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    METHOD FOR MAKING A TUNNELING MAGNETORESISTIVE (TMR) SENSOR
    1.
    发明申请
    METHOD FOR MAKING A TUNNELING MAGNETORESISTIVE (TMR) SENSOR 有权
    制造隧道磁传感器（TMR）传感器的方法

    公开(公告)号：US20140313617A1

    公开(公告)日：2014-10-23

    申请号：US13869005

    申请日：2013-04-23

    Applicant: HGST NETHERLANDS B.V.

    Inventor： Jordan Asher Katine

    IPC: G11B5/39 ,  G11B5/84

    CPC classification number: G11B5/3932 ,  G11B5/3163 ,  G11B5/3909 ,  G11B5/398 ,  G11B5/8404 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T428/1114

    Abstract: A tunneling magnetoresistive sensor has an extended pinned layer wherein both the MgO spacer layer and the underlying ferromagnetic pinned layer extend beyond the back edge of the ferromagnetic free layer in the stripe height direction and optionally also beyond the side edges of the free layer in the trackwidth direction. A patterned photoresist layer with a back edge is formed on the sensor stack and a methanol (CH3OH)-based reactive ion etching (RIE) removes the unprotected free layer, defining the free layer back edge. The methanol-based RIE terminates at the MgO spacer layer without damaging the underlying reference layer. A second patterned photoresist layer may be deposited and a second methanol-based RIE may be performed if it is desired to have the reference layer also extend beyond the side edges of the free layer in the trackwidth direction.

    Abstract translation: 隧道磁阻传感器具有延伸的钉扎层，其中MgO间隔层和下面的铁磁性钉扎层都延伸超过铁磁自由层在条带高度方向上的后边缘，并且可选地还可以超过轨道宽度中的自由层的侧边缘 方向。 在传感器堆叠上形成具有后边缘的图案化光致抗蚀剂层，并且基于甲醇（CH 3 OH）的反应离子蚀刻（RIE）去除限定自由层后边缘的未保护的自由层。 基于甲醇的RIE终止于MgO间隔层，而不损坏下面的参考层。 可以沉积第二图案化的光致抗蚀剂层，并且如果希望参考层也延伸超过自由层的沿着带宽方向的侧边缘，则可以执行第二基于甲醇的RIE。

    Method of manufacturing a CPP structure with enhanced GMR ratio
    2.
    发明授权
    Method of manufacturing a CPP structure with enhanced GMR ratio 有权
    制造具有增强的GMR比的CPP结构的方法

    公开(公告)号：US08484830B2

    公开(公告)日：2013-07-16

    申请号：US13065966

    申请日：2011-04-04

    Applicant: Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng

    Inventor： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng

    IPC: G11B5/187 ,  G11B5/23

    CPC classification number: H01L43/08 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3281 ,  H01F10/3295 ,  H01F41/18 ,  H01F41/303 ,  H01L43/10 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T428/1114 ,  Y10T428/1129 ,  Y10T428/115

    Abstract: A CPP-GMR spin valve having a CoFe/NiFe composite free layer is disclosed in which Fe content of the CoFe layer ranges from 20 to 70 atomic % and Ni content in the NiFe layer varies, from 85 to 100 atomic % to maintain low Hc and λs values. A small positive magnetostriction value in a Co75Fe25 layer is used to offset a negative magnetostriction value in a Ni90Fe10layer. The CoFe layer is deposited on a sensor stack in which a seed layer, AFM layer, pinned layer, and non-magnetic spacer layer are sequentially formed on a substrate. After a NiFe layer and capping layer are sequentially deposited on the CoFe layer, the sensor stack is patterned to give a sensor element with top and bottom surfaces and a sidewall connecting the top and bottom surfaces. Thereafter, a dielectric layer is formed adjacent to the sidewalls.

    Abstract translation: 公开了一种具有CoFe / NiFe复合自由层的CPP-GMR自旋阀，其中CoFe层的Fe含量为20〜70原子％，NiFe层中的Ni含量为85〜100原子％，保持低Hc 和lambdas值。 使用Co75Fe25层中的小的正磁致伸缩值来抵消Ni90Fe10层中的负磁致伸缩值。 CoFe层沉积在传感器堆叠上，其中种子层，AFM层，钉扎层和非磁性间隔层依次形成在基底上。 在NiFe层和覆盖层顺序地沉积在CoFe层上之后，传感器堆叠被图案化以给出具有顶表面和底表面的传感器元件以及连接顶表面和底表面的侧壁。 此后，与侧壁相邻地形成电介质层。

    Forming a planarized surface for at least one bar of sliders
    5.
    发明授权
    Forming a planarized surface for at least one bar of sliders 有权
    形成用于至少一个滑块的平坦化表面

