Invention Grant
- Patent Title: Magneto-resistance effect element, magnetic head, magnetic recording device and magnetic memory
- Patent Title (中): 磁阻效应元件，磁头，磁记录装置和磁存储器
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Application No.: US12073491Application Date: 2008-03-06
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Publication No.: US08199443B2Publication Date: 2012-06-12
- Inventor: Junichi Ito , Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiro Fuji
- Applicant: Junichi Ito , Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiro Fuji
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Nixon & Vanderhye, P.C.
- Priority: JPP2007-082013 20070327
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
A magneto-resistance effect element includes: a first magnetic layer of which a first magnetization is fixed in one direction; a second magnetic layer of which a second magnetization is fixed in one direction; a spacer layer located between the first magnetic layer and the second magnetic layer and made of at least one selected from the group consisting of an oxide, a nitride, an oxynitride and a metal; and a current bias generating portion, which is located adjacent to the spacer layer, for applying a bias magnetic field to the spacer layer.
Public/Granted literature
- US20080239587A1 Magneto-resistance effect element, magnetic head, magnetic recording device and magnetic memory Public/Granted day:2008-10-02
Information query
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