公开(公告)号：US11866848B1

公开(公告)日：2024-01-09

申请号：US16905646

申请日：2020-06-18

Applicant: DRS Network & Imaging Systems, LLC

Inventor： Lance Robertson ,  Luigi Colombo ,  Victor Perez-Rubio ,  Tim Svoboda ,  Fred Raymel Harris ,  Kathryn O'Brien

IPC: C30B9/06 ,  C30B29/46 ,  C30B11/00 ,  C30B29/48 ,  C30B27/02 ,  C30B15/00

CPC classification number: C30B9/06 ,  C30B11/00 ,  C30B15/007 ,  C30B27/02 ,  C30B29/46 ,  C30B29/48

Abstract: A method of growing a cadmium zinc telluride (CdZnTe) crystal includes providing a crucible including a solid CdZnTe source and forming a Te-rich Cd—Zn—Te melt on the solid CdZnTe source. The method also includes positioning a CdZnTe seed crystal in physical contact with the Te-rich Cd—Zn—Te melt and growing the CdZnTe crystal from the Te-rich Cd—Zn—Te melt.

公开(公告)号：US10718065B2

公开(公告)日：2020-07-21

申请号：US15574216

申请日：2016-10-25

Applicant: LG Chem, Ltd.

Inventor： Chan Yeup Chung ,  Jung Min Ko ,  Dae Sung Kim ,  Sung Soo Lee ,  Chang Sun Eun

IPC: C30B29/06 ,  C30B29/36 ,  H01L21/02 ,  C30B9/10 ,  C30B19/04 ,  C30B9/06

Abstract: Provided is a silicon-based molten composition including silicon, carbon, and a metal in which a solubility parameter (Csisol) defined by Equation (1) below is less than −0.37, wherein a SiC single crystal is formed by a solution method: Csisol=A−B+μ1−μ2  Equation (1) in Equation (1) above, A is a first energy (A) of a first evaluation lattice including silicon atoms, a carbon atom, and metal atoms in a silicon crystal lattice including metals and carbons, B is a second energy (B) of a second evaluation lattice including silicon atoms and metal atoms in a silicon crystal lattice including metals, μ1 is a constant of −5.422, and μ2 is a constant of −9.097.

公开(公告)号：US10693032B2

公开(公告)日：2020-06-23

申请号：US15713967

申请日：2017-09-25

Applicant: TOYODA GOSEI CO., LTD.

Inventor： Miki Moriyama ,  Shiro Yamazaki ,  Shohei Kumegawa

IPC: C30B19/02 ,  H01L31/18 ,  C30B29/40 ,  C30B9/12 ,  C30B19/12 ,  C30B25/02 ,  C30B9/10 ,  C30B19/00 ,  C30B9/06 ,  C30B25/18

Abstract: The seed substrate comprises a base substrate and a base layer comprising a Group III nitride semiconductor formed on the base substrate, which has a high dislocation density region and a low dislocation density region. The planar pattern of the high dislocation density region is a honeycomb pattern. A hollow exists between the base substrate and the low dislocation density region. The object layer is grown through a flux method using the seed substrate. The high dislocation density region is melted back at an initial stage of crystal growth, and thereafter, the object layer is grown on the top surface of the low dislocation density region. A cavity remains between the high dislocation density region and the object layer. The presence of the cavity and the hollow makes easy to peel the object layer from the seed substrate.

公开(公告)号：US10151046B2

公开(公告)日：2018-12-11

申请号：US15510038

申请日：2015-09-10

Applicant: National University Corporation Nagoya University ,  Central Glass Co., Ltd.

