SINGLE CRYSTAL DIAMOND
    1.
    发明申请
    SINGLE CRYSTAL DIAMOND 有权
    单晶水钻

    公开(公告)号:US20170037539A1

    公开(公告)日:2017-02-09

    申请号:US15298380

    申请日:2016-10-20

    IPC分类号: C30B29/04 C30B25/20

    摘要: A method of producing a large area plate of single crystal diamond from CVD diamond grown on a substrate substantially free of surface defects by chemical vapour deposition (CVD). The homoepitaxial CVD grown diamond and the substrate are severed transverse to the surface of the substrate on which diamond growth took place to produce the large area plate of single crystal CVD diamond.

    摘要翻译: 从通过化学气相沉积(CVD)基本上没有表面缺陷的基板上生长的CVD金刚石生产大面积单晶金刚石的方法。 同质外延CVD生长的金刚石和基底横切于衬底的表面,在其上发生金刚石生长以产生大面积单晶CVD金刚石板。