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公开(公告)号：US11990868B2
公开(公告)日：2024-05-21
申请号：US17435577
申请日：2020-02-21
Applicant: TOKYO INSTITUTE OF TECHNOLOGY
Inventor： Nam Hai Pham , Takanori Shirokura
CPC classification number: H03B15/006 , G01R33/093 , G11B5/3909 , H10N50/10 , H10N50/85 , H10N52/80
Abstract: An oscillator includes a spin current source, and a free layer coupled to the spin current source. The free layer has a magnetization hard axis that is parallel to a quantization axis of a spin current injected by the spin Hall effect of the spin current source.
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公开(公告)号：US11990167B2
公开(公告)日：2024-05-21
申请号：US17352658
申请日：2021-06-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Bo-Jhih Shen , Kuang-I Liu , Joung-Wei Liou , Jinn-Kwei Liang , Yi-Wei Chiu , Chin-Hsing Lin , Li-Te Hsu , Han-Ting Tsai , Cheng-Yi Wu , Shih-Ho Lin
CPC classification number: G11C11/161 , H10B61/00 , H10N50/01 , H10N50/10 , H10N50/85 , G01R33/098 , G11B5/3909 , G11C2211/5615
Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.
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公开(公告)号：US11908496B2
公开(公告)日：2024-02-20
申请号：US18082721
申请日：2022-12-16
Applicant: Western Digital Technologies, Inc.
Inventor： Quang Le , Brian R. York , Cherngye Hwang , Susumu Okamura , Xiaoyong Liu , Kuok San Ho , Hisashi Takano
CPC classification number: G11B5/3909 , G11B5/313 , G11B5/314 , G11C11/161 , H01F10/329 , H01F10/3254 , H10B61/00 , H10N50/85 , H10N52/00 , H10N52/80 , G11B5/39
Abstract: The present disclosure generally relate to spin-orbit torque (SOT) devices comprising a topological insulator (TI) modulation layer. The TI modulation layer comprises a plurality of bismuth or bismuth-rich composition modulation layers, a plurality of TI lamellae layers comprising BiSb having a (012) crystal orientation, and a plurality of texturing layers. The TI lamellae layers comprise dopants or clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material. The clusters of atoms are configured to have a grain boundary glass forming temperature of less than about 400° C. Doping the TI lamellae layers comprising BiSb having a (012) crystal orientation with clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material enable the SOT MTJ device to operate at higher temperatures while inhibiting migration of Sb from the BiSb of the TI lamellae layers.
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4.发明公开
公开(公告)号：US20240032437A1
公开(公告)日：2024-01-25
申请号：US18197495
申请日：2023-05-15
Applicant: Western Digital Technologies, Inc.
Inventor： Quang LE , Brian R. YORK , Cherngye HWANG , Xiaoyong LIU , Susumu OKAMURA , Michael A. GRIBELYUK , Xiaoyu XU , Randy G. SIMMONS , Kuok San HO , Hisashi TAKANO
CPC classification number: H10N50/10 , H10N50/85 , G11C11/161 , H10B61/00 , G01R33/093 , G11B5/3909
Abstract: The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprises a nonmagnetic buffer layer, a nonmagnetic interlayer, a ferromagnetic layer, and a nonmagnetic barrier layer. One or more of the barrier layer, interlayer, and buffer layer comprise a polycrystalline non-Heusler alloy material, or a Heusler alloy and a material selected from the group consisting of: Cu, Ag, Ge, Mn, Ni, Co, Mo, W, Sn, B, and In. The Heusler alloy is a full Heusler alloy comprising X2YZ or a half Heusler alloy comprising XYZ, where X is one of: Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, Ag, Ir, Pt, and Au, Y is one of: Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, Hf, and W, and Z is one of: B, Al, Si, Ga, Ge, As, In, Sn, Sb, and Bi.
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公开(公告)号：US20240005975A1
公开(公告)日：2024-01-04
申请号：US18457641
申请日：2023-08-29
Applicant: Sony Group Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
CPC classification number: G11C11/161 , H01F10/329 , G11C11/155 , H01F10/3254 , H01F10/3286 , G11B5/3906 , H10B61/22 , H10N50/10 , H10N50/80 , G11B5/3909 , G11C11/15 , H01F10/3268 , H01F10/3272 , G11C11/1675
Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.
