公开(公告)号：US20210285125A1

公开(公告)日：2021-09-16

申请号：US17258080

申请日：2019-07-05

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： IAN FRIEL ,  KATHARINE LOUISE ATKINSON ,  DANIEL JAMES TWITCHEN

IPC: C30B25/20 ,  C30B25/10 ,  C30B25/16 ,  C30B29/04

Abstract: A method of manufacturing synthetic diamond material using a chemical vapour deposition process, and a diamond obtained by such a method are described. The method comprises providing a freestanding synthetic single crystal diamond substrate wafer having a dislocation density of at least 107 cm−2. The synthetic single crystal diamond substrate wafer is located over a substrate holder within a chemical vapour deposition reactor. Process gases are fed into the reactor, the process gases including a gas comprising carbon. Crack-free synthetic diamond material is grown on a surface of the single crystal diamond substrate wafer at a temperature of at least 900° C. to a thickness of at least 0.5 mm and with lateral dimensions of at least 4 mm by 4 mm.

公开(公告)号：US20230272551A1

公开(公告)日：2023-08-31

申请号：US18143557

申请日：2023-05-04

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： IAN FRIEL ,  KATHARINE LOUISE ATKINSON ,  DANIEL JAMES TWITCHEN

IPC: C30B25/20 ,  C30B25/10 ,  C30B25/16 ,  C30B29/04

CPC classification number: C30B25/205 ,  C30B25/105 ,  C30B25/16 ,  C30B29/04

Abstract: A method of manufacturing synthetic diamond material using a chemical vapour deposition process, and a diamond obtained by such a method are described. The method comprises providing a freestanding synthetic single crystal diamond substrate wafer having a dislocation density of at least 107cm−2. The synthetic single crystal diamond substrate wafer is located over a substrate holder within a chemical vapour deposition reactor. Process gases are fed into the reactor, the process gases including a gas comprising carbon. Crack-free synthetic diamond material is grown on a surface of the single crystal diamond substrate wafer at a temperature of at least 900° C. to a thickness of at least 0.5 mm and with lateral dimensions of at least 4 mm by 4 mm.

公开(公告)号：US20210395916A1

公开(公告)日：2021-12-23

申请号：US17408166

申请日：2021-08-20

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： RIZWAN KHAN ,  STEVEN COE ,  JONATHAN WILMAN (DECEASED) ,  DANIEL TWITCHEN ,  GEOFFREY SCARSBROOK ,  JOHN BRANDON ,  CHRISTOPHER WORT ,  MATTHEW MARKHAM ,  IAN FRIEL ,  KATHARINE ROBERTSON

IPC: C30B25/10 ,  C23C16/27 ,  C30B29/04 ,  C23C16/511

Abstract: A method of fabricating synthetic diamond material using a microwave plasma activated chemical vapour deposition technique is provided which utilizes high and uniform microwave power densities applied over large areas and for extended periods of time. Products fabricated using such a synthesis technique are described including a single crystal CVD diamond layer which has a large area and a low nitrogen concentration, and a high purity, fast growth rate single crystal CVD diamond material.

公开(公告)号：US20170040145A1

公开(公告)日：2017-02-09

申请号：US15304366

申请日：2015-06-10

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： JOHN ROBERT BRANDON ,  IAN FRIEL ,  MICHAEL ANDREW COOPER ,  GEOFFREY ALAN SCARSBROOK ,  BEN LLEWLYN GREEN

IPC: H01J37/32 ,  C23C16/511 ,  C30B29/04 ,  C30B25/10 ,  C30B25/20 ,  C23C16/27 ,  C23C16/458

CPC classification number: H01J37/32201 ,  C23C16/274 ,  C23C16/458 ,  C23C16/511 ,  C30B25/105 ,  C30B25/205 ,  C30B29/04 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32247 ,  H01J37/32284 ,  H01J37/32293 ,  H01J37/32302 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber defining a resonant cavity for supporting a primary microwave resonance mode having a primary microwave resonance mode frequency f; a plurality of microwave sources coupled to the plasma chamber for generating and feeding microwaves having a total microwave power Pτ into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use, wherein the plurality of microwave sources are configured to couple at least 30% of the total microwave power Pτ into the plasma chamber in the primary microwave resonance mode frequency f, and wherein at least some of the plurality of microwave sources are solid state microwave sources.

Abstract translation: 一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：等离子体室，其限定用于支撑具有初级微波谐振模式频率f的初级微波谐振模式的谐振腔; 耦合到等离子体室的多个微波源，用于产生并馈送具有总微波功率Pτ的微波进入等离子体室; 用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 以及衬底保持器，其设置在所述等离子体室中并且包括用于支撑在其上沉积所述合成金刚石材料的衬底的支撑表面，其中所述多个微波源被配置为耦合所述总微波功率的至少30％ Pτ以初级微波共振模式频率f进入等离子体室，并且其中多个微波源中的至少一些是固态微波源。

公开(公告)号：US20170009376A1

公开(公告)日：2017-01-12

申请号：US15036692

申请日：2014-11-18

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： RIZWAN KHAN ,  STEVEN COE ,  JONATHAN WILMAN ,  DANIEL TWITCHEN ,  GEOFFREY SCARSBROOK ,  JOHN BRANDON ,  CHRISTOPHER WORT ,  MATTHEW MARKHAM ,  IAN FRIEL ,  KATHARINE ROBERTSON

IPC: C30B25/10 ,  C23C16/511 ,  C30B29/04 ,  C23C16/27

CPC classification number: C30B25/105 ,  C23C16/274 ,  C23C16/511 ,  C30B29/04

Abstract: A method of fabricating synthetic diamond material using a microwave plasma activated chemical vapour deposition technique is provided which utilizes high and uniform microwave power densities applied over large areas and for extended periods of time. Products fabricated using such a synthesis technique are described including a single crystal CVD diamond layer which has a large area and a low nitrogen concentration, and a high purity, fast growth rate single crystal CVD diamond material.

Abstract translation: 提供了使用微波等离子体激活化学气相沉积技术制造合成金刚石材料的方法，其利用在大面积上并且延长的时间段施加的高且均匀的微波功率密度。 描述了使用这种合成技术制造的产品，其包括具有大面积和低氮浓度的单晶CVD金刚石层以及高纯度，快速生长速率的单晶CVD金刚石材料。