公开(公告)号：US09166065B2

公开(公告)日：2015-10-20

申请号：US13419011

申请日：2012-03-13

Applicant: Yuichi Ohsawa ,  Tadaomi Daibou ,  Yushi Kato ,  Eiji Kitagawa ,  Saori Kashiwada ,  Minoru Amano ,  Junichi Ito

Inventor： Yuichi Ohsawa ,  Tadaomi Daibou ,  Yushi Kato ,  Eiji Kitagawa ,  Saori Kashiwada ,  Minoru Amano ,  Junichi Ito

IPC: H01L29/82 ,  H01L43/08 ,  H01L43/10 ,  H01L27/22 ,  H01F10/12 ,  H01F10/32 ,  H01F41/30 ,  B82Y40/00 ,  G11C11/16

CPC classification number: H01L29/82 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/126 ,  H01F10/3286 ,  H01F41/303 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a magnetoresistive effect element includes a first magnetic film having magnetic anisotropy and an invariable magnetization direction in a direction perpendicular to a film plane, a second magnetic film having magnetic anisotropy and a variable magnetization direction in the direction perpendicular to the film plane, and a nonmagnetic film between the first magnetic film and the second magnetic film. At least one of the first and second magnetic films includes a first magnetic layer. The first magnetic layer includes a rare earth metal, a transition metal, and boron.

Abstract translation: 根据一个实施例，磁阻效应元件包括在垂直于膜平面的方向上具有磁各向异性和不变磁化方向的第一磁性膜，在垂直于膜的方向上具有磁各向异性和可变磁化方向的第二磁性膜 平面和第一磁性膜与第二磁性膜之间的非磁性膜。 第一和第二磁性膜中的至少一个包括第一磁性层。 第一磁性层包括稀土金属，过渡金属和硼。

公开(公告)号：US20150002851A1

公开(公告)日：2015-01-01

申请号：US14352758

申请日：2012-09-14

Applicant: Akira Takada

Inventor： Akira Takada

IPC: H01S5/065 ,  G01B9/02 ,  H01S5/50

CPC classification number: H01S5/065 ,  G01B9/02091 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/303 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01S5/50

Abstract: This mode-locked laser light source device comprises a semiconductor optical amplifier wherein carriers are generated by the injection of an injection current thereinto, a pulse of laser light is amplified by the consumption of the carriers, and phase modulation equivalent to self-phase modulation depending on the pulse intensity of the laser light occurs due to a change in the density carriers; a sweep modulation unit which the oscillation wavelength of the pulse of the laser light emitted from the semiconductor optical amplifier is variable; a resonator which returns the pulse of the laser light modulated by the sweep modulation unit to the semiconductor optical amplifier to cause a laser oscillation phenomenon; and a dispersion compensator which is used in an anomalous dispersion region and changes the return time of the pulse of the laser light depending on the wavelength of the pulse of laser light guided in the resonator.

Abstract translation: 该锁模激光光源装置包括半导体光放大器，其中通过注入注入电流产生载流子，激光脉冲被载波的消耗放大，相位调制相当于自相位调制依赖 由于密度载体的变化，发生激光的脉冲强度; 从半导体光放大器发射的激光的脉冲的振荡波长可变的扫描调制单元; 谐振器，其将由扫描调制单元调制的激光的脉冲返回到半导体光放大器以引起激光振荡现象; 以及色散补偿器，其用于异常色散区域，并且根据在谐振器中引导的激光的脉冲的波长来改变激光的脉冲的返回时间。

公开(公告)号：US08692343B2

公开(公告)日：2014-04-08

申请号：US12799468

申请日：2010-04-26

Applicant: Kunliang Zhang ,  Min Li ,  Yuchen Zhou

Inventor： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

IPC: H01L43/08 ,  H01L29/82

CPC classification number: H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3929 ,  G11B5/3967 ,  H01F1/401 ,  H01F10/193 ,  H01F10/1936 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/303 ,  H01L29/66984 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129

Abstract: The performance of an MR device has been improved by inserting one or more Magneto-Resistance Enhancing Layers (MRELs) into approximately the center of one or more of the active layers (such as AP1, SIL, FGL, and Free layers). An MREL is a layer of a low band gap, high electron mobility semiconductor such as ZnO or a semimetal such as Bi.

