: C04B35/495 , C04B35/626 , C04B35/634 , C04B35/638 , C04B35/64 , H01B3/12
CPC classification number: C04B35/495 , C04B35/6262 , C04B35/62655 , C04B35/62695 , C04B35/63416 , C04B35/638 , C04B35/64 , H01B3/12 , C04B2235/3232 , C04B2235/3244 , C04B2235/3255 , C04B2235/3258 , C04B2235/3284 , C04B2235/604 , C04B2235/6562 , C04B2235/6567 , C04B2235/661
Abstract: An ion-modified microwave dielectric ceramic is provided and a chemical formula thereof is Zn0.15Nb0.3[Ti1-x(W1/3Zr1/2)x]0.55O2. In the chemical formula, x is in a range of 0.01 to 0.03. The ion-modified microwave dielectric ceramic includes the following components in parts by weight: 12.58-12.67 parts of ZnO, 41.11-41.39 parts of TiO2, 43.93-45.14 parts of Nb2O5, 0.44-1.31 parts of WO3, and 0.35-1.05 parts of ZrO2. A preparation method of the ion-modified microwave dielectric ceramic can be applied to different industrial requirements, such as electronic components, communication equipment, and microwave components; and the obtained ion-modified microwave dielectric ceramic expands a practical value of a Zn0.15Nb0.3Ti0.55O2 series microwave dielectric ceramic in electronic ceramic manufacturing.
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6.发明公开
公开(公告)号：US20240067575A1
公开(公告)日：2024-02-29
申请号：US18457912
申请日：2023-08-29
Applicant: Purdue Research Foundation
CPC classification number: C04B35/83 , B33Y10/00 , B33Y40/20 , B33Y70/10 , C04B35/62873 , C04B35/64 , C04B2235/422 , C04B2235/48 , C04B2235/5248 , C04B2235/6021 , C04B2235/6026 , C04B2235/6562 , C04B2235/661
Abstract: Methods of manufacturing carbon/carbon preforms and carbon/carbon composites formed therefrom. Such a method includes extruding a polymer composite material using an extrusion deposition additive manufacturing process to form a preform, and heating the preform via pyrolysis to form the carbon/carbon composite.
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公开(公告)号：US20230382808A1
公开(公告)日：2023-11-30
申请号：US18027680
申请日：2021-09-24
Applicant: Kuraray Noritake Dental Inc.
Inventor： Atsushi MATSUURA
CPC classification number: C04B35/48 , A61K6/818 , C04B2235/3225 , C04B2235/6562 , C04B2235/6567
Abstract: The present invention provides a method of production of a zirconia sintered body by which a zirconia molded body or zirconia pre-sintered body having a plurality of layers containing different amounts of stabilizer is sintered in a short time period to produce a zirconia sintered body having hardly noticeable stripes between layers differing in yttria content. The present invention relates to a method for producing a zirconia sintered body, comprising a firing step of firing a zirconia molded body or a zirconia pre-sintered body,
the zirconia molded body or the zirconia pre-sintered body comprising a plurality of layers containing a stabilizer,
the plurality of layers including layers having different stabilizer contents,
the firing step comprising at least three stages of temperature-increasing process including a first temperature-increasing step (H1), a second temperature-increasing step (H2), and a third temperature-increasing step (H3),
the method satisfying HR2=more than 0° C./min and less than 50° C./min, HR3=5 to 150° C./min, and HR3/HR2>1, where HR2 is a rate of temperature increase in H2, and HR3 is a rate of temperature increase in H3,
the temperature-increasing process having start temperatures that are 1,000° C. or less in H1, more than 1,250° C. and 1,450° C. or less in H2, and 1,450° C. or more and 1,550° C. or less in H3,
the temperature-increasing process having end temperatures that are more than 1,250° C. and 1,450° C. or less in H1, 1,450° C. or more and 1,550° C. or less in H2, and 1,500° C. or more and 1,750° C. or less in H3.
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公开(公告)号：US11817339B2
公开(公告)日：2023-11-14
申请号：US17041935
申请日：2019-03-26
Applicant: SUMITOMO OSAKA CEMENT CO., LTD.
Inventor： Nobuhiro Hidaka , Naoto Kimura
IPC: H01T23/00 , H01L21/683 , C04B35/117 , C04B35/64 , H01J37/32
CPC classification number: H01L21/6833 , C04B35/117 , C04B35/64 , H01J37/32715 , C04B2235/3217 , C04B2235/3834 , C04B2235/3839 , C04B2235/422 , C04B2235/6562 , C04B2235/785 , C04B2235/786 , C04B2235/85 , H01J2237/334
Abstract: This electrostatic chuck device (1) includes a base (11) having one main surface serving as a mounting surface (19) on which a plate-shaped sample is mounted, and an electrode for electrostatic attraction (13) provided on the side opposite to the mounting surface (19) in the base (11), in which the base (11) consists of a ceramic material as a forming material, and the ceramic material contains aluminum oxide and silicon carbide as main components thereof, and has a layered graphene present at a grain boundary of the aluminum oxide.
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公开(公告)号：US11776752B2
公开(公告)日：2023-10-03
申请号：US17317608
申请日：2021-05-11
Applicant: TAIYO YUDEN CO., LTD.
Inventor： Yasuhiro Matsumoto , Koichiro Morita
IPC: H01G4/12 , C04B35/468 , H01G4/30 , C04B35/626 , C04B35/634 , C04B35/64
CPC classification number: H01G4/1245 , C04B35/4682 , C04B35/6261 , C04B35/6342 , C04B35/64 , H01G4/30 , C04B2235/3224 , C04B2235/3236 , C04B2235/3244 , C04B2235/442 , C04B2235/5454 , C04B2235/6025 , C04B2235/6562 , C04B2235/6567
Abstract: A multilayer ceramic capacitor includes a multilayer structure having a substantially rectangular parallelepiped shape and including dielectric layers and internal electrode layers that are alternately stacked, the dielectric layers being mainly composed of BaTiO3, the internal electrode layers being alternately exposed to two edge faces of the multilayer chip opposite to each other. A Zr/Ti ratio is 0.02 or more and 0.10 or less in a capacity section. A Ba/Ti ratio is more than 0.900 and less than 1.010 in the capacity section. A Eu/Ti ratio is 0.005 or more and 0.05 or less in the capacity section. A Mn/Ti ratio is 0.0005 or more and 0.05 or less in the capacity section. A total amount of a rare earth element or rare earth elements is less than the amount of Eu.
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公开(公告)号：US20230295050A1
公开(公告)日：2023-09-21
申请号：US18122190
申请日：2023-03-16
Applicant: TOSOH CORPORATION
Inventor： Takeshi ITO , Yuji MATSUMURA , Haruki MORI , Hikaru TAKESHIMA , Tomotaka SHIMOYAMA
IPC: C04B35/488 , C04B35/645
CPC classification number: C04B35/4885 , C04B35/6455 , C04B2235/6581 , C04B2235/786 , C04B2235/9661 , C04B2235/3217 , C04B2235/3272 , C04B2235/3277 , C04B2235/3225 , C04B2235/3246 , C04B2235/6562 , C04B2235/664 , C04B2235/663
Abstract: A sintered body includes zirconia, iron, cobalt and titanium, in which a total iron and cobalt content is more than 0.1 mass % and less than 3 mass % and a titanium content is more than 3 mass %.