Inventor： Toru Ujihara ,  Shunta Harada ,  Daiki Koike ,  Tomonori Umezaki

IPC: C30B19/10 ,  C30B19/12 ,  C30B29/36 ,  C30B19/06 ,  C23C14/06 ,  H01L21/02 ,  C30B9/06 ,  C30B15/30

Abstract: Provided is a method that allows growing a single crystal of silicon carbide on an off-substrate of silicon carbide while suppressing surface roughening. The method for producing a crystal of silicon carbide includes rotating a seed crystal of silicon carbide while bringing the seed crystal into contact with a starting material solution containing silicon and carbon. A crystal growth surface of the seed crystal has an off-angle, and the position of a rotation center of the seed crystal lies downstream of the central position of the seed crystal in a step flow direction that is a formation direction of the off-angle.

公开(公告)号：US10132002B2

公开(公告)日：2018-11-20

申请号：US15642342

申请日：2017-07-06

Applicant: Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： Ke-Nan Zhang ,  Ming-Zhe Yan ,  Shu-Yun Zhou ,  Yang Wu ,  Shou-Shan Fan

IPC: C01B19/00 ,  C30B9/06 ,  C30B25/00 ,  C30B29/46

Abstract: The disclosure relates to a semimetal compound of Pt and a method for making the same. The semimetal compound is a single crystal material of PtTe2. The method comprises: providing a PtTe2 polycrystalline material; placing the PtTe2 polycrystalline material in a reacting chamber; placing chemical transport medium in the reacting chamber; evacuating the reacting chamber to be vacuum less than 10 Pa; placing the reacting chamber in a temperature gradient, wherein the reacting chamber has a first end in a temperature from 1200 degree Celsius to 1000 degree Celsius and a second end opposite to the first end and in a temperature from 1000 degree Celsius to 900 degree Celsius; and keeping the reacting chamber in the temperature gradient for 10 days to 30 days.

公开(公告)号：US10041186B2

公开(公告)日：2018-08-07

申请号：US15238945

申请日：2016-08-17

Applicant: NGK INSULATORS, LTD.

Inventor： Katsuhiro Imai ,  Makoto Iwai ,  Masahiro Sakai ,  Takanao Shimodaira ,  Shuhei Higashihara ,  Takayuki Hirao

IPC: C30B9/06 ,  C30B9/12 ,  C30B29/38 ,  C30B9/00 ,  C30B29/40

Abstract: It is used a crucible containing a flux and a source material, a reaction vessel containing the crucible, an intermediate vessel containing the reaction vessel, and a pressure vessel containing the intermediate vessel and used to fill a gas comprising at least a nitrogen atom. When the flux and the source material are melted by heating to grow the nitride crystal, a vapor of an organic compound is provided in a space outside of the reaction vessel and inside of the intermediate vessel.

公开(公告)号：US10023975B2

公开(公告)日：2018-07-17

申请号：US15000871

申请日：2016-01-19

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor： Nobuhira Abe

IPC: C30B15/10 ,  C30B29/36 ,  C30B9/06 ,  C30B15/14

Abstract: A method for producing a SiC single crystal by a solution method of bringing a seed crystal into contact with a Si solution of C and pulling up a SiC single crystal, the production method of a SiC single crystal including connecting the seed crystal to a seed crystal holder, disposing a cooling mechanism on the seed crystal holder, and promoting cooling of the seed crystal holder by the cooling mechanism in accordance with an increase in the pulling amount of the SiC single crystal.

公开(公告)号：US20110259261A1

公开(公告)日：2011-10-27

申请号：US13177057

申请日：2011-07-06

Applicant: Makoto IWAI ,  Shuhei Higashihara ,  Yasuo Kitaoka ,  Yusuke Mori ,  Takayuki Sato ,  Seiji Nagai

Inventor： Makoto IWAI ,  Shuhei Higashihara ,  Yasuo Kitaoka ,  Yusuke Mori ,  Takayuki Sato ,  Seiji Nagai

IPC: C30B9/06 ,  C30B25/00

CPC classification number: C30B29/403 ,  C30B19/02 ,  C30B19/06 ,  C30B29/406 ,  C30B35/002

Abstract: It is provided a method of growing a single crystal by flux process from a melt containing sodium, in that a flux is contained in a reaction vessel made of yttrium-aluminum garnet. Compared with the case that an alumina or yttria vessel is used, it can be successfully obtained a single crystal whose incorporation amounts of oxygen and silicon can be considerably reduced, residual carrier density can be lowered, and electron mobility and specific resistance can be improved.

