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公开(公告)号：US11873576B2
公开(公告)日：2024-01-16
申请号：US16630952
申请日：2019-05-22
Applicant: LG Chem, Ltd.
Inventor： Horim Lee , Junghwan Kim , Chanyeup Chung , Jung Min Ko
CPC classification number: C30B15/14
Abstract: A silicon-based molten composition according to an exemplary embodiment is used in a solution growing method for forming a silicon carbide single crystal, includes silicon (Si), yttrium (Y), and iron (Fe), and is expressed in Formula 1.
SiaYbFec [Formula 1]
In Formula 1, the a is equal to or greater than 0.4 and equal to or less than 0.8,
the b is equal to or greater than 0.2 and equal to or less than 0.3, and the c is equal to or greater than 0.1 and equal to or less than 0.2.-
公开(公告)号：US11046617B2
公开(公告)日：2021-06-29
申请号：US16638363
申请日：2018-09-19
Applicant: LG Chem, Ltd.
Inventor： Jungyu Kim , Dong Oh Shin , Jung Min Ko
IPC: C04B35/584 , C04B35/587 , C04B35/634 , C04B35/626 , C04B35/64 , C04B35/63
Abstract: A tape casting slurry composition for preparing a silicon nitride sintered body is provided. The tape casting slurry composition exhibits a viscosity suitable for tape casting, and thus, can easily control the area and thickness of the prepared green sheet, thereby preparing a large area silicon nitride sintered body having a thickness of a circuit board without post-processing processes such as grinding, and the like. Therefore, according to the present invention, a silicon nitride sintered body can be prepared using low cost raw materials by a simplified process, thereby securing efficiency and economic feasibility of the preparation process.
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公开(公告)号：US11203818B2
公开(公告)日：2021-12-21
申请号：US16494523
申请日：2018-05-30
Applicant: LG Chem, Ltd.
Inventor： Ho Rim Lee , Chan Yeup Chung , Manshik Park , Jung Min Ko
Abstract: The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al): SiaM1bSccAld (Formula 1) wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6, c is more than 0.01 and less than 0.1, and d is more than 0.01 and less than 0.1.
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公开(公告)号：US11193217B2
公开(公告)日：2021-12-07
申请号：US16493147
申请日：2018-11-01
Applicant: LG Chem, Ltd.
Inventor： Junghwan Kim , Ho Rim Lee , Chan Yeup Chung , Jung Min Ko , Manshik Park
Abstract: A silicon-based molten composition according to an exemplary embodiment of the present invention is used in a solution growing method for forming silicon carbide single crystal, and is expressed in Formula 1 including silicon (Si), chromium (Cr), vanadium (V), and aluminum (Al). SiaCrbVcAld [Formula 1] In Formula 1, a is equal to or greater than 0.4 and equal to or less than 0.9, b+c is equal to or greater than 0.1 and equal to or less than 0.6, c/(b+c) is equal to or greater than 0.05 and equal to or less than 0.95, and d is equal to or greater than 0.01 and equal to or less than 0.1.
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5.发明申请公开(公告)号：US20180245235A1
公开(公告)日：2018-08-30
申请号：US15754830
申请日：2016-10-25
Applicant: LG Chem, Ltd.
Inventor： Chan Yeup Chung , Ho Rim Lee , Jung Min Ko , Dae Sung Kim , Sung Soo Lee , Chang Sun Eun
Abstract: The present invention relates to a silicon-based molten composition for forming a SiC single crystal by a solution method, the composition containing silicon, carbon, and a metal satisfying 0.70≤Csisol≤1.510 with respect to a solubility parameter (Csisol) defined by the following Equation (1): Csisol=A−B+μ1−μ2 Equation (1) wherein, A is first energy (A) of a first evaluation lattice containing silicon atoms, carbon atoms, and metal atoms, in a silicon crystal lattice containing the metal and the carbon; B is second energy (B) of a second evaluation lattice containing silicon atoms and metal atoms, in a silicon crystal lattice containing the metal; μ1 is −5.422 as a constant value, and μ2 is −9.097 as a constant value.
