公开(公告)号：US08824108B2

公开(公告)日：2014-09-02

申请号：US13728281

申请日：2012-12-27

Applicant: Yoshihiko Fuji ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa

Inventor： Yoshihiko Fuji ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC: G11B5/39 ,  G11C11/16 ,  G11B5/127 ,  G01R33/09 ,  H01L43/10 ,  H01L43/08 ,  H01L27/22

CPC classification number: G11B5/1274 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3983 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a magneto-resistance effect element includes: a first electrode; a second electrode; a first magnetic layer provided between the first and the second electrodes; a second magnetic layer provided between the first magnetic layer and the second electrode; and an oxide layer of a metal oxide provided between the first magnetic layer and the second magnetic layer. The oxide layer includes wustite crystal grains of a wustite structure with a (1 1 1) plane orientation containing iron. A lattice spacing of a (1 1 1) plane of the wustite crystal grains is not less than 0.253 nanometers and not more than 0.275 nanometers.

Abstract translation: 根据一个实施例，磁阻效应元件包括：第一电极; 第二电极; 设置在第一和第二电极之间的第一磁性层; 设置在所述第一磁性层和所述第二电极之间的第二磁性层; 以及设置在第一磁性层和第二磁性层之间的金属氧化物的氧化物层。 氧化物层包括具有含（111）面取向的方铁矿结构的方铁矿晶粒含铁。 方铁矿晶粒的（111）面的晶格间距不小于0.253纳米，不大于0.275纳米。

公开(公告)号：US08685491B2

公开(公告)日：2014-04-01

申请号：US13186389

申请日：2011-07-19

Applicant: Akihiko Takeo ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami ,  Hideaki Fukuzawa

Inventor： Akihiko Takeo ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami ,  Hideaki Fukuzawa

IPC: G11B5/48

CPC classification number: G11B5/3903 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3983 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/303 ,  H01F41/325 ,  H01L43/12 ,  Y10T428/1129

Abstract: According to one embodiment, a method of manufacturing a magnetoresistive element includes a layered structure and a pair of electrodes, the layered structure including a cap layer, a magnetization pinned layer, a magnetization free layer, a spacer layer and a functional layer provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer and including an oxide, the method including forming a film including a base material of the functional layer, performing an oxidation treatment on the film using a gas containing oxygen in a form of at least one selected from the group consisting of molecule, ion, plasma and radical, and performing a reduction treatment using a reducing gas on the film after the oxidation treatment.

Abstract translation: 根据一个实施例，制造磁阻元件的方法包括层状结构和一对电极，所述层叠结构包括盖层，磁化固定层，磁化自由层，间隔层和功能层 在磁化被钉扎层和间隔层之间，在间隔层和磁化自由层之间，在磁化自由层中，或在磁化自由层和覆盖层之间并包括氧化物的磁化钉扎层，该方法包括形成 膜，其包括功能层的基材，使用含有选自分子，离子，等离子体和自由基中的至少一种形式的含氧气体，对膜进行氧化处理，并使用 在氧化处理后还原气膜。

公开(公告)号：US08649127B2

公开(公告)日：2014-02-11

申请号：US13240062

申请日：2011-09-22

Applicant: Yoshihiko Fuji ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Shuichi Murakami

Inventor： Yoshihiko Fuji ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Shuichi Murakami

IPC: G11B5/127

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3929 ,  G11B5/3983 ,  G11B2005/3996

Abstract: According to one embodiment, a magneto-resistive effect device includes a stacked body, a pair of electrodes for supplying current in a stacking direction of the stacked body. The stacked body includes a first magnetic layer, a second magnetic layer, and a spacer layer disposed between the first magnetic layer and the second magnetic layer. At least one of the first magnetic layer, the second magnetic layer, and the spacer layer includes an oxide layer formed from a metal oxide. A crystalline structure of the metal oxide is a NaCl structure.

