公开(公告)号：US08289661B2

公开(公告)日：2012-10-16

申请号：US13065975

申请日：2011-04-04

Applicant: Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng

Inventor： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng

IPC: G11B5/127

CPC classification number: H01L43/08 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3281 ,  H01F10/3295 ,  H01F41/18 ,  H01F41/303 ,  H01L43/10 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T428/1114 ,  Y10T428/1129 ,  Y10T428/115

Abstract: A CPP-GMR spin valve having a CoFe/NiFe composite free layer is disclosed in which Fe content of the CoFe layer ranges from 20 to 70 atomic % and Ni content in the NiFe layer varies from 85 to 100 atomic % to maintain low Hc and λS values. A higher than normal Fe content in the CoFe layer improves the MR ratio by ≧16% compared with conventional CoFe/NiFe free layers in which the Fe content in CoFe is typically

Abstract translation: 公开了一种具有CoFe / NiFe复合自由层的CPP-GMR自旋阀，其中CoFe层的Fe含量为20〜70原子％，NiFe层的Ni含量为85〜100原子％，保持低Hc， λS值。 与FeFe中的Fe含量通常<20原子％，NiFe中的Ni含量<85原子％的常规CoFe / NiFe自由层相比，CoFe层中高于正常Fe含量使MR比提高了16％ 。 CPP-GMR性能也可以通过在被钉扎层和自由层之间的铜间隔物中结合约束电流通路层来优化。 对于具有AP2 / Ru / AP1配置的钉扎层，通过由[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成的AP1层来进一步提高自旋阀性能。

公开(公告)号：US08008740B2

公开(公告)日：2011-08-30

申请号：US12586523

申请日：2009-09-23

Applicant: Tong Zhao ,  Hui-Chuan Wang ,  Kunliang Zhang ,  Yu-Hsia Chen ,  Min Li

Inventor： Tong Zhao ,  Hui-Chuan Wang ,  Kunliang Zhang ,  Yu-Hsia Chen ,  Min Li

IPC: H01L43/00

CPC classification number: H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/12

Abstract: A high performance TMR sensor is fabricated by employing a composite inner pinned (AP1) layer in an AP2/Ru/AP1 pinned layer configuration. In one embodiment, there is a 10 to 80 Angstrom thick lower CoFeB or CoFeB alloy layer on the Ru coupling layer, a and 5 to 50 Angstrom thick Fe or Fe alloy layer on the CoFeB or CoFeB alloy, and a 5 to 30 Angstrom thick Co or Co rich alloy layer formed on the Fe or Fe alloy. A MR ratio of about 48% with a RA of

Abstract translation: 通过在AP2 / Ru / AP1钉扎层配置中采用复合内固定（AP1）层制造高性能TMR传感器。 在一个实施例中，Ru结合层上存在10至80埃厚的CoFeB或CoFeB合金层，CoFeB或CoFeB合金上为5至50埃厚的Fe或Fe合金层，厚度为5至30埃 在Fe或Fe合金上形成Co或Co丰富的合金层。 当在TMR堆叠中使用CoFe AP2层，MgO（NOX）隧道势垒和CoFe / NiFe自由层时，实现约48％的RA比为<2欧姆 - um2的MR比。 观察到改善的RA均匀性和较少的头噪声。 可选地，可以在耦合层和CoFeB或CoFeB合金层之间插入CoFe层以改善钉扎强度并增强结晶。

公开(公告)号：US07990660B2

公开(公告)日：2011-08-02

申请号：US12930756

申请日：2011-01-14

Applicant: Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen

Inventor： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen

IPC: G11B5/127

CPC classification number: G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/3983 ,  Y10T428/1121

Abstract: An improved CPP magnetic read device whose oxide barrier comprises at least two separate CCP layers is disclosed. These two CCP layers differ in the PIT and IAO treatments that they received relative to the PIT/IAO treatment that would be used when only a single CCP layer is formed.

公开(公告)号：US20110183158A1

公开(公告)日：2011-07-28

申请号：US13065975

申请日：2011-04-04

Applicant: Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng

Inventor： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng

IPC: G11B5/39

CPC classification number: H01L43/08 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3281 ,  H01F10/3295 ,  H01F41/18 ,  H01F41/303 ,  H01L43/10 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T428/1114 ,  Y10T428/1129 ,  Y10T428/115

Abstract: A CPP-GMR spin valve having a CoFe/NiFe composite free layer is disclosed in which Fe content of the CoFe layer ranges from 20 to 70 atomic % and Ni content in the NiFe layer varies from 85 to 100 atomic % to maintain low Hc and λS values. A higher than normal Fe content in the CoFe layer improves the MR ratio by ≧16% compared with conventional CoFe/NiFe free layers in which the Fe content in CoFe is typically

Abstract translation: 公开了一种具有CoFe / NiFe复合自由层的CPP-GMR自旋阀，其中CoFe层的Fe含量为20〜70原子％，NiFe层的Ni含量为85〜100原子％，保持低Hc， λS值。 与FeFe中的Fe含量通常<20原子％，NiFe中的Ni含量<85原子％的常规CoFe / NiFe自由层相比，CoFe层中高于正常Fe含量使MR比提高了16％ 。 CPP-GMR性能也可以通过在被钉扎层和自由层之间的铜间隔物中结合约束电流通路层来优化。 对于具有AP2 / Ru / AP1配置的钉扎层，通过由[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成的AP1层来进一步提高自旋阀性能。

公开(公告)号：US20110117388A1

公开(公告)日：2011-05-19

申请号：US12930756

申请日：2011-01-14

Applicant: Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen

Inventor： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen

IPC: G11B5/39

CPC classification number: G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/3983 ,  Y10T428/1121

Abstract: An improved CPP magnetic read device whose oxide barrier comprises at least two separate CCP layers is disclosed. These two CCP layers differ in the PIT and IAO treatments that they received relative to the PIT/IAO treatment that would be used when only a single CCP layer is formed.

