公开(公告)号：US20180174604A1

公开(公告)日：2018-06-21

申请号：US15895236

申请日：2018-02-13

Applicant: Deutsches Elektronen-Synchrotron DESY

Inventor： Kai Schlage ,  Denise Erb ,  Ralf Röhlsberger ,  Hans-Christian Wille ,  Daniel Schumacher ,  Lars Bocklage

IPC: G11B5/39 ,  H01F10/32 ,  H01F41/30 ,  H01L43/12 ,  G11B5/85

CPC classification number: G11B5/3906 ,  G11B5/85 ,  G11B2005/3996 ,  H01F10/324 ,  H01F41/302 ,  H01L43/12 ,  Y10T428/1129

Abstract: A method of producing a multilayer magnetoelectronic device and a related device. The method includes depositing a multilayer structure including at least two ferromagnetic layers disposed one on top of the other and each having a magnetic anisotropy with a corresponding magnetic moment. A magnetization curve is specified for the magnetoelectronic device. The number of ferromagnetic layers and, for each of the ferromagnetic layers, the magnetic moment and the magnetic hardness for obtaining the specified magnetization curve are determined. For each of the ferromagnetic layers a magnetic material, a thickness, an azimuthal angle and an angle of incidence are determined for obtaining the determined magnetic moment and magnetic hardness of the respective ferromagnetic layer. The multilayer structure is deposited using the determined material, thickness, azimuthal angle and angle of incidence for each of the ferromagnetic layers.

公开(公告)号：US09558765B2

公开(公告)日：2017-01-31

申请号：US15162059

申请日：2016-05-23

Applicant: Headway Technologies, Inc.

Inventor： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

IPC: G11B5/235 ,  G11B5/31 ,  G11B5/39 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  G01R33/12 ,  G11B5/127 ,  H01F41/30 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  B82Y40/00 ,  G11B5/33 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01F1/057 ,  G11B5/00 ,  H01F10/32

CPC classification number: G11B5/235 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3153 ,  G11B5/33 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/0024 ,  G11B2005/3996 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01F1/0579 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/305 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/115

Abstract: A spin transfer oscillator (STO) with a seed/FGL/spacer/SIL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)YFeCo laminated field generation layer (FGL). The spin injection layer (SIL) may be laminated with a (A1/A2)XFeCo configuration. The FeCo layer in the SIL is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The (A1/A2)Y laminate (y=5 to 30) in the FGL may be exchange coupled with a high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO is typically formed between a main pole and trailing shield in a write head.

Abstract translation: 公开了具有种子/ FGL /间隔物/ SIL /封盖结构的自旋转移振荡器（STO），其具有由Ta制成的复合种子层和具有fcc（111）或hcp（001）织构的金属层，以增强垂直磁各向异性 （A1 / A2）YFeCo层叠场产生层（FGL）中的（PMA）。 自旋注入层（SIL）可以层叠有（A1 / A2）XFeCo构型。 SIL中的FeCo层与（A1 / A2）X层叠体交换（x为5〜50），以提高坚固性。 FGL中的（A1 / A2）Y层叠体（y = 5〜30）可以与高B层交换耦合，以实现更容易的振荡。 A1可以是Co，CoFe或CoFeR中的一种，其中R是金属，A2是Ni，NiCo或NiFe之一。 STO通常形成在写入头中的主极和后屏蔽之间。

公开(公告)号：US09208801B2

公开(公告)日：2015-12-08

申请号：US13645958

申请日：2012-10-05

Applicant: Headway Technologies, Inc.

Inventor： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

IPC: H01F10/32 ,  G11B5/33 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  G01R33/12 ,  G11B5/127 ,  G11B5/31 ,  G11B5/39 ,  H01F41/30 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  B82Y40/00 ,  H01F1/057 ,  G11B5/00

CPC classification number: G11B5/235 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3153 ,  G11B5/33 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/0024 ,  G11B2005/3996 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01F1/0579 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/305 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/115

Abstract: A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head.

