SINGLE CRYSTAL DIAMOND
    2.
    发明申请
    SINGLE CRYSTAL DIAMOND 有权
    单晶水钻

    公开(公告)号:US20170037539A1

    公开(公告)日:2017-02-09

    申请号:US15298380

    申请日:2016-10-20

    CPC classification number: C30B29/04 C30B25/02 C30B25/20 C30B33/00

    Abstract: A method of producing a large area plate of single crystal diamond from CVD diamond grown on a substrate substantially free of surface defects by chemical vapour deposition (CVD). The homoepitaxial CVD grown diamond and the substrate are severed transverse to the surface of the substrate on which diamond growth took place to produce the large area plate of single crystal CVD diamond.

    Abstract translation: 从通过化学气相沉积(CVD)基本上没有表面缺陷的基板上生长的CVD金刚石生产大面积单晶金刚石的方法。 同质外延CVD生长的金刚石和基底横切于衬底的表面,在其上发生金刚石生长以产生大面积单晶CVD金刚石板。

    A MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL
    3.
    发明申请
    A MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL 审中-公开
    用于制造合成金刚石材料的微波等离子体反应器

    公开(公告)号:US20170040145A1

    公开(公告)日:2017-02-09

    申请号:US15304366

    申请日:2015-06-10

    Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber defining a resonant cavity for supporting a primary microwave resonance mode having a primary microwave resonance mode frequency f; a plurality of microwave sources coupled to the plasma chamber for generating and feeding microwaves having a total microwave power Pτ into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use, wherein the plurality of microwave sources are configured to couple at least 30% of the total microwave power Pτ into the plasma chamber in the primary microwave resonance mode frequency f, and wherein at least some of the plurality of microwave sources are solid state microwave sources.

    Abstract translation: 一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器,所述微波等离子体反应器包括:等离子体室,其限定用于支撑具有初级微波谐振模式频率f的初级微波谐振模式的谐振腔; 耦合到等离子体室的多个微波源,用于产生并馈送具有总微波功率Pτ的微波进入等离子体室; 用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 以及衬底保持器,其设置在所述等离子体室中并且包括用于支撑在其上沉积所述合成金刚石材料的衬底的支撑表面,其中所述多个微波源被配置为耦合所述总微波功率的至少30% Pτ以初级微波共振模式频率f进入等离子体室,并且其中多个微波源中的至少一些是固态微波源。

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