公开(公告)号：US20210285125A1

公开(公告)日：2021-09-16

申请号：US17258080

申请日：2019-07-05

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： IAN FRIEL ,  KATHARINE LOUISE ATKINSON ,  DANIEL JAMES TWITCHEN

IPC: C30B25/20 ,  C30B25/10 ,  C30B25/16 ,  C30B29/04

Abstract: A method of manufacturing synthetic diamond material using a chemical vapour deposition process, and a diamond obtained by such a method are described. The method comprises providing a freestanding synthetic single crystal diamond substrate wafer having a dislocation density of at least 107 cm−2. The synthetic single crystal diamond substrate wafer is located over a substrate holder within a chemical vapour deposition reactor. Process gases are fed into the reactor, the process gases including a gas comprising carbon. Crack-free synthetic diamond material is grown on a surface of the single crystal diamond substrate wafer at a temperature of at least 900° C. to a thickness of at least 0.5 mm and with lateral dimensions of at least 4 mm by 4 mm.

公开(公告)号：US20230272551A1

公开(公告)日：2023-08-31

申请号：US18143557

申请日：2023-05-04

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： IAN FRIEL ,  KATHARINE LOUISE ATKINSON ,  DANIEL JAMES TWITCHEN

IPC: C30B25/20 ,  C30B25/10 ,  C30B25/16 ,  C30B29/04

CPC classification number: C30B25/205 ,  C30B25/105 ,  C30B25/16 ,  C30B29/04

Abstract: A method of manufacturing synthetic diamond material using a chemical vapour deposition process, and a diamond obtained by such a method are described. The method comprises providing a freestanding synthetic single crystal diamond substrate wafer having a dislocation density of at least 107cm−2. The synthetic single crystal diamond substrate wafer is located over a substrate holder within a chemical vapour deposition reactor. Process gases are fed into the reactor, the process gases including a gas comprising carbon. Crack-free synthetic diamond material is grown on a surface of the single crystal diamond substrate wafer at a temperature of at least 900° C. to a thickness of at least 0.5 mm and with lateral dimensions of at least 4 mm by 4 mm.