Abstract translation: 根据一个实施例，磁阻效应装置包括层叠体，用于在层叠体的层叠方向上提供电流的一对电极。 层叠体包括设置在第一磁性层和第二磁性层之间的第一磁性层，第二磁性层和间隔层。 第一磁性层，第二磁性层和间隔层中的至少一个包括由金属氧化物形成的氧化物层。 金属氧化物的晶体结构是NaCl结构。

公开(公告)号：US08284518B2

公开(公告)日：2012-10-09

申请号：US13472314

申请日：2012-05-15

Applicant: Hiromi Yuasa ,  Tomoko Taguchi ,  Hideaki Fukuzawa

Inventor： Hiromi Yuasa ,  Tomoko Taguchi ,  Hideaki Fukuzawa

IPC: G11B5/31 ,  G11B5/465

CPC classification number: G11B5/314 ,  G11B5/02 ,  G11B5/1278 ,  G11B5/3163 ,  G11B2005/0002

Abstract: An example magnetic recording head includes a main magnetic pole containing a ferromagnetic layer and a main magnetic pole-magnetization fixing portion containing an anti-ferromagnetic layer in contact with at least one side surface of the main magnetic pole. A heater for the main magnetic pole is configured so as to include an oxide layer with a metal path therein embedded in or provided in the vicinity of the main magnetic pole-magnetization fixing portion and a pair of electrodes, provided in the vicinity of the oxide layer, for flowing a current parallel to a surface of a recording medium through the metal path. A magnetic field generator generates a magnetic field so as to direct a magnetization of the main magnetic pole in one direction.

Abstract translation: 示例性的磁记录头包括含有铁磁层的主磁极和包含与主磁极的至少一个侧表面接触的反铁磁层的主磁极固定部分。 用于主磁极的加热器被构造成包括其中嵌入或设置在主磁极固定部分附近的金属路径的氧化物层和设置在氧化物附近的一对电极 层，用于通过金属路径流动平行于记录介质的表面的电流。 磁场发生器产生磁场，以便在一个方向上引导主磁极的磁化。

公开(公告)号：US20120229936A1

公开(公告)日：2012-09-13

申请号：US13481317

申请日：2012-05-25

Applicant: Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami

Inventor： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami

IPC: G11B5/39 ,  H01L29/82

CPC classification number: G11B5/39 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/325 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a magneto-resistance effect device includes: a multilayer structure having a cap layer; a magnetization pinned layer; a magnetization free layer provided between the cap layer and the magnetization pinned layer; a spacer layer provided between the magnetization pinned layer and the magnetization free layer; a function layer which is provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer, the function layer having oxide containing at least one element selected from Zn, In, Sn and Cd, and at least one element selected from Fe, Co and Ni; and a pair of electrodes for applying a current perpendicularly to a film plane of the multilayer structure.

Abstract translation: 根据一个实施例，磁阻效应器件包括：具有盖层的多层结构; 磁化钉扎层; 设置在所述盖层和所述磁化固定层之间的无磁化层; 设置在磁化固定层和无磁化层之间的间隔层; 设置在磁化被钉扎层，磁化被钉扎层和间隔层之间，在间隔层和无磁化层之间，在磁化自由层中，或在磁化自由层和盖层之间的功能层， 具有含有选自Zn，In，Sn和Cd中的至少一种元素的氧化物的功能层和选自Fe，Co和Ni中的至少一种元素; 以及用于垂直于多层结构的膜平面施加电流的一对电极。

公开(公告)号：US20120212857A1

公开(公告)日：2012-08-23

申请号：US13240062

申请日：2011-09-22

Applicant: Yoshihiko FUJI ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Shuichi Murakami

Inventor： Yoshihiko FUJI ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Shuichi Murakami

IPC: G11B5/48 ,  G11B5/39

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3929 ,  G11B5/3983 ,  G11B2005/3996

Abstract: According to one embodiment, a magneto-resistive effect device includes a stacked body, a pair of electrodes for supplying current in a stacking direction of the stacked body. The stacked body includes a first magnetic layer, a second magnetic layer, and a spacer layer disposed between the first magnetic layer and the second magnetic layer. At least one of the first magnetic layer, the second magnetic layer, and the spacer layer includes an oxide layer formed from a metal oxide. A crystalline structure of the metal oxide is a NaCl structure.

Abstract translation: 根据一个实施例，磁阻效应装置包括层叠体，用于在层叠体的层叠方向上提供电流的一对电极。 层叠体包括设置在第一磁性层和第二磁性层之间的第一磁性层，第二磁性层和间隔层。 第一磁性层，第二磁性层和间隔层中的至少一个包括由金属氧化物形成的氧化物层。 金属氧化物的晶体结构是NaCl结构。

公开(公告)号：US08199443B2

公开(公告)日：2012-06-12

申请号：US12073491

申请日：2008-03-06

Applicant: Junichi Ito ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiro Fuji

Inventor： Junichi Ito ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiro Fuji

IPC: G11B5/39

CPC classification number: G01R33/093 ,  B82Y25/00 ,  G11B5/3932 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

Abstract: A magneto-resistance effect element includes: a first magnetic layer of which a first magnetization is fixed in one direction; a second magnetic layer of which a second magnetization is fixed in one direction; a spacer layer located between the first magnetic layer and the second magnetic layer and made of at least one selected from the group consisting of an oxide, a nitride, an oxynitride and a metal; and a current bias generating portion, which is located adjacent to the spacer layer, for applying a bias magnetic field to the spacer layer.