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Patent Agency Ranking
6.发明授权公开(公告)号：US10718065B2
公开(公告)日：2020-07-21
申请号：US15574216
申请日：2016-10-25
Applicant: LG Chem, Ltd.
Inventor： Chan Yeup Chung , Jung Min Ko , Dae Sung Kim , Sung Soo Lee , Chang Sun Eun
Abstract: Provided is a silicon-based molten composition including silicon, carbon, and a metal in which a solubility parameter (Csisol) defined by Equation (1) below is less than −0.37, wherein a SiC single crystal is formed by a solution method: Csisol=A−B+μ1−μ2 Equation (1) in Equation (1) above, A is a first energy (A) of a first evaluation lattice including silicon atoms, a carbon atom, and metal atoms in a silicon crystal lattice including metals and carbons, B is a second energy (B) of a second evaluation lattice including silicon atoms and metal atoms in a silicon crystal lattice including metals, μ1 is a constant of −5.422, and μ2 is a constant of −9.097.
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7.发明申请公开(公告)号：US20200224330A1
公开(公告)日：2020-07-16
申请号：US16630952
申请日：2019-05-22
Applicant: LG Chem, Ltd.
Inventor： Horim Lee , Junghwan Kim , Chanyeup Chung , Jung Min Ko
Abstract: A silicon-based molten composition according to an exemplary embodiment is used in a solution growing method for forming a silicon carbide single crystal, includes silicon (Si), yttrium (Y), and iron (Fe), and is expressed in Formula 1. SiaYbFec [Formula 1] In Formula 1, the a is equal to or greater than 0.4 and equal to or less than 0.8, the b is equal to or greater than 0.2 and equal to or less than 0.3, and the c is equal to or greater than 0.1 and equal to or less than 0.2.
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公开(公告)号：US20200165167A1
公开(公告)日：2020-05-28
申请号：US16638363
申请日：2018-09-19
Applicant: LG Chem, Ltd.
Inventor： Jungyu Kim , Dong Oh Shin , Jung Min Ko
IPC: C04B35/584 , C04B35/63 , C04B35/634 , C04B35/626 , C04B35/64
Abstract: A tape casting slurry composition for preparing a silicon nitride sintered body is provided. The tape casting slurry composition exhibits a viscosity suitable for tape casting, and thus, can easily control the area and thickness of the prepared green sheet, thereby preparing a large area silicon nitride sintered body having a thickness of a circuit board without post-processing processes such as grinding, and the like. Therefore, according to the present invention, a silicon nitride sintered body can be prepared using low cost raw materials by a simplified process, thereby securing efficiency and economic feasibility of the preparation process.
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9.发明申请公开(公告)号：US20200010973A1
公开(公告)日：2020-01-09
申请号：US16494523
申请日：2018-05-30
Applicant: LG Chem, Ltd.
Inventor： Ho Rim Lee , Chan Yeup Chung , Manshik Park , Jung Min Ko
Abstract: The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al): SiaM1bSccAld (Formula 1) wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6, c is more than 0.01 and less than 0.1, and d is more than 0.01 and less than 0.1.
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10.发明授权公开(公告)号：US11427926B2
公开(公告)日：2022-08-30
申请号：US16086921
申请日：2017-08-22
Applicant: LG Chem, Ltd.
Inventor： Chan Yeup Chung , Ho Rim Lee , Kyoung Hoon Kim , Jung Min Ko
Abstract: A silicon-based molten composition according to an exemplary embodiment is used for a solution growth method for forming a silicon carbide single crystal, and represented by Formula 1 including silicon (Si), a first metal M1, a second metal M2 and a third metal M3, wherein the first metal M1 is one or more selected from the group consisting of nickel (Ni) and manganese (Mn), the second metal M2 is one or more selected from the group consisting of scandium (Sc) and titanium (Ti), and the third metal M3 is one or more selected from the group consisting of aluminum (Al) and gallium (Ga): SiaM1bM2cM3d Formula 1 wherein a is 0.3 to 0.8, b is 0.1 to 0.5, c is 0.01 to 0.3, d is 0.01 to 0.2, and a+b+c+d is 1.
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