Abstract translation: 通过将一个或多个磁阻增强层（MREL）插入到一个或多个有源层（例如AP1，SIL，FGL和自由层）的大约中心，改善了MR器件的性能。 MREL是低带隙的层，诸如ZnO的高电子迁移率半导体或诸如Bi的半金属。

公开(公告)号：US08685491B2

公开(公告)日：2014-04-01

申请号：US13186389

申请日：2011-07-19

Applicant: Akihiko Takeo ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami ,  Hideaki Fukuzawa

Inventor： Akihiko Takeo ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami ,  Hideaki Fukuzawa

IPC: G11B5/48

CPC classification number: G11B5/3903 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3983 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/303 ,  H01F41/325 ,  H01L43/12 ,  Y10T428/1129

Abstract: According to one embodiment, a method of manufacturing a magnetoresistive element includes a layered structure and a pair of electrodes, the layered structure including a cap layer, a magnetization pinned layer, a magnetization free layer, a spacer layer and a functional layer provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer and including an oxide, the method including forming a film including a base material of the functional layer, performing an oxidation treatment on the film using a gas containing oxygen in a form of at least one selected from the group consisting of molecule, ion, plasma and radical, and performing a reduction treatment using a reducing gas on the film after the oxidation treatment.

Abstract translation: 根据一个实施例，制造磁阻元件的方法包括层状结构和一对电极，所述层叠结构包括盖层，磁化固定层，磁化自由层，间隔层和功能层 在磁化被钉扎层和间隔层之间，在间隔层和磁化自由层之间，在磁化自由层中，或在磁化自由层和覆盖层之间并包括氧化物的磁化钉扎层，该方法包括形成 膜，其包括功能层的基材，使用含有选自分子，离子，等离子体和自由基中的至少一种形式的含氧气体，对膜进行氧化处理，并使用 在氧化处理后还原气膜。

公开(公告)号：US08513752B2

公开(公告)日：2013-08-20

申请号：US13613006

申请日：2012-09-13

Applicant: Xilin Peng ,  Konstantin Nikolaev ,  Taras Pokhil ,  Victor Sapazhnikov ,  Yonghua Chen

Inventor： Xilin Peng ,  Konstantin Nikolaev ,  Taras Pokhil ,  Victor Sapazhnikov ,  Yonghua Chen

IPC: H01L29/82

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3204 ,  H01F10/3254 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/12

Abstract: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.

Abstract translation: 磁性隧道结包括具有第一参考层侧和相对的第二参考层侧的非晶铁磁参考层。 第一参考层侧具有比第二参考层侧更高的硼浓度。 氧化镁隧道势垒层设置在非晶铁磁参考层的第二侧上。 氧化镁隧道势垒层具有晶体结构。 非晶铁磁自由层设置在氧化镁隧道势垒层上。

公开(公告)号：US08498150B2

公开(公告)日：2013-07-30

申请号：US13476944

申请日：2012-05-21

Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

IPC: G11C11/14

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/303 ,  H01L27/228 ,  H01L43/08

Abstract: A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.

公开(公告)号：US08498149B2

公开(公告)日：2013-07-30

申请号：US13476930

申请日：2012-05-21

Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

IPC: G11C11/14

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/303 ,  H01L27/228 ,  H01L43/08

Abstract: A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.