Abstract translation: 公开了具有种子/ SIL /间隔物/ FGL /覆盖构型的自旋转移振荡器，其具有由Ta制成的复合种子层和具有fcc（111）或hcp（001）结构的金属层，以增强垂直磁各向异性（PMA） 在叠层（A1 / A2）X层叠自旋注入层（SIL）中。 场发生层（FGL）由高Bs材料如FeCo制成。 或者，STO具有种子/ FGL /间隔物/ SIL /覆盖配置。 SIL可以包括与（A1 / A2）X层压体交换耦合的FeCo层（x为5至50）以改善坚固性。 FGL可以包括与高Bs层交换耦合的（A1 / A2）Y层叠体（y = 5〜30），以实现更容易的振荡。 A1可以是Co，CoFe或CoFeR中的一种，其中R是金属，A2是Ni，NiCo或NiFe之一。 STO可以形成在写入头中的主极和后屏蔽之间。

公开(公告)号：US09147834B2

公开(公告)日：2015-09-29

申请号：US14244924

申请日：2014-04-04

Applicant: Headway Technologies, Inc.

Inventor： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

IPC: H01L43/02 ,  H01L43/12 ,  G11B5/39 ,  B82Y25/00 ,  B82Y40/00 ,  H01F41/30 ,  H01L29/66 ,  H01L43/10 ,  H01L43/08 ,  H01F1/40 ,  H01F10/193 ,  H01F10/32 ,  H01L29/82

CPC classification number: H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3929 ,  G11B5/3967 ,  H01F1/401 ,  H01F10/193 ,  H01F10/1936 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/303 ,  H01L29/66984 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129

Abstract: The performance of an MR device has been improved by inserting one or more Magneto-Resistance Enhancing Layers (MRELs) into approximately the center of one or more of the magnetic layers such as an inner pinned (AP1) layer, spin injection layer (SIL), field generation layer (FGL), and a free layer. An MREL is a layer of a low band gap, high electron mobility semiconductor such as ZnO or a semimetal such as Bi. The MREL may further comprise a first conductive layer that contacts a bottom surface of the semiconductor or semimetal layer, and a second conductive layer that contacts a top surface of the semiconductor or semimetal layer.

公开(公告)号：US09007055B2

公开(公告)日：2015-04-14

申请号：US13057076

申请日：2009-08-10

Applicant: Tomoki Ono ,  Yasunori Abe ,  Fumio Shirasaki

Inventor： Tomoki Ono ,  Yasunori Abe ,  Fumio Shirasaki

IPC: G01B7/30 ,  G01R33/09 ,  B82Y25/00 ,  H01F10/32 ,  H01L43/08

CPC classification number: G01R33/093 ,  B82Y25/00 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3295 ,  H01L43/08 ,  Y10T428/1121 ,  Y10T428/1129

Abstract: Provided are a self-pinned spin valve magnetoresistance effect film, a magnetic sensor using the same, and a rotation angle detection device. The self-pinned spin valve magnetoresistance effect film has a strong coupling magnetic field in a pinned layer, a small reduction in the change in resistance, and superior resistance to magnetic fields without reducing the coercive force in a first ferromagnetic layer, which is a pinned layer in the film, even when exposed to a strong external magnetic field. By inserting a non-magnetic layer between a ground layer and a pinned layer to form the spin valve magnetoresistance effect film, the self-pinned spin valve magnetoresistance effect film having superior resistance to magnetic fields, a magnetic sensor using the same, and a rotation angle detection device are obtained.

Abstract translation: 提供了一种自动钉扎自旋阀磁阻效应膜，使用其的磁性传感器和旋转角度检测装置。 自锁自旋阀磁阻效应膜在被钉扎层中具有强耦合磁场，电阻变化的小的减小以及优异的磁场阻力，而不会降低第一铁磁层中的矫顽力，这是固定的 即使暴露在强大的外部磁场下，也可以在膜中进行。 通过在接地层和被钉扎层之间插入非磁性层以形成自旋阀磁电阻效应膜，具有优异的抗磁场性的自针式自旋阀磁阻效应膜，使用该磁性的磁性传感器和旋转 得到角度检测装置。

公开(公告)号：US08988822B2

公开(公告)日：2015-03-24

申请号：US13645947

申请日：2012-10-05

Applicant: Headway Technologies, Inc.

