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公开(公告)号：US20240318348A1
公开(公告)日：2024-09-26
申请号：US18574213
申请日：2022-04-28
申请人： DISCO Corporation , Ioffe Institute
发明人： Ryuji Oshima , Kanji Iizuka , Fedor Shakhov , Alexander Vul
摘要： Provided are a method for producing a single crystal diamond capable of synthesizing a single crystal diamond having excellent durability at a low cost in a short time, and the single crystal diamond. The method for producing the single crystal diamond employs a high-temperature and high-pressure method, and the single crystal diamond is synthesized by exposing raw materials composed of amorphous carbon and a carbon compound to a pressure and a temperature in a thermodynamically stable region of the diamond in a carbon phase equilibrium diagram.
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公开(公告)号：US20240309554A1
公开(公告)日：2024-09-19
申请号：US18576900
申请日：2022-07-05
摘要： A single crystal CVD diamond component and a method of fabricating the single crystal CVD diamond component. The single crystal CVD diamond component comprises a surface, wherein at least a portion of the surface has been processed by chemical mechanical polishing, CMP, and a layer of quantum spin defects, said layer of quantum spin defects being disposed within 500 nm of the surface.
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公开(公告)号：US20240279842A1
公开(公告)日：2024-08-22
申请号：US18567210
申请日：2022-05-24
申请人： SHIN-ETSU CHEMICAL CO., LTD. , NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
CPC分类号： C30B29/04 , C01B32/26 , C30B25/08 , C30B25/105 , C30B25/183 , C01P2002/72
摘要： A method for manufacturing a diamond substrate, the method being a method for producing a (111) oriented diamond crystal on an underlying substrate by epitaxial growth using hydrogen-diluted methane as a main source gas by a microwave plasma CVD method, a direct current plasma CVD method, a hot-filament CVD method, or an arc discharge plasma jet CVD method, in which a growth rate is less than 3.8 μm/h. Thereby, a diamond crystal applicable to an electronic and magnetic device and a method to produce this crystal are stably provided in which the crystal with the NV axis with orientation and high-density NVC obtained by the CVD method under a predetermined condition is grown on a highly oriented (111) diamond base substrate obtained by the CVD method also under a predetermined condition.
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公开(公告)号：US12049711B2
公开(公告)日：2024-07-30
申请号：US16973706
申请日：2019-05-20
发明人： Koji Onomitsu , Kazuyuki Hirama
IPC分类号： C30B23/02 , C23C16/27 , C23C16/34 , C30B25/18 , C30B29/04 , C30B29/40 , C30B29/68 , C30B33/10
CPC分类号： C30B29/68 , C23C16/27 , C23C16/342 , C30B23/025 , C30B25/183 , C30B29/04 , C30B29/403 , C30B33/10
摘要： A material composed of an element having no catalytic action is epitaxially grown on a nickel layer to form a material layer. For example, iridium is epitaxially grown to form the material layer. Next, a cubic crystal is epitaxially grown on the material layer to form a crystal layer, and a laminate structure including the material layer and the crystal layer is patterned to form a vibrator shape part. The thickness of the material layer is controlled within a range in which lattice relaxation is not complete.
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公开(公告)号：US20240229295A1
公开(公告)日：2024-07-11
申请号：US18283790
申请日：2022-03-30
发明人： Yikang ZUO , Jin Hwa LEE , Yoshiki NISHIBAYASHI , Yutaka KOBAYASHI , Minori TERAMOTO , Hitoshi SUMIYA
摘要： A single-crystal diamond having an X-ray diffraction rocking curve with a half-width of 20 seconds or less, a peak at a Raman shift in the range of 1332 cm−1 to 1333 cm−1 in a Raman spectrum has a half-width of 2.0 cm−1 or less, the single-crystal diamond has an etch-pit density of 10,000/cm2 or less, the single-crystal diamond has a nitrogen content in the range of 0.0001 ppm to 0.1 ppm based on the number of atoms, and the single-crystal diamond has a 13C content of less than 0.01% based on the number of atoms.
