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    Method of manufacturing a CPP structure with enhanced GMR ratio
    1.
    发明授权
    Method of manufacturing a CPP structure with enhanced GMR ratio 有权
    制造具有增强的GMR比的CPP结构的方法

    公开(公告)号：US07918014B2

    公开(公告)日：2011-04-05

    申请号：US11180808

    申请日：2005-07-13

    Applicant: Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng

    Inventor： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng

    IPC: G11B5/187 ,  C23C14/34

    CPC classification number: H01L43/08 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3281 ,  H01F10/3295 ,  H01F41/18 ,  H01F41/303 ,  H01L43/10 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T428/1114 ,  Y10T428/1129 ,  Y10T428/115

    Abstract: A CPP-GMR spin valve having a CoFe/NiFe composite free layer is disclosed in which Fe content of the CoFe layer ranges from 20 to 70 atomic % and Ni content in the NiFe layer varies from 85 to 100 atomic % to maintain low Hc and λS values. A small positive magnetostriction value in a Co75Fe25 layer is used to offset a negative magnetostriction value in a Ni90Fe10 layer. The CoFe layer is deposited on a sensor stack in which a seed layer, AFM layer, pinned layer, and non-magnetic spacer layer are sequentially formed on a substrate. After a NiFe layer and capping layer are sequentially deposited on the CoFe layer, the sensor stack is patterned to give a sensor element with top and bottom surfaces and a sidewall connecting the top and bottom surfaces. Thereafter, a dielectric layer is formed adjacent to the sidewalls.

    Abstract translation: 公开了一种具有CoFe / NiFe复合自由层的CPP-GMR自旋阀，其中CoFe层的Fe含量为20〜70原子％，NiFe层的Ni含量为85〜100原子％，保持低Hc， λS值。 使用Co75Fe25层中的小的正磁致伸缩值来抵消Ni90Fe10层中的负磁致伸缩值。 CoFe层沉积在传感器堆叠上，其中种子层，AFM层，钉扎层和非磁性间隔层依次形成在基底上。 在NiFe层和覆盖层顺序地沉积在CoFe层上之后，传感器堆叠被图案化以给出具有顶表面和底表面的传感器元件以及连接顶表面和底表面的侧壁。 此后，与侧壁相邻地形成电介质层。

    FCC-like trilayer AP2 structure for CPP GMR EM improvement
    2.
    发明申请
    FCC-like trilayer AP2 structure for CPP GMR EM improvement 有权
    FCC类三层AP2结构，用于CPP GMR EM改进

    公开(公告)号：US20090314632A1

    公开(公告)日：2009-12-24

    申请号：US12583742

    申请日：2009-08-25

    Applicant: Kunliang Zhang ,  Dan Abels ,  Min Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Yu-Hsia Chen

    Inventor： Kunliang Zhang ,  Dan Abels ,  Min Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Yu-Hsia Chen

    IPC: C23C14/34 ,  B05D5/12

    CPC classification number: H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/16 ,  H01F10/3236 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/302

    Abstract: A method of forming a CPP-GMR spin valve having a pinned layer with an AP2/coupling/AP1 configuration is disclosed wherein the AP2 portion is a FCC-like trilayer having a composition represented by CoZFe(100-Z)/Fe(100-X)TaX/CoZFe(100-Z) or CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where x is 3 to 30 atomic %, y is 40 to 100 atomic %, and z is 75 to 100 atomic %. Preferably, z is 90 to provide a face centered cubic structure that minimizes electromigration. Optionally, the middle layer is comprised of an Fe rich alloy such as FeCr, FeV, FeW, FeZr, FeNb, FeHf, or FeMo. EM performance is improved significantly compared to a spin valve with a conventional AP2 Co50Fe50 or Co75Fe25 single layer. MR ratio is also increased and RA is maintained at an acceptable level. The coupling layer is preferably Ru and the AP1 layer may be comprised of a lamination of CoFe and Cu layers as in [CoFe/Cu]2/CoFe.

