公开(公告)号：US10734548B2

公开(公告)日：2020-08-04

申请号：US16059783

申请日：2018-08-09

Applicant: NGK INSULATORS, LTD.

Inventor： Katsuhiro Imai ,  Yoshitaka Kuraoka ,  Mikiya Ichimura ,  Takayuki Hirao

IPC: H01L33/32 ,  H01L33/18 ,  H01L33/06 ,  H01L31/0392 ,  H01L33/16 ,  H01L21/02 ,  C30B29/68 ,  C30B19/12 ,  C30B29/40 ,  H01L31/0304 ,  C30B19/02 ,  C30B9/12 ,  C30B25/18 ,  H01L29/04 ,  H01L29/165 ,  H01L29/20

Abstract: A free-standing substrate of a polycrystalline nitride of a group 13 element is composed of a plurality of monocrystalline particles having a particular crystal orientation in approximately a normal direction. The free-standing substrate has a top surface and a bottom surface. The polycrystalline nitride of the group 13 element is gallium nitride, aluminum nitride, indium nitride or a mixed crystal thereof and contains zinc at a concentration of 1×1017 atoms/cm3 or more and 1×1020 atoms/cm3 or less.

公开(公告)号：US09919931B2

公开(公告)日：2018-03-20

申请号：US14848842

申请日：2015-09-09

Applicant: NGK Insulators, Ltd.

Inventor： Jun Yoshikawa ,  Katsuhiro Imai ,  Koichi Kondo ,  Koki Kanno

IPC: C01G9/00 ,  C01G9/02 ,  C04B35/453 ,  C23C14/08 ,  C23C14/34

CPC classification number: C01G9/02 ,  C01P2002/90 ,  C01P2004/20 ,  C01P2004/54 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/10 ,  C01P2006/80 ,  C04B35/453 ,  C04B2235/322 ,  C04B2235/3284 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/77 ,  C04B2235/787 ,  C04B2235/788 ,  C23C14/086 ,  C23C14/3407 ,  C23C14/3414

Abstract: Provided is a zinc oxide-based sputtering target capable of improving the film formation rate while suppressing arcing in the formation of a zinc oxide-based transparent conductive film by sputtering. This zinc oxide-based sputtering target includes a zinc oxide-based sintered body mainly including zinc oxide crystal grains, and has a degree of (002) orientation of 50% or greater at a sputtering surface and a density of 5.30 g/cm3 or greater.

公开(公告)号：US20170211797A1

公开(公告)日：2017-07-27

申请号：US15413992

申请日：2017-01-24

Applicant: NGK INSULATORS, LTD.

Inventor： Masahiko Namerikawa ,  Takashi Yoshino ,  Katsuhiro Imai ,  Yoshitaka Kuraoka

IPC: F21V29/70 ,  F21V29/85 ,  F21V29/503 ,  F21V19/00

CPC classification number: F21V29/70 ,  F21V19/0015 ,  F21V29/503 ,  F21V29/85 ,  H01L33/642 ,  H01S5/02276 ,  H01S5/02469 ,  H01S5/02476 ,  H01S5/32341

Abstract: It is provided a heat discharge structure for a light source device emitting a semiconductor laser. The structure fixes the light source device and discharges heat. The structure includes a film of a nitride of a group 13 element having a first main face, a second main face and an outer side end face. The structure further includes a portion for containing the light source device. The portion has a through hole opening at the first main face and the second main face, and a fixing face for fixing the light source device. The fixing face faces the through hole and contacts the light source device.

公开(公告)号：US09627568B2

公开(公告)日：2017-04-18

申请号：US14920224

申请日：2015-10-22

Applicant: NGK Insulators, Ltd.