    公开(公告)号：US08220136B2

    公开(公告)日：2012-07-17

    申请号：US11800127

    申请日：2007-05-03

    Applicant: Cherngye Hwang ,  Jorge Goitia ,  Kenneth L. Larson ,  Dennis R. McKean

    Inventor： Cherngye Hwang ,  Jorge Goitia ,  Kenneth L. Larson ,  Dennis R. McKean

    IPC: G11B5/127 ,  H04R31/00

    CPC classification number: G11B5/4853 ,  G11B5/102 ,  G11B5/3163 ,  G11B5/3173 ,  Y10T29/49027 ,  Y10T29/49039 ,  Y10T29/49041 ,  Y10T29/49055 ,  Y10T29/53165 ,  Y10T156/10

    Abstract: A method for forming a planarized surface for at least one bar of sliders for utilization in a hard disk drive is disclosed. In general, at least one bar of sliders is placed on an adhesive layer. A single thermoplastic layer is then provided above the at least one bar of sliders. The single thermoplastic layer is then heated to a softening temperature such that the single thermoplastic layer will flow between the at least one bar of sliders. The single thermoplastic layer is then cooled to form a planarized surface of both said single thermoplastic layer and said at least one bar of sliders at said adhesive layer.

    Abstract translation: 公开了一种用于形成至少一个用于硬盘驱动器的滑块的平面化表面的方法。 通常，将至少一个滑杆放置在粘合剂层上。 然后在至少一个滑杆上方设置单个热塑性层。 然后将单个热塑性层加热到软化温度，使得单个热塑性层将在至少一个滑块之间流动。 然后将单个热塑性层冷却以在所述粘合剂层处形成所述单一热塑性层和所述至少一个滑块条的平坦化表面。

    Method of forming magnetic layer pattern, and method of manufacturing perpendicular magnetic recording head
    6.
    发明授权
    Method of forming magnetic layer pattern, and method of manufacturing perpendicular magnetic recording head 有权
    形成磁性层图案的方法以及制造垂直磁记录头的方法

    公开(公告)号：US08201321B2

    公开(公告)日：2012-06-19

    申请号：US12926817

    申请日：2010-12-10

    Applicant: Naoto Matono ,  Tatsuya Harada

    Inventor： Naoto Matono ,  Tatsuya Harada

    IPC: G11B5/17 ,  H04R31/00

    CPC classification number: G11B5/3163 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/3967 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    Abstract: Provided is a method of manufacturing a perpendicular magnetic recording head which can enhance accuracy and simplify the manufacturing process. The method includes: forming a photoresist pattern having an opening part; forming a non-magnetic layer so as to narrow the opening part by a dry film forming method such as ALD method; stacking a seed layer and a plating layer so as to bury the opening part provided with the non-magnetic layer; and forming a main magnetic pole layer by polishing the non-magnetic layer, the seed layer, and the plating layer by CMP method until the photoresist pattern is exposed. The final opening width is unsusceptible to variations, thus reducing the number of the steps of forming the main magnetic layer.

    Abstract translation: 提供一种可提高精度并简化制造过程的垂直磁记录头的制造方法。 该方法包括：形成具有开口部分的光致抗蚀剂图案; 通过诸如ALD法的干膜形成方法形成非磁性层以使开口部分变窄; 堆叠种子层和镀层以便掩埋设置有非磁性层的开口部分; 以及通过CMP方法研磨非磁性层，种子层和镀层，形成主磁极层，直到光刻胶图案露出为止。 最终的开口宽度对于变化是不可察觉的，因此减少了形成主磁性层的步骤的数量。

    Method of manufacturing a magnetic head with reinforcing islands
    7.
    发明授权
    Method of manufacturing a magnetic head with reinforcing islands 失效
    制造具有加强岛的磁头的方法

    公开(公告)号：US08191234B2

    公开(公告)日：2012-06-05

    申请号：US12184357

    申请日：2008-08-01

    Applicant: Robert G. Biskeborn ,  Calvin S. Lo ,  Cherngye Hwang

    Inventor： Robert G. Biskeborn ,  Calvin S. Lo ,  Cherngye Hwang

    IPC: G11B5/23 ,  B44C1/22

    CPC classification number: G11B5/3106 ,  G11B5/3163 ,  G11B5/3169 ,  Y10T29/49039 ,  Y10T29/49041 ,  Y10T29/49048

    Abstract: A method for protecting a thin film structure including fabricating a plurality of island structures in a recording gap of a magnetic recording head, exposing a substantial portion of the plurality of island structures by removing at least a portion of the surrounding recording gap material via at least one etching process, including ion milling, coating the magnetic recording head containing the plurality of island structures with a coating material, including silicon nitride or aluminum oxide, and removing at least a portion of the coating material via a removal process, including chemical-mechanical polishing or lapping, to expose an uppermost region of at least a portion of said plurality of island structures.

