Invention Application
- Patent Title: NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER
- Patent Title (中): 具有分级层的非易失性磁记忆元件
-
Application No.: US13476904Application Date: 2012-05-21
-
Publication No.: US20130087870A1Publication Date: 2013-04-11
- Inventor: Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
- Applicant: Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
- Applicant Address: US CA Fremont
- Assignee: AVALANCHE TECHNOLOGY, INC.
- Current Assignee: AVALANCHE TECHNOLOGY, INC.
- Current Assignee Address: US CA Fremont
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.
Public/Granted literature
- US08493780B2 Non-volatile magnetic memory element with graded layer Public/Granted day:2013-07-23
Information query
IPC分类:
