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公开(公告)号:US20190211473A1
公开(公告)日:2019-07-11
申请号:US16352934
申请日:2019-03-14
发明人: DANIEL JAMES TWITCHEN , ANDREW MICHAEL BENNETT , RIZWAN UDDIN AHMAD KHAN , PHILIP MAURICE MARTINEAU
CPC分类号: C30B29/04 , C01B32/25 , C30B25/165 , C30B25/186 , C30B25/20
摘要: The present disclosure relates to methods for synthesizing synthetic CVD diamond material and high quality synthetic CVD diamond materials.
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公开(公告)号:US20200087782A1
公开(公告)日:2020-03-19
申请号:US16345946
申请日:2017-11-08
摘要: A method of fabricating a plurality of single crystal CVD diamonds. The method includes mounting a plurality of single crystal diamond substrates on a first carrier substrate. The plurality of single crystal diamond substrates is subjected to a first CVD diamond growth process to form a plurality of single crystal CVD diamonds on the plurality of single crystal diamond substrates. The plurality of single crystal CVD diamonds are mounted in a recessed carrier substrate and subjected to a second CVD diamond growth process.
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公开(公告)号:US20190003043A1
公开(公告)日:2019-01-03
申请号:US16064337
申请日:2016-11-25
IPC分类号: C23C16/27
摘要: A poly crystalline chemical vapour deposited (CVD) diamond wafer comprising: —a diameter >40 mm; —a thickness >1.0 mm; —an absorption coefficient ≤0.1 cm−1 at 10.6 μm; and ⋅a micro feature density, especially in the form of “black spots”, meeting the following specification: —in a central area of the polycrystalline CVD diamond wafer from 0 to 20 mm radius there are no more than 100 micro features of a size between 0.002 and 0.008 mm2, no more than 50 micro features of a size between 0.008 and 0.018 mm2, no more than 25 microfeatures of a size between 0.018 and 0.05 mm2, and zero microfeatures of a size between 0.05 and 0.1 mm2, and ⋅in an outer region of the polycrystalline CVD diamond wafer from 20 to 40 mm radius there are no more than 200 microfeatures 2 of a size between 0.002 and 0.008 mm2, no more than 150 microfeatures of a size between 0.008 and 0.018 mm2, no more than 100 microfeatures of a size between 0.018 and 0.05 mm2, and zero microfeatures of a size between 0.05 and 0.1 mm2.
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公开(公告)号:US20170306524A1
公开(公告)日:2017-10-26
申请号:US15507539
申请日:2015-11-02
IPC分类号: C30B25/20 , C30B33/02 , C30B29/04 , C23C16/27 , B23K26/38 , B23K15/08 , B23K15/00 , B23K26/402 , C30B33/04 , B23K26/146 , B23K103/00
CPC分类号: C30B25/20 , B23K15/0006 , B23K15/08 , B23K26/146 , B23K26/38 , B23K26/402 , B23K2103/50 , B28D1/221 , C23C16/27 , C30B29/04 , C30B33/02 , C30B33/04 , C30B33/06
摘要: A method of fabricating plates of super-hard material and cutting techniques suitable for such a method. A method of fabricating a plate (14) of super-hard material, the method comprising: • providing a substrate (4) have a lateral dimension of at least 40 mm; • growing a layer of super-hard material on the substrate (4) using a chemical vapour deposition process; and • slicing one or more plates (14) of super-hard material from the substrate using a collimated cutting beam (8), the or each plate of super-hard material (14) having a lateral dimension of at least 40 mm, wherein the collimated cutting beam (8) is collimated with a half angle divergence of no more than 5 degrees.
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