Inventor： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

IPC: G11B5/235 ,  G11B5/31 ,  G11B5/39 ,  G11B5/127 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  G01R33/12 ,  H01F10/32 ,  H01F41/30 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  B82Y40/00 ,  G11B5/00

CPC classification number: G11B5/235 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3153 ,  G11B5/33 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/0024 ,  G11B2005/3996 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01F1/0579 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/305 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/115

Abstract: A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head.

Abstract translation: 公开了具有种子/ SIL /间隔物/ FGL /覆盖构型的自旋转移振荡器，其具有由Ta制成的复合种子层和具有fcc（111）或hcp（001）结构的金属层，以增强垂直磁各向异性（PMA） 在叠层（A1 / A2）X层叠自旋注入层（SIL）中。 场发生层（FGL）由高Bs材料如FeCo制成。 或者，STO具有种子/ FGL /间隔物/ SIL /覆盖配置。 SIL可以包括与（A1 / A2）X层压体交换耦合的FeCo层（x为5至50）以改善坚固性。 FGL可以包括与高Bs层交换耦合的（A1 / A2）Y层叠体（y = 5〜30），以实现更容易的振荡。 A1可以是Co，CoFe或CoFeR中的一种，其中R是金属，A2是Ni，NiCo或NiFe之一。 STO可以形成在写入头中的主极和后屏蔽之间。

公开(公告)号：US20150064499A1

公开(公告)日：2015-03-05

申请号：US14475800

申请日：2014-09-03

Applicant: Deutsches Elektronen-Synchrotron DESY

Inventor： Kai Schlage ,  Denise Erb ,  Ralf Röhlsberger ,  Hans-Christian Wille ,  Daniel Schumacher ,  Lars Bocklage

IPC: G11B5/39 ,  G11B5/85

CPC classification number: G11B5/3906 ,  G11B5/85 ,  G11B2005/3996 ,  H01F10/324 ,  H01F41/302 ,  H01L43/12 ,  Y10T428/1129

Abstract: A method of producing a multilayer magnetoelectronic device and a related device. The method includes depositing a multilayer structure including at least two ferromagnetic layers disposed one on top of the other and each having a magnetic anisotropy with a corresponding magnetic moment. A magnetization curve is specified for the magnetoelectronic device. The number of ferromagnetic layers and, for each of the ferromagnetic layers, the magnetic moment and the magnetic hardness for obtaining the specified magnetization curve are determined. For each of the ferromagnetic layers a magnetic material, a thickness, an azimuthal angle and an angle of incidence are determined for obtaining the determined magnetic moment and magnetic hardness of the respective ferromagnetic layer. The multilayer structure is deposited using the determined material, thickness, azimuthal angle and angle of incidence for each of the ferromagnetic layers.

Abstract translation: 一种制造多层磁电子器件的方法和相关器件。 该方法包括沉积包括至少两个铁磁层的多层结构，该两层铁磁层一个放置在另一个之上，并且各自具有相应磁矩的磁各向异性。 为磁电子器件规定了磁化曲线。 确定铁磁层的数量，并且对于每个铁磁层，确定用于获得规定的磁化曲线的磁矩和磁性硬度。 对于每个铁磁层，确定磁性材料，厚度，方位角和入射角，以获得确定的铁磁层的磁矩和磁性硬度。 使用确定的材料，厚度，方位角和每个铁磁层的入射角来沉积多层结构。

公开(公告)号：US08911888B2

公开(公告)日：2014-12-16

申请号：US11957476

申请日：2007-12-16

Applicant: Olav Hellwig ,  Bruce D. Terris ,  Jan-Ulrich Thiele

Inventor： Olav Hellwig ,  Bruce D. Terris ,  Jan-Ulrich Thiele

IPC: G11B5/39 ,  H01L27/22 ,  G11C11/16

CPC classification number: G11C11/161 ,  G11C11/16 ,  G11C11/1675 ,  G11C2213/71 ,  H01L27/222 ,  Y10T428/1107 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129

Abstract: Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. The data storage layers are each formed from a multi-layer structure. At ambient temperatures, the multi-layer structures exhibit an antiparallel coupling state with a near zero net magnetic moment. At higher transition temperatures, the multi-layer structures transition from the antiparallel coupling state to a parallel coupling state with a net magnetic moment. At yet higher temperatures, the multi-layer structure transitions from the antiparallel coupling state to a receiving state where the coercivity of the multi-layer structures drops below a particular level so that magnetic fields from write elements or neighboring data storage layers may imprint data into the data storage layer.