Inventor： Mikiya Ichimura ,  Jun Yoshikawa ,  Katsuhiro Imai

IPC: H01L31/00 ,  H01L31/077 ,  H01L31/0368 ,  H01L31/0392 ,  H01L31/0749

CPC classification number: H01L31/077 ,  H01L31/0368 ,  H01L31/03923 ,  H01L31/0749 ,  Y02E10/541

Abstract: Disclosed is a photovoltaic device comprising a substrate composed of an oriented polycrystalline zinc oxide sintered body in a plate shape, a photovoltaic layer provided on the substrate, and an electrode provided on the photovoltaic layer. According to the present invention, a photovoltaic device having high photoelectric conversion efficiency can be inexpensively provided.

公开(公告)号：US20150303066A1

公开(公告)日：2015-10-22

申请号：US14754817

申请日：2015-06-30

Applicant: NGK INSULATORS, LTD.

Inventor： Shuhei Higashihara ,  Makoto Iwai ,  Katsuhiro Imai

IPC: H01L21/3065 ,  H01L21/304 ,  H01L21/66 ,  H01L29/20

CPC classification number: H01L33/0095 ,  C30B9/10 ,  C30B19/02 ,  C30B29/406 ,  C30B33/12 ,  H01L21/304 ,  H01L21/30621 ,  H01L21/3065 ,  H01L22/12 ,  H01L29/2003 ,  H01L33/32

Abstract: In a substrate having a gallium nitride layer, surface damage after surface treatment of the gallium nitride layer is reduced and quality of a functional device formed thereon is improved. A substrate 4 having at least a gallium nitride layer 4 is provided. A plasma etching system equipped with an inductively coupled plasma generating system is used and a fluorine-based gas is introduced at a standardized direct current bias potential of −10V/cm2 or higher to subject a surface 3a of the gallium nitride layer to dry etching treatment.

Abstract translation: 在具有氮化镓层的基板中，氮化镓层的表面处理后的表面损伤减小，其上形成的功能元件的品质提高。 提供至少具有氮化镓层4的基板4。 使用配备有电感耦合等离子体发生系统的等离子体蚀刻系统，以-10V / cm 2以上的标准化直流偏置电位引入氟系气体，使氮化镓层的表面3a进行干蚀刻处理 。

公开(公告)号：US20140026809A1

公开(公告)日：2014-01-30

申请号：US14028841

申请日：2013-09-17

Applicant: NGK INSULATORS, LTD.

Inventor： Makoto Iwai ,  Takanao Shimodaira ,  Shuhei Higashihara ,  Takayuki Hirao ,  Masahiro Sakai ,  Katsuhiro Imai

IPC: C30B29/40 ,  C30B9/12

CPC classification number: C30B29/403 ,  C30B9/12 ,  C30B29/406 ,  Y10T428/24355

Abstract: A seed crystal substrate 10 includes a supporting body 1, and a seed crystal film 3A formed on the supporting body 1 and composed of a single crystal of a nitride of a Group 13 metal element. The seed crystal film 3A includes main body parts 3a and thin parts 3b having a thickness smaller than that of the main body parts 3a. The main body parts 3a and thin part 3b are exposed to a surface of the seed crystal substrate 10. A nitride 15 of a Group 13 metal element is grown on the seed crystal film 3A by flux method.

Abstract translation: 种子晶体基板10包括支撑体1和形成在支撑体1上并由第13族金属元素的氮化物的单晶构成的晶种膜3A。 籽晶膜3A包括主体部分3a和厚度小于主体部分3a的厚度的薄壁部分3b。 主体部分3a和薄部分3b暴露于晶种衬底10的表面。第13族金属元素的氮化物15通过助熔法在籽晶膜3A上生长。

公开(公告)号：US20140014028A1

公开(公告)日：2014-01-16

申请号：US14032297

申请日：2013-09-20

Applicant: NGK INSULATORS, LTD.

Inventor： Katsuhiro Imai ,  Makoto Iwai ,  Takanao Shimodaira ,  Masahiro Sakai ,  Shuhei Higashihara ,  Takayuki Hirao

IPC: C30B9/12 ,  H01L31/18

CPC classification number: C30B9/12 ,  C30B19/02 ,  C30B19/12 ,  C30B29/406 ,  H01L31/1856

Abstract: A gallium nitride layer is produced using a seed crystal substrate by flux method. The seed crystal substrate 8A includes a supporting body 1, a plurality of seed crystal layers 4A each comprising gallium nitride single crystal and separated from one another, a low temperature buffer layer 2 provided between the seed crystal layers 4A and the supporting body and made of a nitride of a group III metal element, and an exposed layer 3 exposed to spaces between the adjacent seed crystal layers 4A and made of aluminum nitride single crystal or aluminum gallium nitride single crystal. The gallium nitride layer is grown on the seed crystal layers by flux method.

Abstract translation: 使用晶种基板通过助焊剂法制造氮化镓层。 晶种基板8A包括支撑体1，多个晶种层4A，每个晶种层4A包含氮化镓单晶并彼此分离;低温缓冲层2，设置在晶种层4A和支撑体之间，由 III族金属元素的氮化物和暴露于相邻晶种层4A之间的空间并由氮化铝单晶或氮化镓铝单晶制成的暴露层3。 通过助熔法在氮化镓层上生长氮化镓层。

公开(公告)号：US10332958B2

公开(公告)日：2019-06-25

申请号：US14925095

申请日：2015-10-28

Applicant: NGK Insulators, Ltd.

Inventor： Jun Yoshikawa ,  Mikiya Ichimura ,  Katsuhiro Imai

IPC: H01L29/06 ,  C04B35/111 ,  H01L29/20 ,  B32B9/04 ,  C04B35/453 ,  C04B37/00 ,  H03H9/02 ,  B32B9/00 ,  H01L29/16 ,  H01L41/08 ,  B32B7/12 ,  B32B5/02 ,  B32B5/18 ,  B32B15/04 ,  B32B15/20 ,  H01L41/312 ,  H01L41/313 ,  H01L33/00

Abstract: A supporting substrate for a composite substrate comprises a ceramic and has a polished surface for use in bonding. An orientation degree of the ceramic forming the supporting substrate at the polished surface is 50% or higher, and an aspect ratio of each crystal grain included in the supporting substrate is 5.0 or less.

公开(公告)号：US10156022B2

公开(公告)日：2018-12-18

申请号：US15046693

申请日：2016-02-18

Applicant: NGK INSULATORS, LTD.

Inventor： Takayuki Hirao ,  Shuhei Higashihara ,  Katsuhiro Imai

IPC: C30B19/02 ,  C30B9/10 ,  C30B19/10 ,  C30B29/40

Abstract: It is produced a crystal of a nitride of a group 13 element in a melt including the group 13 element and a flux including at least an alkali metal under atmosphere comprising a nitrogen-containing gas. An amount of carbon is made 0.005 to 0.018 atomic percent, provided that 100 atomic percent is assigned to a total amount of said flux, said group 13 element and carbon in said melt.

公开(公告)号：US09663871B2

公开(公告)日：2017-05-30

申请号：US13866185

申请日：2013-04-19

Applicant: NGK INSULATORS, LTD.

Inventor： Nobuyuki Kobayashi ,  Kazuki Maeda ,  Koichi Kondo ,  Tsutomu Nanataki ,  Katsuhiro Imai ,  Jun Yoshikawa

IPC: C30B1/02 ,  C30B1/04 ,  C23C4/12 ,  C23C24/04 ,  C30B1/00 ,  C30B29/40 ,  C23C4/123

CPC classification number: C30B1/04 ,  C23C4/12 ,  C23C4/123 ,  C23C24/04 ,  C30B1/00 ,  C30B29/406

Abstract: A crystal production method according to the present invention includes a film formation and crystallization step of spraying a raw material powder containing a raw material component to form a film containing the raw material component on a seed substrate containing a single crystal at a predetermined single crystallization temperature at which single crystallization of the raw material component occurs, and crystallizing the film containing the raw material while maintaining the single crystallization temperature. In the film formation and crystallization step, preferably, the single crystallization temperature is 900° C. or higher. Furthermore, in the film formation and crystallization step, preferably, the raw material powder and the seed substrate are each a nitride or an oxide.