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    SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL VIA CHEMICAL VAPOUR DEPOSITION
    1.
    发明申请
    SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL VIA CHEMICAL VAPOUR DEPOSITION 有权

    公开(公告)号：US20210115590A1

    公开(公告)日：2021-04-22

    申请号：US16464351

    申请日：2017-11-30

    Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

    Inventor： DANIEL JAMES TWITCHEN ,  HARPREET KAUR DHILLON ,  RIZWAN UDDIN AHMAD KHAN

    IPC: C30B29/04 ,  C30B25/18 ,  C30B25/20 ,  C30B33/04 ,  C30B33/12

    Abstract: There is described a single crystal CVD diamond material comprising three orthogonal dimensions of at least 2 mm; one or more regions of low optical birefringence, indicative of low strain, such that in a sample of the single crystal CVD diamond material having a thickness in a range 0.5 mm to 1.0 mm and an area of greater than 1.3 mm×1.3 mm and measured using a pixel size of area in a range 1×1 μm2 to 20×20 μm2, a maximum value of Δn[average] does not exceed 1.5×10−4 for the one or more regions of low optical birefringence, where Δn[average] is an average value of a difference between refractive index for light polarised parallel to slow and fast axes averaged over the sample thickness; one or more regions of high optical birefringence, indicative of high strain, such that in said sample of the single crystal CVD diamond material and measured using said pixel size, Δn[average] is greater than 1.5×10−4 and less than 3×10−3; and is wherein every 1.3 mm×1.3 mm area of the sample of the single crystal CVD diamond material comprises at least one of said regions of high optical birefringence. There is also described a method of making the CVD diamond material.

    METHOD OF FABRICATING A PLURALITY OF SINGLE CRYSTAL CVD SYNTHETIC DIAMONDS
    2.
    发明申请
    METHOD OF FABRICATING A PLURALITY OF SINGLE CRYSTAL CVD SYNTHETIC DIAMONDS 审中-公开

    公开(公告)号：US20180266013A1

    公开(公告)日：2018-09-20

    申请号：US15762486

    申请日：2016-09-14

    Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

    Inventor： CHRISTOPHER JOHN HOWARD WORT ,  DANIEL JAMES TWITCHEN ,  JOHN LLOYD COLLINS

    IPC: C30B25/20 ,  C30B25/18 ,  C30B29/04 ,  C23C16/27

    Abstract: A method of fabricating a plurality of single crystal CVD diamonds, the method comprising: coating a carrier substrate with a layer of polycrystalline CVD diamond material; bonding a plurality of single crystal diamond substrates to the layer of polycrystalline CVD diamond material on the carrier substrate; growing single crystal CVD diamond material on the plurality of single crystal diamond substrates to form a plurality of single crystal CVD diamonds; and separating the plurality of single crystal CVD diamonds from the layer of polycrystalline CVD diamond material on the carrier substrate and any polycrystalline CVD diamond material which has grown between the plurality of single crystal CVD diamonds to yield a plurality of individual single crystal CVD diamonds.

    SINGLE CRYSTAL DIAMOND
    3.
    发明申请
    SINGLE CRYSTAL DIAMOND 有权
    单晶水钻

    公开(公告)号：US20170037539A1

    公开(公告)日：2017-02-09

    申请号：US15298380

    申请日：2016-10-20

    Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

    Inventor： GEOFFREY ALAN SCARSBROOK ,  PHILIP MAURICE MARTINEAU ,  DANIEL JAMES TWITCHEN

    IPC: C30B29/04 ,  C30B25/20

    CPC classification number: C30B29/04 ,  C30B25/02 ,  C30B25/20 ,  C30B33/00

    Abstract: A method of producing a large area plate of single crystal diamond from CVD diamond grown on a substrate substantially free of surface defects by chemical vapour deposition (CVD). The homoepitaxial CVD grown diamond and the substrate are severed transverse to the surface of the substrate on which diamond growth took place to produce the large area plate of single crystal CVD diamond.

    Abstract translation: 从通过化学气相沉积（CVD）基本上没有表面缺陷的基板上生长的CVD金刚石生产大面积单晶金刚石的方法。 同质外延CVD生长的金刚石和基底横切于衬底的表面，在其上发生金刚石生长以产生大面积单晶CVD金刚石板。

    METHOD OF MANUFACTURE OF SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL
    4.
    发明申请
    METHOD OF MANUFACTURE OF SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL 有权

    公开(公告)号：US20210285125A1

    公开(公告)日：2021-09-16

    申请号：US17258080

    申请日：2019-07-05

    Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

    Inventor： IAN FRIEL ,  KATHARINE LOUISE ATKINSON ,  DANIEL JAMES TWITCHEN

    IPC: C30B25/20 ,  C30B25/10 ,  C30B25/16 ,  C30B29/04

    Abstract: A method of manufacturing synthetic diamond material using a chemical vapour deposition process, and a diamond obtained by such a method are described. The method comprises providing a freestanding synthetic single crystal diamond substrate wafer having a dislocation density of at least 107 cm−2. The synthetic single crystal diamond substrate wafer is located over a substrate holder within a chemical vapour deposition reactor. Process gases are fed into the reactor, the process gases including a gas comprising carbon. Crack-free synthetic diamond material is grown on a surface of the single crystal diamond substrate wafer at a temperature of at least 900° C. to a thickness of at least 0.5 mm and with lateral dimensions of at least 4 mm by 4 mm.

    SYNTHETIC DIAMOND HEAT SPREADERS
    8.
    发明申请
    SYNTHETIC DIAMOND HEAT SPREADERS 审中-公开

    公开(公告)号：US20190139857A1

    公开(公告)日：2019-05-09

    申请号：US16308376

    申请日：2017-06-08

    Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

    Inventor： DANIEL JAMES TWITCHEN

    IPC: H01L23/373 ,  C23C16/27

    Abstract: A synthetic diamond heat spreader that includes a first layer of synthetic diamond material forming a base support layer and a second layer of synthetic diamond material disposed on the first layer of synthetic diamond material and forming a diamond surface layer. The diamond surface layer has a thickness equal to or less than a thickness of the base support layer. The diamond surface layer has a nitrogen content less than that of the base support layer. The nitrogen content of the diamond surface layer and the diamond support layer is selected such that the thermal conductivity of the base support layer is in a range 1000 W/mK to 1800 W/mK and the thermal conductivity of the surface support layer is in a range 1900 W/mK to 2800 W/mK.

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