    Abstract translation: 公开了一种形成具有AP2 /偶联/ AP1构型的钉扎层的CPP-GMR自旋阀的方法，其中AP2部分是具有由CoZFe（100-Z）/ Fe（100-Z）/ Fe X）TaX / CoZFe（100-Z）或CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z），其中x为3至30原子％，y为40至100原子％ 为75〜100原子％。 优选地，z为90以提供使电迁移最小化的面心立方结构。 任选地，中间层由富Fe合金如FeCr，FeV，FeW，FeZr，FeNb，FeHf或FeMo组成。 与具有常规AP2 Co50Fe50或Co75Fe25单层的自旋阀相比，EM性能显着提高。 MR比也增加，RA维持在可接受的水平。 耦合层优选为Ru，并且AP1层可以由如[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成。

    FCC-like trilayer AP2 structure for CPP GMR EM improvement
    3.
    发明授权
    FCC-like trilayer AP2 structure for CPP GMR EM improvement 有权
    FCC类三层AP2结构，用于CPP GMR EM改进

    公开(公告)号：US07583481B2

    公开(公告)日：2009-09-01

    申请号：US11234719

    申请日：2005-09-23

    Applicant: Kunliang Zhang ,  Dan Abels ,  Min Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Yu-Hsia Chen

    Inventor： Kunliang Zhang ,  Dan Abels ,  Min Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Yu-Hsia Chen

    IPC: G11B5/33 ,  G11B5/127

    CPC classification number: H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/16 ,  H01F10/3236 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/302

    Abstract: A CPP-GMR spin valve having a pinned layer with an AP2/coupling/AP1 configuration is disclosed wherein the AP2 portion is a FCC-like trilayer having a composition represented by CoZFe(100-Z)/Fe(100-X)TaX/CoZFe(100-Z) or CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where x is 3 to 30 atomic %, y is 40 to 100 atomic %, and z is 75 to 100 atomic %. Preferably, z is 90 to provide a face centered cubic structure that minimizes electromigration. Optionally, the middle layer is comprised of an Fe rich alloy such as FeCr, FeV, FeW, FeZr, FeNb, FeHf, or FeMo. EM performance is improved significantly compared to a spin valve with a conventional AP2 Co50Fe5 or Co75Fe25 single layer. The MR ratio of the spin valve is also increased and the RA is maintained at an acceptable level. The coupling layer is preferably Ru and the AP1 layer may be comprised of a lamination of CoFe and Cu layers as in [CoFe/Cu]2/CoFe.

    Abstract translation: 公开了具有AP2 /耦合/ AP1构型的钉扎层的CPP-GMR自旋阀，其中AP2部分是具有由CoZFe（100-Z）/ Fe（100-X）TaX / CoZFe（100-Z）或CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z），其中x为3至30原子％，y为40至100原子％，z为75至100 原子％。 优选地，z为90以提供使电迁移最小化的面心立方结构。 任选地，中间层由富Fe合金如FeCr，FeV，FeW，FeZr，FeNb，FeHf或FeMo组成。 与使用常规AP2 Co50Fe5或Co75Fe25单层的自旋阀相比，EM性能显着提高。 自旋阀的MR比也增加，RA保持在可接受的水平。 耦合层优选为Ru，并且AP1层可以由如[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成。

    Method of manufacturing a CPP structure with enhanced GMR ratio
    4.
    发明授权
    Method of manufacturing a CPP structure with enhanced GMR ratio 有权
    制造具有增强的GMR比的CPP结构的方法

    公开(公告)号：US08484830B2

    公开(公告)日：2013-07-16

    申请号：US13065966

    申请日：2011-04-04

    Applicant: Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng

    Inventor： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng

    IPC: G11B5/187 ,  G11B5/23

    CPC classification number: H01L43/08 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3281 ,  H01F10/3295 ,  H01F41/18 ,  H01F41/303 ,  H01L43/10 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T428/1114 ,  Y10T428/1129 ,  Y10T428/115