公开(公告)号：US08484830B2

公开(公告)日：2013-07-16

申请号：US13065966

申请日：2011-04-04

Applicant: Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng

Inventor： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng

IPC: G11B5/187 ,  G11B5/23

CPC classification number: H01L43/08 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3281 ,  H01F10/3295 ,  H01F41/18 ,  H01F41/303 ,  H01L43/10 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T428/1114 ,  Y10T428/1129 ,  Y10T428/115

Abstract: A CPP-GMR spin valve having a CoFe/NiFe composite free layer is disclosed in which Fe content of the CoFe layer ranges from 20 to 70 atomic % and Ni content in the NiFe layer varies, from 85 to 100 atomic % to maintain low Hc and λs values. A small positive magnetostriction value in a Co75Fe25 layer is used to offset a negative magnetostriction value in a Ni90Fe10layer. The CoFe layer is deposited on a sensor stack in which a seed layer, AFM layer, pinned layer, and non-magnetic spacer layer are sequentially formed on a substrate. After a NiFe layer and capping layer are sequentially deposited on the CoFe layer, the sensor stack is patterned to give a sensor element with top and bottom surfaces and a sidewall connecting the top and bottom surfaces. Thereafter, a dielectric layer is formed adjacent to the sidewalls.

Abstract translation: 公开了一种具有CoFe / NiFe复合自由层的CPP-GMR自旋阀，其中CoFe层的Fe含量为20〜70原子％，NiFe层中的Ni含量为85〜100原子％，保持低Hc 和lambdas值。 使用Co75Fe25层中的小的正磁致伸缩值来抵消Ni90Fe10层中的负磁致伸缩值。 CoFe层沉积在传感器堆叠上，其中种子层，AFM层，钉扎层和非磁性间隔层依次形成在基底上。 在NiFe层和覆盖层顺序地沉积在CoFe层上之后，传感器堆叠被图案化以给出具有顶表面和底表面的传感器元件以及连接顶表面和底表面的侧壁。 此后，与侧壁相邻地形成电介质层。

公开(公告)号：US20130099338A1

公开(公告)日：2013-04-25

申请号：US13604537

申请日：2012-09-05

Applicant: Masahiko Nakayama ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Hisanori Aikawa ,  Masaru Toko

Inventor： Masahiko Nakayama ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Hisanori Aikawa ,  Masaru Toko

IPC: H01L29/82

CPC classification number: H01S5/065 ,  G01B9/02091 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/303 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01S5/50

Abstract: According to one embodiment, a magnetic memory element includes a memory layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction, a first nonmagnetic layer provided on the memory layer, and a reference layer provided on the first nonmagnetic layer, having magnetic anisotropy perpendicular to a film surface, and having an invariable magnetization direction. An area of the memory layer is larger than that of the reference layer. Magnetization in an end portion of the memory layer is smaller than that in a central portion of the memory layer.

Abstract translation: 根据一个实施例，磁存储元件包括具有垂直于膜表面并具有可变磁化方向的磁各向异性的存储层，设置在存储层上的第一非磁性层和设置在第一非磁性层上的参考层，具有 垂直于膜表面的磁各向异性，并且具有不变的磁化方向。 存储层的面积大于参考层的面积。 存储层的端部的磁化小于存储层的中央部的磁化。

公开(公告)号：US08426222B2

公开(公告)日：2013-04-23

申请号：US13248360

申请日：2011-09-29

Applicant: Xiaohua Lou ,  Yuankai Zheng ,  Wenzhong Zhu ,  Wei Tian ,  Zheng Gao

Inventor： Xiaohua Lou ,  Yuankai Zheng ,  Wenzhong Zhu ,  Wei Tian ,  Zheng Gao

IPC: H01L29/82 ,  G11C11/02

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/303 ,  H01L43/12

Abstract: A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature, a ferromagnetic pinned reference layer, and a non-magnetic spacer layer between the free layer and the reference layer. During a writing process, the metal oxide layer is non-magnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the metal oxide layer provides reduced switching currents.

Abstract translation: 具有铁磁自由层的磁性堆叠，在第一温度下为反铁磁性且在比第一温度高的第二温度下为非磁性的金属氧化物层，铁磁性固定基准层和非磁性间隔层之间， 层和参考层。 在写入过程中，金属氧化物层是非磁性的。 对于诸如磁性隧道结电池的磁存储器单元，金属氧化物层提供降低的开关电流。