Abstract translation: 公开了磁存储器和方法。 如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。 数据存储层各自由多层结构形成。 在环境温度下，多层结构表现出具有接近零净磁矩的反平行耦合状态。 在较高的转变温度下，多层结构从反平行耦合状态转变为具有净磁矩的平行耦合状态。 在更高的温度下，多层结构从反平行耦合状态转变到多层结构的矫顽力低于特定水平的接收状态，使得来自写入元件或相邻数据存储层的磁场可以将数据压印到 数据存储层。

公开(公告)号：US20140363699A1

公开(公告)日：2014-12-11

申请号：US14293199

申请日：2014-06-02

Applicant: International Business Machines Corporation

Inventor： Giovanni Cherubini ,  Simeon Furrer ,  Jens Jelitto ,  Mark A. Lantz

IPC: G11B5/39

CPC classification number: G11B5/39 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3929 ,  G11B5/3948 ,  G11B5/3958 ,  G11B2005/3996 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129

Abstract: A current-perpendicular-to-plane magnetoresistive read sensor includes a stack of layers extending along a stacking direction, and an edge surface parallel to the stacking direction that forms at least part of a bearing surface of the read sensor, the bearing surface designed to face a recording medium. The stack of layers includes a first contact layer, a ferromagnetic free layer whose magnetic orientation varies according to an applied magnetic field, above the first contact layer, a non-magnetic layer above the ferromagnetic layer, a ferromagnetic spin injection layer above the non-magnetic layer, and a second contact layer above the spin injection layer, such that a current can flow between the second contact layer and the first contact layer along a current-perpendicular-to-plane direction, parallel to the stacking direction. The stack of layers further includes a series of structures extending along a direction parallel to the bearing surface and perpendicular to the stacking direction.

Abstract translation: 电流垂直于平面的磁阻读取传感器包括沿堆叠方向延伸的层叠层，以及平行于层叠方向的边缘表面，其形成读取传感器的支承表面的至少一部分，该轴承表面被设计为 面对记录介质。 层叠层包括第一接触层，铁磁自由层，其磁取向根据所施加的磁场而变化，在第一接触层上方，铁磁层上方的非磁性层，非磁性层上方的铁磁自旋注入层， 磁性层和自旋注入层上方的第二接触层，使得电流可以沿平行于堆叠方向的电流垂直于平面的方向在第二接触层和第一接触层之间流动。 层叠层还包括沿着平行于支承表面并垂直于层叠方向的方向延伸的一系列结构。

公开(公告)号：US20140153139A1

公开(公告)日：2014-06-05

申请号：US14176989

申请日：2014-02-10

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Akihiko TAKEO ,  Yoshihiko FUJI ,  Hiromi YUASA ,  Michiko HARA ,  Shuichi MURAKAMI ,  Hideaki FUKUZAWA

IPC: G11B5/39

CPC classification number: G11B5/3903 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3983 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/303 ,  H01F41/325 ,  H01L43/12 ,  Y10T428/1129

Abstract: According to one embodiment, a method of manufacturing a magnetoresistive element includes a layered structure and a pair of electrodes, the layered structure including a cap layer, a magnetization pinned layer, a magnetization free layer, a spacer layer and a functional layer provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer and including an oxide, the method including forming a film including a base material of the functional layer, performing an oxidation treatment on the film using a gas containing oxygen in a form of at least one selected from the group consisting of molecule, ion, plasma and radical, and performing a reduction treatment using a reducing gas on the film after the oxidation treatment.

Abstract translation: 根据一个实施例，制造磁阻元件的方法包括层状结构和一对电极，所述层叠结构包括盖层，磁化固定层，磁化自由层，间隔层和功能层 在磁化被钉扎层和间隔层之间，在间隔层和磁化自由层之间，在磁化自由层中，或在磁化自由层和覆盖层之间并包括氧化物的磁化钉扎层，该方法包括形成 膜，其包括功能层的基材，使用含有选自分子，离子，等离子体和自由基中的至少一种形式的含氧气体，对膜进行氧化处理，并使用 在氧化处理后还原气膜。