    Abstract: A CPP-GMR spin valve having a CoFe/NiFe composite free layer is disclosed in which Fe content of the CoFe layer ranges from 20 to 70 atomic % and Ni content in the NiFe layer varies, from 85 to 100 atomic % to maintain low Hc and λs values. A small positive magnetostriction value in a Co75Fe25 layer is used to offset a negative magnetostriction value in a Ni90Fe10layer. The CoFe layer is deposited on a sensor stack in which a seed layer, AFM layer, pinned layer, and non-magnetic spacer layer are sequentially formed on a substrate. After a NiFe layer and capping layer are sequentially deposited on the CoFe layer, the sensor stack is patterned to give a sensor element with top and bottom surfaces and a sidewall connecting the top and bottom surfaces. Thereafter, a dielectric layer is formed adjacent to the sidewalls.

    Abstract translation: 公开了一种具有CoFe / NiFe复合自由层的CPP-GMR自旋阀，其中CoFe层的Fe含量为20〜70原子％，NiFe层中的Ni含量为85〜100原子％，保持低Hc 和lambdas值。 使用Co75Fe25层中的小的正磁致伸缩值来抵消Ni90Fe10层中的负磁致伸缩值。 CoFe层沉积在传感器堆叠上，其中种子层，AFM层，钉扎层和非磁性间隔层依次形成在基底上。 在NiFe层和覆盖层顺序地沉积在CoFe层上之后，传感器堆叠被图案化以给出具有顶表面和底表面的传感器元件以及连接顶表面和底表面的侧壁。 此后，与侧壁相邻地形成电介质层。

    FCC-like trilayer AP2 structure for CPP GMR EM improvement
    5.
    发明授权
    FCC-like trilayer AP2 structure for CPP GMR EM improvement 有权
    FCC类三层AP2结构，用于CPP GMR EM改进

    公开(公告)号：US08012316B2

    公开(公告)日：2011-09-06

    申请号：US12583742

    申请日：2009-08-25

    Applicant: Kunliang Zhang ,  Dan Abels ,  Min Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Yu-Hsia Chen

    Inventor： Kunliang Zhang ,  Dan Abels ,  Min Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Yu-Hsia Chen

    IPC: C23C14/14

    CPC classification number: H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/16 ,  H01F10/3236 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/302

    Abstract: A method of forming a CPP-GMR spin valve having a pinned layer with an AP2/coupling/AP1 configuration is disclosed wherein the AP2 portion is a FCC-like trilayer having a composition represented by CoZFe(100-Z)/Fe(100-X)TaX/CoZFe(100-Z) or CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where x is 3 to 30 atomic %, y is 40 to 100 atomic %, and z is 75 to 100 atomic %. Preferably, z is 90 to provide a face centered cubic structure that minimizes electromigration. Optionally, the middle layer is comprised of an Fe rich alloy such as FeCr, FeV, FeW, FeZr, FeNb, FeHf, or FeMo. EM performance is improved significantly compared to a spin valve with a conventional AP2 Co50Fe50 or Co75Fe25 single layer. MR ratio is also increased and RA is maintained at an acceptable level. The coupling layer is preferably Ru and the AP1 layer may be comprised of a lamination of CoFe and Cu layers as in [CoFe/Cu]2/CoFe.

