公开(公告)号：US09260794B2

公开(公告)日：2016-02-16

申请号：US14266229

申请日：2014-04-30

Applicant: CTG ADVANCED MATERIALS, LLC

Inventor： Pengdi Han ,  Jian Tian

IPC: C30B11/00 ,  C30B9/00 ,  C30B17/00 ,  C30B21/02 ,  C30B28/06 ,  C30B11/08 ,  C30B35/00 ,  C30B11/02 ,  C30B11/14 ,  C30B29/32

CPC classification number: C30B11/006 ,  C30B11/001 ,  C30B11/002 ,  C30B11/003 ,  C30B11/007 ,  C30B11/02 ,  C30B11/04 ,  C30B11/08 ,  C30B11/14 ,  C30B29/30 ,  C30B29/32 ,  C30B35/00 ,  H01L41/1875 ,  Y10T117/10 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1092

Abstract: This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).

公开(公告)号：US10381544B2

公开(公告)日：2019-08-13

申请号：US15308819

申请日：2015-05-06

Applicant: CTG Advanced Materials, LLC

Inventor： Pengdi Han ,  Jian Tian ,  Stephen Dynan ,  Brandon Stone

IPC: C30B11/00 ,  C30B11/08 ,  C30B29/22 ,  C30B35/00 ,  H01L41/18 ,  H01L41/083 ,  H01L41/277

Abstract: A system and method provides a piezoelectric stack arrangement for reduced driving voltage while maintaining a driving level for active piezoelectric materials. A stack arrangement of d36 shear mode single crystals of both air X-cut and Y-cut ±1:45° (±20°) arrangement are bonded with discrete conductive pillars to form a shear crystal stack. The bonding area between the neighboring crystal parts is minimized. The bonding pillars are positioned at less than a total surface are of the single crystal forming the stack. The stack fabrication is facilitated with a precision assembly system, where crystal parts are placed to desired locations on an assembly fixture for alignment following the preset operation steps. With the reduced clamping effect from bonding due to lower surface coverage of the discrete conductive pillars, such a piezoelectric d36 shear crystal stack exhibits a reduced driving voltage while maintaining a driving level and substantial and surprisingly improved performance.

公开(公告)号：US20190085482A1

公开(公告)日：2019-03-21

申请号：US15736467

申请日：2017-05-31

Applicant: Crystal Systems Corporation

Inventor： Isamu Shindo

IPC: C30B35/00 ,  C30B11/08 ,  C30B11/00 ,  C30B29/06

Abstract: Produced is a large single crystal with no crystal grain boundary, which is a high-quality single crystal that has a uniform composition in both the vertical and horizontal directions at an optimum dopant concentration and contains only a small number of negative crystals and exsolution lamellae. A single-crystal production equipment includes at least: a quartz crucible in which a seed crystal is placed on its bottom; a powder raw material supply apparatus which supplies a powder raw material into the quartz crucible; and an infrared ray irradiation apparatus which applies an infrared ray to the powder raw material supplied into the quartz crucible from the powder raw material supply apparatus.

公开(公告)号：US09951439B2

公开(公告)日：2018-04-24

申请号：US14559362

申请日：2014-12-03

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Naofumi Shinya ,  Yu Hamaguchi ,  Norio Yamagata ,  Takehisa Minowa

IPC: C30B13/02 ,  C30B17/00 ,  C30B29/36 ,  C30B13/14 ,  C30B15/02 ,  C30B15/20 ,  C30B11/08 ,  C30B15/10 ,  C30B19/04 ,  C30B9/10

CPC classification number: C30B13/02 ,  C30B9/10 ,  C30B11/08 ,  C30B13/14 ,  C30B15/02 ,  C30B15/10 ,  C30B15/206 ,  C30B17/00 ,  C30B19/04 ,  C30B29/36

Abstract: In the present invention, a crucible formed of SiC as a main component is used as a container for a Si—C solution. A metal element M (M is at least one metal element selected from at least one of a first group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho and Lu, a second group consisting of Ti, V, Cr, Mn, Fe, Co, Ni and Cu and a third group consisting of Al, Ga, Ge, Sn, Pb and Zn) is added to the Si—C solution and the crucible is heated to elute Si and C, which are derived from a main component SiC of the crucible, from a high-temperature surface region of the crucible in contact with the Si—C solution, into the Si—C solution. In this way, precipitation of a SiC polycrystal on a surface of the crucible in contact with the Si—C solution is suppressed.