Abstract translation: 磁阻效应元件包括：在一个方向上固定第一磁化的第一磁性层; 第二磁性层，其在一个方向上固定第二磁化强度; 位于第一磁性层和第二磁性层之间并由选自氧化物，氮化物，氧氮化物和金属中的至少一种构成的间隔层; 以及电位偏置产生部分，其位于与间隔层相邻的位置，用于向间隔层施加偏置磁场。

公开(公告)号：US08199429B2

公开(公告)日：2012-06-12

申请号：US12076440

申请日：2008-03-18

Applicant: Hiromi Yuasa ,  Tomoko Taguchi ,  Hideaki Fukuzawa

Inventor： Hiromi Yuasa ,  Tomoko Taguchi ,  Hideaki Fukuzawa

IPC: G11B5/31 ,  G11B5/465

CPC classification number: G11B5/314 ,  G11B5/02 ,  G11B5/1278 ,  G11B5/3163 ,  G11B2005/0002

Abstract: A magnetic recording head includes: a main magnetic pole containing a ferromagnetic layer; a main magnetic pole-magnetization fixing portion containing an antiferromagnetic layer in contact with at least one side surface of the main magnetic pole; a heater for heating at least the main magnetic pole so that a magnetic interaction between the main magnetic pole and the main magnetic pole-magnetization fixing portion can be decreased; and a magnetic field generator for generating a magnetic field so as to direct a magnetization of the main magnetic pole in one direction.

Abstract translation: 磁记录头包括：含有铁磁层的主磁极; 主磁极固定部，其包含与所述主磁极的至少一个侧面接触的反铁磁层; 用于加热至少主磁极的加热器，使得能够减小主磁极和主磁极固定部之间的磁相互作用; 以及用于产生磁场以引导主磁极在一个方向上的磁化的磁场发生器。

公开(公告)号：US20120129008A1

公开(公告)日：2012-05-24

申请号：US13360143

申请日：2012-01-27

Applicant: Hideaki FUKUZAWA ,  Masahiro TAKASHITA ,  Hiromi YUASA ,  Yoshihiko FUJI ,  Hitoshi IWASAKI

Inventor： Hideaki FUKUZAWA ,  Masahiro TAKASHITA ,  Hiromi YUASA ,  Yoshihiko FUJI ,  Hitoshi IWASAKI

IPC: G11B5/39

CPC classification number: H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3983 ,  G11C11/161 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3281 ,  H01F10/3295 ,  H01L27/224 ,  H01L27/228 ,  H01L43/12 ,  Y10T428/1121

Abstract: A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed.

Abstract translation: 提供了由旋转传递转矩引起的噪声减小的磁阻效应元件，磁阻效应头，磁存储器和磁存储器。 在包括固定磁化层，间隔层和自由磁化层的磁阻效应元件的固定磁化层或自由磁化层中; 设置包含选自Ti，Zr，Nb，Mo，Ru，Rh，Pd，Ag，La，Hf，Ta，W，Re，Os，Ir，Pt和Au中的一种元素的层。

公开(公告)号：US08184408B2

公开(公告)日：2012-05-22

申请号：US12320668

申请日：2009-01-30

Applicant: Shuichi Murakami ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

Inventor： Shuichi Murakami ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

IPC: G11B5/39 ,  H01L29/82

CPC classification number: H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  G11C11/161 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnetization pinned layer or on the magnetization free layer, and a functional layer formed of an oxygen- or nitrogen-containing material and arranged in the magnetization pinned layer, or in the magnetization free layer, and a pair of electrodes which pass a current perpendicularly to a plane of the magnetoresistive film, in which a crystalline orientation plane of the functional layer is different from a crystalline orientation plane of its upper or lower adjacent layer.

Abstract translation: 磁阻元件包括磁阻膜，其包括磁化被钉扎层，磁化自由层，布置在磁化钉扎层和磁化自由层之间的中间层，布置在磁化钉扎层或磁化自由层上的盖层，以及 由含氧或含氮材料形成并布置在磁化固定层中或在无磁化层中的功能层和一对电极，其垂直于磁阻膜的平面通过电流，其中晶体 功能层的取向平面不同于其上部或下部相邻层的结晶取向平面。