    Abstract translation: 公开了一种形成具有AP2 /偶联/ AP1构型的钉扎层的CPP-GMR自旋阀的方法，其中AP2部分是具有由CoZFe（100-Z）/ Fe（100-Z）/ Fe X）TaX / CoZFe（100-Z）或CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z），其中x为3至30原子％，y为40至100原子％ 为75〜100原子％。 优选地，z为90以提供使电迁移最小化的面心立方结构。 任选地，中间层由富Fe合金如FeCr，FeV，FeW，FeZr，FeNb，FeHf或FeMo组成。 与具有常规AP2 Co50Fe50或Co75Fe25单层的自旋阀相比，EM性能显着提高。 MR比也增加，RA维持在可接受的水平。 耦合层优选为Ru，并且AP1层可以由如[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成。

    FCC-like trilayer AP2 structure for CPP GMR EM improvement
    8.
    发明申请
    FCC-like trilayer AP2 structure for CPP GMR EM improvement 有权
    FCC类三层AP2结构，用于CPP GMR EM改进

    公开(公告)号：US20070070556A1

    公开(公告)日：2007-03-29

    申请号：US11234719

    申请日：2005-09-23

    Applicant: Kunliang Zhang ,  Dan Abels ,  Min Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Yu-Hsia Chen

    Inventor： Kunliang Zhang ,  Dan Abels ,  Min Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Yu-Hsia Chen

    IPC: G11B5/127 ,  G11B5/33

    CPC classification number: H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/16 ,  H01F10/3236 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/302

    Abstract: A CPP-GMR spin valve having a pinned layer with an AP2/coupling/AP1 configuration is disclosed wherein the AP2 portion is a FCC-like trilayer having a composition represented by CoZFe(100-Z)/Fe(100-X)TaX/CoZFe(100-Z) or CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where x is 3 to 30 atomic %, y is 40 to 100 atomic %, and z is 75 to 100 atomic %. Preferably, z is 90 to provide a face centered cubic structure that minimizes electromigration. Optionally, the middle layer is comprised of an Fe rich alloy such as FeCr, FeV, FeW, FeZr, FeNb, FeHf, or FeMo. EM performance is improved significantly compared to a spin valve with a conventional AP2 Co50Fe5 or Co75Fe25 single layer. The MR ratio of the spin valve is also increased and the RA is maintained at an acceptable level. The coupling layer is preferably Ru and the AP1 layer may be comprised of a lamination of CoFe and Cu layers as in [CoFe/Cu]2/CoFe.

    Abstract translation: 公开了一种具有AP2 /耦合/ AP1构型的钉扎层的CPP-GMR自旋阀，其中AP2部分是具有由Co＆lt; Z＆gt; Fe（100）表示的组成的FCC状三层 -Z）/ Fe（100-X）Ta x / Co Z（Fe）（100-Z）单层。 自旋阀的MR比也增加，RA保持在可接受的水平。 耦合层优选为Ru，并且AP1层可以由如[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成。

    Ta based bilayer seed for IrMn CPP spin valve
    9.
    发明申请
    Ta based bilayer seed for IrMn CPP spin valve 有权
    用于IrMn CPP自旋阀的Ta基双层种子

    公开(公告)号：US20060164765A1

    公开(公告)日：2006-07-27

    申请号：US11043624

    申请日：2005-01-26

    Applicant: Min Li ,  Kunliang Zhang ,  Chyu-Jiuh Torng ,  Yu-Hsia Chen

    Inventor： Min Li ,  Kunliang Zhang ,  Chyu-Jiuh Torng ,  Yu-Hsia Chen

    IPC: G11B5/33 ,  G11B5/127

    CPC classification number: G11B5/39

    Abstract: The effectiveness of an IrMn pinning layer in a CPP GMR device at high switching fields has been improved by replacing the conventional single layer seed by a layer of tantalum and either ruthenium or copper. The tantalum serves to cancel out the crystallographic influence of underlying layers while the ruthenium or copper provide a suitable base on which to grow the IrMn layer.

    Abstract translation: 通过用钽和钌或铜替代传统的单层种子，在高开关场中的CPP GMR器件中的IrMn钉扎层的有效性得到改善。 钽用于抵消下层的结晶影响，而钌或铜提供合适的碱以生长IrMn层。

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