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    METHOD FOR MANUFACTURING HIGH DENSITY NON-VOLATILE MAGNETIC MEMORY
    1.
    发明申请
    METHOD FOR MANUFACTURING HIGH DENSITY NON-VOLATILE MAGNETIC MEMORY 有权
    制造高密度非挥发性磁记忆的方法

    公开(公告)号：US20130244344A1

    公开(公告)日：2013-09-19

    申请号：US13610587

    申请日：2012-09-11

    Applicant: Roger Klas Malmhall ,  Kimihiro Satoh ,  Jing Zhang ,  Parviz Keshtbod ,  Rajiv Yadav Ranjan

    Inventor： Roger Klas Malmhall ,  Kimihiro Satoh ,  Jing Zhang ,  Parviz Keshtbod ,  Rajiv Yadav Ranjan

    IPC: H01L43/12

    CPC classification number: H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/161 ,  H01L27/228

    Abstract: Methods of fabricating MTJ arrays using two orthogonal line patterning steps are described. Embodiments are described that use a self-aligned double patterning method for one or both orthogonal line patterning steps to achieve dense arrays of MTJs with feature dimensions one half of the minimum photo lithography feature size (F). In one set of embodiments, the materials and thicknesses of the stack of layers that provide the masking function are selected so that after the initial set of mask pads have been patterned, a sequence of etching steps progressively transfers the mask pad shape through the multiple mask layer and down through all of the MTJ cell layers to the form the complete MTJ pillars. In another set of embodiments, the MTJ/BE stack is patterned into parallel lines before the top electrode layer is deposited.

    Abstract translation: 描述了使用两个正交线图案化步骤制造MTJ阵列的方法。 描述了使用用于一个或两个正交线图案化步骤的自对准双图案化方法来实现特征尺寸为最小光刻特征尺寸（F）的一半的MTJ的致密阵列的实施例。 在一组实施例中，选择提供掩模功能的层叠层的材料和厚度，使得在初始掩模焊盘组被图案化之后，一系列蚀刻步骤逐渐地将掩模焊盘形状传递通过多个掩模 通过所有的MTJ单元层的层和下层形成完整的MTJ柱。 在另一组实施例中，在沉积顶部电极层之前，将MTJ / BE叠层图案化成平行线。

    Non-volatile magnetic memory element with graded layer
    2.
    发明授权
    Non-volatile magnetic memory element with graded layer 有权
    带分级层的非易失性磁记忆元件

    公开(公告)号：US08488376B2

    公开(公告)日：2013-07-16

    申请号：US13476879

    申请日：2012-05-21

    Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

    Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

    IPC: G11C11/14

    CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/303 ,  H01L27/228 ,  H01L43/08

    Abstract: A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.

    Abstract translation: 非易失性磁存储元件包括多个层，其中之一是分级的自由层。 分级自由层可以包括各种元素，其中每个元素具有不同的各向异性，或者其可以包括非磁性化合物和磁性区域，其中非磁性化合物形成梯度含量形成独特的形状，例如锥形，菱形或其它形状，并且其厚度 是基于磁性化合物的反应性。

    NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER
    4.
    发明申请
    NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER 有权
    具有分级层的非易失性磁记忆元件

    公开(公告)号：US20130087870A1

    公开(公告)日：2013-04-11

    申请号：US13476904

    申请日：2012-05-21

    Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

    Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

    IPC: H01L29/82

    CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/303 ,  H01L27/228 ,  H01L43/08

    Abstract: A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.

    Abstract translation: 非易失性磁存储元件包括多个层，其中之一是分级的自由层。 分级自由层可以包括各种元素，其中每个元素具有不同的各向异性，或者其可以包括非磁性化合物和磁性区域，其中非磁性化合物形成梯度含量形成独特的形状，例如锥形，菱形或其它形状，并且其厚度 是基于磁性化合物的反应性。

    LOW COST MULTI-STATE MAGNETIC MEMORY
    5.
    发明申请
    LOW COST MULTI-STATE MAGNETIC MEMORY 有权
    低成本多状态磁记忆

    公开(公告)号：US20110305078A1

    公开(公告)日：2011-12-15

    申请号：US13216997

    申请日：2011-08-24

    Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

    Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

    IPC: G11C11/14 ,  H01L29/82

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/5607

    Abstract: A multi-state current-switching magnetic memory element has a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current is applied to the memory element, the applied current causes the non-uniform free layer of the MTJ to switch to one of four different magnetic states. The broad switching current distribution of the MTJ is a result of the broad grain size distribution of the non-uniform free layer.

    Abstract translation: 多状态电流切换磁存储元件具有磁隧道结（MTJ），用于存储多于一位的信息。 MTJ包括固定层，阻挡层和不均匀的自由层。 在一个实施例中，当每个单元具有2位时，当四个不同电平的电流之一被施加到存储元件时，所施加的电流使MTJ的非均匀自由层切换到四个不同的磁状态之一。 MTJ的宽开关电流分布是非均匀自由层的宽晶粒尺寸分布的结果。

    Low cost multi-state magnetic memory
    6.
    发明授权
    Low cost multi-state magnetic memory 有权
    低成本多状态磁存储器

    公开(公告)号：US08018011B2

    公开(公告)日：2011-09-13

    申请号：US11860467

    申请日：2007-09-24

    Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

    Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

    IPC: H01L29/82 ,  G11C11/00

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/5607

    Abstract: A multi-state current-switching magnetic memory element has a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current is applied to the memory element, the applied current causes the non-uniform free layer of the MTJ to switch to one of four different magnetic states. The broad switching current distribution of the MTJ is a result of the broad grain size distribution of the non-uniform free layer.

    Abstract translation: 多状态电流切换磁存储元件具有磁隧道结（MTJ），用于存储多于一位的信息。 MTJ包括固定层，阻挡层和不均匀的自由层。 在一个实施例中，当每个单元具有2位时，当四个不同电平的电流之一被施加到存储元件时，所施加的电流使MTJ的非均匀自由层切换到四个不同的磁状态之一。 MTJ的宽开关电流分布是非均匀自由层的宽晶粒尺寸分布的结果。

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