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公开(公告)号：US20240183067A1
公开(公告)日：2024-06-06
申请号：US18192811
申请日：2023-03-30
发明人： Xiaolei Wu , Ning Yan , Shuai Xu , Yanjun Zhao , Junyong Shao , Wentao Zhou , Jiong Zhao , Bolun Cao , Hui Liu , Hongxing Pan
摘要： MPCVD device comprises deposition platform, substrate platform, lifting platform, microwave quartz window, upper cover plate, baseplate, pressure sensors, composite windows, thickness measuring device, visual device, temperature measuring device, plasma diagnostic device, vacuum sealing ring and microwave shielding sealing ring. Reaction cavity is formed by upper cover plate and baseplate, and inlet hole is arranged on top of upper cover plate, while exhaust hole is arranged on baseplate; microwave quartz window is annular shaped and arranged between deposition platform and baseplate, and reaction cavity is isolated from air outside by microwave quartz window; lifting platform is provided with vacuum channel and cooling channel therein; vacuum cavity, which is communicated with vacuum channel, is formed by lower surface of substrate platform and upper surface of lifting platform; and pressure sensor for monitoring gas pressure is arranged in vacuum cavity.
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公开(公告)号：US11986905B2
公开(公告)日：2024-05-21
申请号：US17263650
申请日：2018-08-01
申请人： KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION , KYUSHU INSTITUTE OF TECHNOLOGY , OSG CORPORATION
IPC分类号： C30B29/00 , B23K26/00 , B23K26/03 , B23K26/352 , B23K33/00 , C30B29/04 , C30B33/00 , C30B33/04 , B23K103/00
CPC分类号： B23K26/3576 , B23K26/0006 , B23K26/03 , C30B29/04 , C30B33/04 , B23K2103/50
摘要： A diamond smoothing method of irradiating a laser light onto a raised and recessed surface of a diamond, so as to smooth the raised and recessed surface, by ablation that is caused to occur in the diamond by irradiation of the laser light onto the raised and recessed surface. The method includes: a threshold-energy-density detecting step of irradiating the laser light onto the raised and recessed surface, and changing an irradiation energy density of the laser light, so as to detect a threshold energy density as a lower threshold value of the irradiation energy density that causes the ablation to occur; and a smoothing processing step of executing a smoothing processing by irradiating the laser light onto the raised and recessed surface with a smoothing irradiation energy density that is set to be within a range from 1 to 15 times as large as the threshold energy density.
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8.发明公开公开(公告)号：US20240052522A1
公开(公告)日：2024-02-15
申请号：US18258890
申请日：2021-12-23
申请人： ORBRAY CO., LTD.
发明人： Seongwoo KIM , Koji KOYAMA
摘要： Provided are a substrate for epitaxially growing a diamond crystal, having at least a surface made of a metal, in which the above surface made of the metal is a plane having an off angle φ of more than 0°, and the full width at half maximum of the X-ray diffraction peak from the (002) plane by the X-ray rocking curve measurement at the above surface made of the metal is 300 seconds or less; and a method of manufacturing a diamond crystal, including epitaxially growing a diamond crystal on the above surface made of the metal of the above substrate.
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公开(公告)号：US20230392283A1
公开(公告)日：2023-12-07
申请号：US18453559
申请日：2023-08-22
申请人： Plasmability, LLC
发明人： Robert J. Basnett , Andrew Francis Basnett , Amanda Charris-Hernandez , William Holber , Travis Charles Wade , Adam James Brown
CPC分类号： C30B29/04 , C30B25/105 , C30B25/12 , C30B25/16
摘要： A method of growing single crystal diamond assisted by polycrystalline diamond growth to enhance dimensions and quality of the single crystal diamond includes thermally mating a diamond seed on a top surface of a substrate holder providing a growth surface for a combination of single crystal diamond and polycrystalline diamond. A predetermined temperature difference between the diamond seed and the substrate holder during processing along with the plasma process conditions causes a single crystal diamond growth rate to be different from a polycrystalline growth rate by a predetermined amount. Process gasses are introduced, and a plasma is formed to grow both single crystal diamond and polycrystalline diamond on the growth surface so that the polycrystalline diamond grown adjacent to the single crystal diamond shields side surfaces of the growing single crystal diamond, thereby improving growth quality across the growing single crystal diamond.
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公开(公告)号：US20230272551A1
公开(公告)日：2023-08-31
申请号：US18143557
申请日：2023-05-04
CPC分类号： C30B25/205 , C30B25/105 , C30B25/16 , C30B29/04
摘要： A method of manufacturing synthetic diamond material using a chemical vapour deposition process, and a diamond obtained by such a method are described. The method comprises providing a freestanding synthetic single crystal diamond substrate wafer having a dislocation density of at least 107cm−2. The synthetic single crystal diamond substrate wafer is located over a substrate holder within a chemical vapour deposition reactor. Process gases are fed into the reactor, the process gases including a gas comprising carbon. Crack-free synthetic diamond material is grown on a surface of the single crystal diamond substrate wafer at a temperature of at least 900° C. to a thickness of at least 0.5 mm and with lateral dimensions of at least 4 mm by 4 mm.
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