    Abstract translation: 一种用于保护薄膜结构的方法，包括在磁记录头的记录间隙中制造多个岛状结构，通过至少除去周围的记录间隙材料的至少一部分而暴露多个岛结构的大部分 一个蚀刻工艺，包括离子铣削，用包括氮化硅或氧化铝的涂层材料涂覆包含多个岛状结构的磁记录头，以及通过去除工艺去除至少一部分涂层材料，包括化学机械 抛光或研磨，以暴露所述多个岛结构的至少一部分的最上部区域。

    Method for providing a perpendicular magnetic recording (PMR) transducer
    8.
    发明授权
    Method for providing a perpendicular magnetic recording (PMR) transducer 有权
    提供垂直磁记录（PMR）传感器的方法

    公开(公告)号：US08146236B1

    公开(公告)日：2012-04-03

    申请号：US12057692

    申请日：2008-03-28

    Applicant: Guanghong Luo ,  Liubo Hong ,  Honglin Zhu ,  Yun-Fei Li ,  Yingjian Chen

    Inventor： Guanghong Luo ,  Liubo Hong ,  Honglin Zhu ,  Yun-Fei Li ,  Yingjian Chen

    IPC: G11B5/127 ,  H04R31/00

    CPC classification number: G11B5/3116 ,  G11B5/1278 ,  G11B5/3163 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    Abstract: A method and system for providing a perpendicular magnetic recording (PMR) transducer from pole layer(s) are disclosed. First and second planarization stop layers are provided on the pole layer(s). A mask is provided on the second planarization stop layer. A first portion of the mask resides on a portion of the pole layer(s) used to form the PMR pole. The PMR pole is defined after the mask is provided. An intermediate layer surrounding at least the PMR pole is provided. A first planarization is performed on at least the intermediate layer. A portion of the second planarization stop layer is removed during the first planarization. A remaining portion of the second planarization stop layer is removed. A second planarization is performed. A portion of the first planarization stop layer remains after the second planarization. A write gap and shield are provided on the PMR pole and write gap, respectively.

    Abstract translation: 公开了一种用于从极层提供垂直磁记录（PMR）换能器的方法和系统。 第一和第二平坦化停止层设置在极层上。 在第二平坦化停止层上设置掩模。 掩模的第一部分位于用于形成PMR极的极层的一部分上。 在提供面罩之后定义PMR极。 提供至少围绕PMR极的中间层。 至少在中间层上执行第一平面化。 在第一平坦化期间，去除第二平坦化停止层的一部分。 去除第二平坦化停止层的剩余部分。 执行第二平面化。 在第二平面化之后，第一平坦化停止层的一部分保留。 分别在PMR极和写间隙上提供写间隙和屏蔽。

    Novel CPP device with an enhanced dR/R ratio
    9.
    发明申请
    Novel CPP device with an enhanced dR/R ratio 审中-公开
    具有增强的dR / R比的新型CPP装置

    公开(公告)号：US20120009337A1

    公开(公告)日：2012-01-12

    申请号：US13200013

    申请日：2011-09-15

    Applicant: Kunliang Zhang ,  Min Li ,  Moris Dovek ,  Yue Liu

    Inventor： Kunliang Zhang ,  Min Li ,  Moris Dovek ,  Yue Liu

    IPC: G11B5/31 ,  C23C14/34

    CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044

    Abstract: A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a M/S, S/M, M/S/M, S/M/S, M/S/M/S/M, or a multilayer (M/S/M)n configuration where n is an integer≧1. The pinned layer preferably has an AP2/coupling/AP1 configuration wherein the AP2 portion is a FCC trilayer represented by CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where y is 0 to 60 atomic %, and z is 75 to 100 atomic %. In one embodiment, M is Cu with a thickness from 0.5 to 50 Angstroms and S is ZnO with a thickness of 1 to 50 Angstroms. The S layer may be doped with one or more elements. The dR/R ratio of the spin valve is increased to 10% or greater while maintaining acceptable EM and RA performance.

    Abstract translation: 公开了具有由至少一个金属（M）层和至少一个半导体或半金属（S）层组成的复合间隔层的CPP-GMR自旋阀。 复合间隔物可以具有M / S，S / M，M / S / M，S / M / S，M / S / M / S / M或多层（M / S / M） 是整数≧1。 钉扎层优选具有AP2 /耦合/ AP1配置，其中AP2部分是由CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z）表示的FCC三层，其中y为0至60原子％ ，z为75〜100原子％。 在一个实施方案中，M是厚度为0.5至50埃的Cu，S是厚度为1至50埃的ZnO。 S层可以掺杂有一个或多个元素。 自旋阀的dR / R比提高到10％以上，同时保持可接受的EM和RA性能。

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