公开(公告)号：US20130206056A1

公开(公告)日：2013-08-15

申请号：US13640121

申请日：2011-04-11

Applicant: Uwe Kerat ,  Christian Schmid ,  Jochem Hahn

Inventor： Uwe Kerat ,  Christian Schmid ,  Jochem Hahn

IPC: C30B11/02 ,  C30B15/02 ,  C30B11/00 ,  C30B11/08

CPC classification number: C30B11/02 ,  C01B33/02 ,  C30B11/001 ,  C30B11/007 ,  C30B11/08 ,  C30B13/00 ,  C30B15/00 ,  C30B15/02 ,  C30B29/06

Abstract: A method of producing a crystalline semiconductor material includes feeding particles of the semiconductor material and/or a precursor compound of the semiconductor material into a gas flow, wherein the gas flow has a sufficiently high temperature to convert the particles of the semiconductor material from a solid into a liquid and/or gaseous state and/or to thermally decompose the precursor compound, condensing out and/or separating the liquid semiconductor material from the gas flow, and converting the liquid semiconductor material to a solid state with formation of mono- or polycrystalline crystal properties.

Abstract translation: 制造结晶半导体材料的方法包括将半导体材料的颗粒和/或半导体材料的前体化合物进料到气流中，其中气流具有足够高的温度以将半导体材料的颗粒从固体 进入液态和/或气态和/或热分解前体化合物，将液体半导体材料与气流冷凝出和/或分离，并将液体半导体材料转化为固态，形成单晶或多晶 晶体性质。

公开(公告)号：US20110174214A1

公开(公告)日：2011-07-21

申请号：US13002565

申请日：2009-11-20

Applicant: Yukichi Horioka

Inventor： Yukichi Horioka

IPC: C30B15/10 ,  C30B11/08

CPC classification number: C30B15/02 ,  C30B29/06 ,  Y10T117/1032 ,  Y10T117/1092

Abstract: To provide a crystal growing apparatus and a crystal growing method capable of enabling use of a quartz crucible for a longer period of time and improving operation rate.A crystal growing apparatus according to the invention includes a crystal growing furnace equipped with a quartz crucible, a raw material melting furnace, and a supply unit for repeatedly supplying a molten raw material from the raw material melting furnace to the quartz crucible. The crystal growing furnace may include a supply port for allowing supply of the molten raw material therethrough, and the supply port may be configured to be movable close to or away from the raw material melting furnace. A plurality of the crystal growing furnaces may be disposed around the raw material melting furnace. The raw material melting furnace may include an insoluble material separating unit. A crystal growing method according to the invention includes supplying a molten raw material melted in advance to a quartz crucible. In the crystal growing method of the invention, an insoluble material can be removed from the molten raw material before the supplying.

Abstract translation: 提供一种可以使石英坩埚长时间使用并提高运转率的晶体生长装置和晶体生长方法。 根据本发明的晶体生长装置包括装配有石英坩埚，原料熔化炉和供应单元的晶体生长炉，用于将熔融原料从原料熔化炉反复供应到石英坩埚。 晶体生长炉可以包括用于允许熔融原料供应的供给口，供给口可以构造成能够靠近或远离原料熔化炉移动。 多个晶体生长炉可以设置在原料熔化炉周围。 原料熔化炉可以包括不溶物分离装置。 根据本发明的晶体生长方法包括将预先熔化的熔融原料供应到石英坩埚中。 在本发明的晶体生长方法中，在供给之前可以从熔融原料中除去不溶性物质。

公开(公告)号：US4909998A

公开(公告)日：1990-03-20

申请号：US351340

申请日：1989-05-09

Applicant: Jun-ichi Nishizawa

Inventor： Jun-ichi Nishizawa

IPC: C30B9/06 ,  C30B11/00 ,  C30B11/08 ,  C30B29/48 ,  H01L21/02

CPC classification number: C30B11/08 ,  C30B11/00 ,  C30B11/003 ,  C30B29/48 ,  Y10S117/90 ,  Y10S117/902 ,  Y10S117/906 ,  Y10T117/1092

Abstract: In performing a solution growth of a Group II-VI compound semiconductor crystal by relying on the temperature difference technique under controlled vapor pressure on a solution growth apparatus having a recrystallizing zone, a source crystal supply zone and a vapor pressure controlling zone enclosed in a growth quartz tube and placed under different temperatures for the respective zones, wherein a heat sink is provided at the bottom end portion of the recrystallizing zone to cause a thermal flow to pass therethrough to the outside of the whole apparatus to insure that a single crystal will grow from this bottom end portion of the zone. The quartz tube may be enclosed in a pressure-resistant tube to apply a pressure to the growth quartz tube externally thereof to avoid its destruction to enable the growth to be performed at a high temperature to obtain a high growth rate. Thus, a large size crystal having a good crystal perfection can be grown.

