Invention Grant
- Patent Title: Non-volatile magnetic memory element with graded layer
- Patent Title (中): 带分级层的非易失性磁记忆元件
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Application No.: US13476879Application Date: 2012-05-21
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Publication No.: US08488376B2Publication Date: 2013-07-16
- Inventor: Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
- Applicant: Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
- Applicant Address: US CA Fremont
- Assignee: Avalanche Technology, Inc.
- Current Assignee: Avalanche Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agency: IPxLAW Group LLP
- Agent Maryam Imam
- Main IPC: G11C11/14
- IPC: G11C11/14
Abstract:
A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.
Public/Granted literature
- US20120230095A1 NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER Public/Granted day:2012-09-13
Information query
