- 专利标题： Seed crystal substrates, composite substrates and functional devices
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申请号： US14742798申请日： 2015-06-18
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公开(公告)号： US10032958B2公开(公告)日： 2018-07-24
- 发明人: Shuuhei Higashihara , Makoto Iwai
- 申请人： NGK INSULATORS, LTD.
- 申请人地址： JP Aichi-prefecture
- 专利权人： NGK INSULATORS, LTD.
- 当前专利权人： NGK INSULATORS, LTD.
- 当前专利权人地址： JP Aichi-prefecture
- 代理机构： Cermak Nakajima & McGowan LLP
- 代理商 Tomoko Nakajima
- 优先权： JP2012-278103 20121220
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L33/32 ; C30B19/12 ; H01L33/20 ; H01L21/02 ; C30B9/10 ; C30B19/02 ; C30B29/40 ; H01L33/16 ; H01L33/12
摘要：
A seed crystal substrate 8 includes a base body 1 and a plurality of rows of stripe-shaped seed crystal layers 3 formed on the base body 1. An upper face 3a of the seed crystal layer 3 is (11-22) plane, a groove 4 is formed between the adjacent seed crystal layers 3, and a longitudinal direction of the groove 4 is a direction in which a c-axis of a crystal forming the seed crystal layer is projected on the upper face. A nitride of a group 13 element is formed on the seed crystal substrate.
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