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公开(公告)号：US20230386511A1
公开(公告)日：2023-11-30
申请号：US18234147
申请日：2023-08-15
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI
IPC: G11B5/39 , H01L27/105 , H10B61/00 , H10N50/10 , H10N50/85 , G11C11/16 , H01F10/193
CPC classification number: G11B5/3909 , G11B5/39 , H01L27/105 , H10B61/22 , H10N50/10 , H10N50/85 , G11C11/161 , H01F10/1936 , G11B2005/3996 , H01F1/405
Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a chemical formula of AB2Ox, and has a spinel structure in which cations are arranged in a disordered manner, A represents a divalent cation that is either Mg or Zn, and B represents a trivalent cation that includes a plurality of elements selected from the group consisting of Al, Ga, and In.
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公开(公告)号：US11798583B1
公开(公告)日：2023-10-24
申请号：US17478461
申请日：2021-09-17
Applicant: Seagate Technology LLC
Inventor： Jie Gong , Steven C. Riemer , John A. Rice , Michael C. Kautzky
CPC classification number: G11B5/3163 , C25D3/562 , C25D5/18 , G11B5/3909
Abstract: A method includes immersing a wafer in an electrolyte including a plurality of compounds having elements of a thermally stable soft magnetic material. The method also includes applying a combined stepped and pulsed current to the wafer when the wafer is immersed in an electrolyte. The wafer is removed from the electrolyte when a layer of the thermally stable soft magnetic material is formed on the wafer.
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公开(公告)号：US11763841B2
公开(公告)日：2023-09-19
申请号：US17412394
申请日：2021-08-26
Applicant: TDK CORPORATION
Inventor： Tomoyuki Sasaki
IPC: H01L29/82 , G11B5/39 , H01L27/105 , H10B61/00 , H10N50/10 , H10N50/85 , G11C11/16 , H01F10/193 , H01F1/40
CPC classification number: G11B5/3909 , G11B5/39 , G11C11/161 , H01F10/1936 , H01L27/105 , H10B61/22 , H10N50/10 , H10N50/85 , G11B2005/3996 , H01F1/405
Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a chemical formula of AB2Ox, and has a spinel structure in which cations are arranged in a disordered manner, A represents a divalent cation that is either Mg or Zn, and B represents a trivalent cation that includes a plurality of elements selected from the group consisting of Al, Ga, and In.
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公开(公告)号：US20230225136A1
公开(公告)日：2023-07-13
申请号：US18178523
申请日：2023-03-05
Inventor： ALEXANDER KALNITSKY , HARRY-HAK-LAY CHUANG , SHENG-HAUNG HUANG , TIEN-WEI CHIANG
CPC classification number: H10B61/22 , H10N50/01 , H10N50/10 , G11B5/3909 , G01R33/098 , G11C2211/5615
Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate, a transistor region, a first and a second contact plug, a first metal via, a magnetic tunneling junction (MTJ) structure, and a metal interconnect. The transistor region includes a gate over the substrate, and a first and a second doped regions at least partially in the substrate. The first and the second contact plug are over the transistor region. The first and the second contact plug include a coplanar upper surface. The first metal via and the MTJ structure are over the first and the second contact plug, respectively. The first metal via is leveled with the MTJ structure. The metal interconnect is over the first metal via and the MTJ structure, and the metal interconnect includes at least two second metal vias in contact with the first metal via and the MTJ structure, respectively.
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公开(公告)号：US20190237100A1
公开(公告)日：2019-08-01
申请号：US16377293
申请日：2019-04-08
Applicant: International Business Machines Corporation
Inventor： Milad Aria , Icko E. T. Iben , Guillermo F. Paniagua
CPC classification number: G11B5/455 , G11B5/3909
Abstract: Embodiments of the present invention provide methods, systems, and computer program products for detecting damage to tunneling magnetoresistance (TMR) sensors. In one embodiment, resistances of a TMR sensor are measured upon application of one or both of negative polarity bias current and positive polarity bias current at a plurality of current magnitudes. Resistances of the TMR sensor can then be analyzed with respect to current, voltage, voltage squared, and/or power, including analyses of changes to slopes calculated with these values and hysteresis-induced fluctuations, all of which can be used to detect damage to the TMR sensor. The present invention also describes methods to utilize the measured values of neighbor TMR sensors to distinguish normal versus damaged parts for head elements containing multiple TMR read elements.