Abstract translation: 本发明提供一种通过助熔剂从包含钠的熔体中生长单晶的方法，其特征在于，在由钇 - 铝石榴石制成的反应容器中含有助熔剂。 与使用氧化铝或氧化钇容器的情况相比，可以成功地获得能够显着降低氧和硅的掺入量的单晶，可以降低残留载流子密度，并且可以提高电子迁移率和电阻率。

公开(公告)号：US4728388A

公开(公告)日：1988-03-01

申请号：US759758

申请日：1985-07-29

Applicant: Alain Fillot ,  Jean Gallet ,  Sylvain Paltrier ,  Bernard Schaub

Inventor： Alain Fillot ,  Jean Gallet ,  Sylvain Paltrier ,  Bernard Schaub

IPC: C30B13/00 ,  C30B13/02 ,  C30B29/48 ,  C30B9/06

CPC classification number: C30B13/02 ,  C30B13/00 ,  C30B29/48

Abstract: The invention relates to a process for the preparation of a binary initial solvent zone for the crystallization in monocrystal form of a ternary or quaternary compound of given composition and containing Cd and Hg. It consists of choosing on the phase equilibrium diagram of the compound, the Cd and Hg concentration and the temperature which crystallization is to take place. When raised to this temperature, the initial solvent zone is able to dissolve the compound until a solvent zone in thermodynamic equilibrium therewith is obtained and on the basis of which it is possible to bring about crystallization. The composition of the initial solvent zone and the temperature at which it is to be prepared are determined on the diagram.

Abstract translation: 本发明涉及制备二元初始溶剂区的方法，用于单晶形式的给定组合物的三元或四元化合物的结晶并含有Cd和Hg。 它包括选择化合物的相平衡图，Cd和Hg的浓度以及结晶的温度。 当升至该温度时，初始溶剂区域能够溶解化合物直到获得与其热力学平衡的溶剂区域，并且在此基础上可以引起结晶。 初始溶剂区的组成和其制备时的温度如图所示。

公开(公告)号：US4572763A

公开(公告)日：1986-02-25

申请号：US513294

申请日：1983-07-13

Applicant: Jun-ichi Nishizawa

Inventor： Jun-ichi Nishizawa

IPC: C30B19/04 ,  C30B29/48 ,  H01L21/208 ,  H01L21/368 ,  C30B9/06

CPC classification number: C30B19/04 ,  C30B29/48 ,  Y10S117/90 ,  Y10S117/906

Abstract: In conducting a liquid phase epitaxial growth of a Zn crystal on a substrate wherein a batch of Se melt serving as a solvent is used and relying on a vapor pressure controlling technique and a temperature difference method, a Zn vapor pressure controlling region is disposed, via the Se melt, in a direction vertical to the surface of the substrate which is contained in the growth region, and a ZnSe source crystal is disposed in such a way that it is supplied into the Se melt in a lateral direction of this melt. Whereby, a ZnSe single crystal having a good crystal perfection, and a good linearity of the thickness of the grown crystal relative to time can be obtained.

Abstract translation: 在使用一批作为溶剂的Se熔体作为溶剂的基底上进行Zn晶体的液相外延生长，并依靠蒸气压控制技术和温差法，通过 Se沿垂直于包含在生长区域中的衬底的表面的方向熔化，并且ZnSe源晶体以这样的方式设置，使得它在该熔体的横向上被供应到Se熔体中。 由此，可以获得具有良好晶体完整性和生长晶体相对于时间的厚度线性良好的ZnSe单晶。