Abstract translation: 在通过在具有重结晶区域的溶液生长装置的控制蒸气压下依靠温度差技术进行II-VI族化合物半导体晶体的溶液生长，源晶体供给区和封闭在生长中的蒸气压控制区 石英管，并在各个区域的不同温度下放置，其中在再结晶区的底端部分设置散热器，以使热流通过其流到整个设备的外部，以确保单晶将生长 从该区域的该底端部分。 石英管可以封闭在耐压管中，以向其外部的生长石英管施加压力以避免其破坏，以使得能够在高温下进行生长以获得高生长速率。 因此，可以生长具有良好晶体完整性的大尺寸晶体。

公开(公告)号：US10829869B2

公开(公告)日：2020-11-10

申请号：US15736467

申请日：2017-05-31

Applicant: Crystal Systems Corporation

Inventor： Isamu Shindo

IPC: C30B35/00 ,  C30B11/08 ,  C30B29/06 ,  C30B17/00 ,  C30B11/00 ,  C30B13/14 ,  C30B13/08 ,  C30B15/02

Abstract: Produced is a large single crystal with no crystal grain boundary, which is a high-quality single crystal that has a uniform composition in both the vertical and horizontal directions at an optimum dopant concentration and contains only a small number of negative crystals and exsolution lamellae. A single-crystal production equipment includes at least: a quartz crucible in which a seed crystal is placed on its bottom; a powder raw material supply apparatus which supplies a powder raw material into the quartz crucible; and an infrared ray irradiation apparatus which applies an infrared ray to the powder raw material supplied into the quartz crucible from the powder raw material supply apparatus.

公开(公告)号：US5471938A

公开(公告)日：1995-12-05

申请号：US405980

申请日：1995-03-17

Applicant: Masayuki Uchida ,  Kenji Kohiro ,  Osamu Oda

Inventor： Masayuki Uchida ,  Kenji Kohiro ,  Osamu Oda

IPC: C30B11/06 ,  C30B11/00 ,  C30B27/00 ,  H01L21/208 ,  C30B11/08

CPC classification number: C30B29/40 ,  C30B11/00 ,  Y10T117/1092

Abstract: A process for growing a multielement compound single crystal, includes the steps of placing a crucible holding a raw multielement compound of a predetermined set of composition ratios Y in a vertical crystal growing furnace having a heater, melting the raw multielement compound held in the crucible with the heater to produce a melt of the raw multielement compound in the crucible, controlling the output of the heater to grow a multielement compound single crystal of a predetermined set of composition ratios X from the melt so that the melt is solidified successively upwards from part of the melt in contact with the bottom of the crucible, and feeding to the melt as a solute at least one element of the raw multielement compound from above the level of the melt in the crucible so as to maintain the predetermined set of composition ratios X of the solute during growth of the multielement compound single crystal. The process can keep constant the composition of the grown multielement compound single crystal. The process is applicable to the growth of multielement compound semiconductor single crystals and multielement compound oxide single crystals.

公开(公告)号：US4708763A

公开(公告)日：1987-11-24

申请号：US940237

申请日：1986-12-09

Applicant: Leonardus A. H. van Hoof

Inventor： Leonardus A. H. van Hoof

IPC: C30B29/32 ,  C30B11/00 ,  C30B15/00 ,  C30B11/04 ,  C30B11/08

CPC classification number: C30B11/00 ,  C30B15/00 ,  C30B29/32

Abstract: The invention relates to a method of manufacturing bismuth germanate (Bi.sub.4 Ge.sub.3 O.sub.12) crystals using the Bridgman technique. A high degree of crystal perfection and an acceptable level of inclusions are obtained by changing the stoichiometry of the starting mixture in favor of Bi.sub.2 O.sub.3, such that the starting mixture contains between 40.2 and 40.5 mol. % of Bi.sub.2 O.sub.3 and between 59.8 and 59.5 mol. % of GeO.sub.2.

Abstract translation: 本发明涉及使用Bridgman技术制造锗酸铋（Bi4Ge3O12）晶体的方法。 通过改变起始混合物的有利于Bi 2 O 3的化学计量比，可以获得高度的晶体完整性和可接受的夹杂物含量，使起始混合物含有40.2和40.5mol。 ％的Bi2O3和59.8和59.5mol之间。 ％的GeO2。