摘要:
This disclosure is directed to an electronic identification card or electronic card having various features. The electronic card may include an integrated circuit and a contact plate for electrically interfacing with the integrated circuit. The contact plate may include an array of terminal electrodes that are offset with respect to the edges of the contact plate. The electronic card may be coated with a coating layer that extends at least partially over a ferromagnetic element or film. The electronic card may also include a metal substrate having exposed chamfer portions that may provide a visual contrast to the coating layer and also improve the handling and use of the electronic card.
摘要:
This disclosure is directed to an electronic identification card or electronic card having various features. The electronic card may include an integrated circuit and a contact plate for electrically interfacing with the integrated circuit. The contact plate may include an array of terminal electrodes that are offset with respect to the edges of the contact plate. The electronic card may be coated with a coating layer that extends at least partially over a ferromagnetic element or film. The electronic card may also include a metal substrate having exposed chamfer portions that may provide a visual contrast to the coating layer and also improve the handling and use of the electronic card.
摘要:
An inductor includes: a body including a coil and a magnetic material, and external electrodes disposed on an outer surface of the body. The coil is supported by a support member, and the support member may also support an insulating wall including an open-hole pattern having a shape corresponding to a pattern of the coil. An insulating ribbon formed so that a length thereof is greater than a width thereof may be additionally disposed on at least a portion of an upper surface of the insulating wall.
摘要:
An inductor includes a support member, a plurality of conductor patterns disposed on at least one surface of the support member and supported by the support member, and an insulating structure interposed between conductor patterns adjacent each other among the plurality of conductor patterns, the insulating structure including a first insulating layer and a second insulating layer disposed on the first insulating layer, the second insulating layer covering side and upper surfaces of the conductor patterns, the second insulating layer being continuously formed along the side and upper surfaces of the conductor pattern, depending on external shapes of the side and upper surfaces of the conductor pattern disposed below the second insulating layer.
摘要:
A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor has additional layers for stabilizing the free layer against sense-current-generated magnetic fields. A ferromagnetic stabilizing layer is spaced from the free layer by a spacer layer and is exchange coupled with a second antiferromagnetic layer, the first antiferromagnetic layer being the conventional one for pinning the pinned layer in the CPP sensor. The stabilizing layer is in a vortex or other non-longitudinal magnetization pattern that is fixed by exchange coupling with the second antiferromagnetic layer. The stabilizing layer is also ferromagnetically coupled to the free layer across the spacer layer so that in the absence of both a sense current and an external magnetic field, the free and stabilization layers have similarly shaped vortex or other non-longitudinal magnetization patterns. The sense current generates a vortex magnetic field in the free layer opposite to the fixed vortex magnetization pattern in the stabilizing layer and essentially erases the effect of the vortex magnetization pattern in the free layer.
摘要:
Disclosed is a method of making a SVGMR sensor element. In the first embodiment a buffer layer is formed between a seed layer and a ferromagnetic (FM) free layer, the buffer layer being composed of alpha-Fe2O3 having a crystal lattice constant that is close to the FM free layer's crystal constant and has the same crystal structure. The metal oxide buffer layer enhances the specular scattering. In the second embodiment, a high conductivity layer (HCL) is formed over the buffer layer to create a spin filter-SVGMR. The HCL layer enhances the GMR ratio of the spin filter SVGMR. The third embodiment include a pinned FM layer comprising a three layer structure of a lower AP layer, a space layer (e.g., Ru) and an upper AP layer.
摘要翻译:公开了一种制造SVGMR传感器元件的方法。 在第一实施例中,在种子层和不含铁磁性(FM)的层之间形成缓冲层,该缓冲层由α-Fe 2 O 3 3 N 3 晶格常数接近于FM自由层的晶体常数,具有相同的晶体结构。 金属氧化物缓冲层增强了镜面散射。 在第二实施例中,在缓冲层上形成高电导率层(HCL)以产生自旋滤波器-GVGMR。 HCL层增强了旋转过滤器SVGMR的GMR比。 第三实施例包括包括下AP层的三层结构,空间层(例如Ru)和上AP层的钉扎FM层。
摘要:
A low-anisotropy magnetic material is exchange coupled in juxtaposition with a compatible body of high-anisotropy magnetic material so that a reduced external magnetic field is required for the nucleation and passage of a domain wall from the low-anisotropy material, through the interface between the low- and high-anisotropy materials, and into the high-anisotropy material. The propagation of the domain wall continues to affect a reversal in the direction of magnetization in the high-anisotropy material.
摘要:
A micro-pattern element has a heat discharge pattern formed on a fine line portion of a conductor pattern. Breakage caused by temperature elevation of the conductor pattern in response to the application of an electric current and resulting electromigration can be effectively prevented by the heat-discharge pattern formed on the fine line portion of the conductor pattern; thus, the reliability of the micro-pattern element can be remarkably improved.
摘要:
A single level masking process for producing microelectronic structures, such as magnetic bubble domain devices, which require very fine line widths. This is a subtractive dry process using a very thin, additively plated mask in order to obtain optimum lithographic resolution. Use of the very thin plated mask eliminates the need for a thick resist layer which would adversely affect resolution. In one example, a double layer metallurgy comprising a conductor layer (such as Au) and an overlying magnetically soft layer (such as NiFe) is patterned using a thin Ti (or Cr) mask. The Ti mask is subtractively patterned using a NiFe mask which is itself patterned by electroplating through a thin resist layer. The double layer NiFe/Au structure is patterned to provide devices having high aspect ratio, good pattern acuity, and uniform thicknesses, where the minimum feature is 1 micron or less.
摘要:
Magnetic bubble memory chips herein are characterized by circuits of permalloy and/or electrical conductors which include patterns designed to be sacrificed if electrical charges build up during processing or handling. Improved chip yield results.