Abstract translation: 公开了一种改进的CPP磁读取装置，其氧化物屏障包括至少两个单独的CCP层。 这两个CCP层在PIT和IAO处理中不同，它们相对于仅在形成单个CCP层时将使用的PIT / IAO处理而接收。

公开(公告)号：US07390529B2

公开(公告)日：2008-06-24

申请号：US10854651

申请日：2004-05-26

Applicant: Min Li ,  Cheng T. Horng ,  Cherng Chyi Han ,  Yu-Hsia Chen ,  Ru-Ying Tong

Inventor： Min Li ,  Cheng T. Horng ,  Cherng Chyi Han ,  Yu-Hsia Chen ,  Ru-Ying Tong

IPC: B05D5/12

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F41/302 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044

Abstract: By using a free layer that includes a NiFe layer containing between 65 and 72 atomic percent iron, an improved CPP GMR device has been created. The resulting structure yields a higher CPP GMR ratio than prior art devices, while maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.

Abstract translation: 通过使用包含含有65至72原子％铁的NiFe层的自由层，已经创建了改进的CPP GMR器件。 所得到的结构产生比现有技术的装置更高的CPP GMR比，同时保持自由层柔软性和可接受的磁致伸缩。 还描述了用于制造该装置的方法。

公开(公告)号：US07355823B2

公开(公告)日：2008-04-08

申请号：US11043839

申请日：2005-01-26

Applicant: Min Li ,  Kunliang Zhang ,  Chyu-Jiuh Torng ,  Yu-Hsia Chen

Inventor： Min Li ,  Kunliang Zhang ,  Chyu-Jiuh Torng ,  Yu-Hsia Chen

IPC: G11B5/33

CPC classification number: C23C28/023 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3259 ,  H01F41/307 ,  Y10T29/49043 ,  Y10T29/49044

Abstract: The effectiveness of an IrMn pinning layer in a CPP GMR device at high switching fields has been improved by replacing the conventional single layer seed by a layer of tantalum and either ruthenium or copper. The tantalum serves to cancel out the crystallographic influence of underlying layers while the ruthenium or copper provide a suitable base on which to grow the IrMn layer.

Abstract translation: 通过用钽和钌或铜替代传统的单层种子，在高开关场中的CPP GMR器件中的IrMn钉扎层的有效性得到改善。 钽用于抵消下层的结晶影响，而钌或铜提供合适的碱以生长IrMn层。

公开(公告)号：US20070111332A1

公开(公告)日：2007-05-17

申请号：US11280523

申请日：2005-11-16

Applicant: Tong Zhao ,  Kunliang Zhang ,  Hui-Chuan Wang ,  Yu-Hsia Chen ,  Min Li

Inventor： Tong Zhao ,  Kunliang Zhang ,  Hui-Chuan Wang ,  Yu-Hsia Chen ,  Min Li

IPC: H01L21/00

CPC classification number: H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/307 ,  Y10T428/1114 ,  Y10T428/1143

Abstract: A high performance TMR sensor is fabricated by incorporating a tunnel barrier having a Mg/MgO/Mg configuration. The 4 to 14 Angstroms thick lower Mg layer and 2 to 8 Angstroms thick upper Mg layer are deposited by a DC sputtering method while the MgO layer is formed by a NOX process involving oxygen pressure from 0.1 mTorr to 1 Torr for 15 to 300 seconds. NOX time and pressure may be varied to achieve a MR ratio of at least 34% and a RA value of 2.1 ohm-um2. The NOX process provides a more uniform MgO layer than sputtering methods. The second Mg layer is employed to prevent oxidation of an adjacent ferromagnetic layer. In a bottom spin valve configuration, a Ta/Ru seed layer, IrMn AFM layer, CoFe/Ru/CoFeB pinned layer, Mg/MgO/Mg barrier, CoFe/NiFe free layer, and a cap layer are sequentially formed on a bottom shield in a read head.

Abstract translation: 通过并入具有Mg / MgO / Mg构型的隧道势垒来制造高性能TMR传感器。 通过DC溅射法沉积4至14埃厚的较低的Mg层和2至8埃厚的上部Mg层，而MgO层通过氧化压力为0.1毫托至1托的NOX工艺形成15至300秒。 可以改变NOX时间和压力以实现至少34％的MR比和2.1欧姆 - 欧姆的RA值。 NOX工艺提供比溅射方法更均匀的MgO层。 第二Mg层用于防止相邻铁磁层的氧化。 在底部自旋阀结构中，Ta / Ru籽晶层，IrMn AFM层，CoFe / Ru / CoFeB钉扎层，Mg / MgO / Mg阻挡层，CoFe / NiFe自由层和覆盖层依次形成在底部屏蔽 在读头。

公开(公告)号：US20060165881A1

公开(公告)日：2006-07-27

申请号：US11043839

申请日：2005-01-26

Applicant: Min Li ,  Kunliang Zhang ,  Chyu-Jiuh Torng ,  Yu-Hsia Chen

Inventor： Min Li ,  Kunliang Zhang ,  Chyu-Jiuh Torng ,  Yu-Hsia Chen

IPC: B05D5/12 ,  G11B5/33

CPC classification number: C23C28/023 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3259 ,  H01F41/307 ,  Y10T29/49043 ,  Y10T29/49044

Abstract: The effectiveness of an IrMn pinning layer in a CPP GMR device at high switching fields has been improved by replacing the conventional single layer seed by a layer of tantalum and either ruthenium or copper. The tantalum serves to cancel out the crystallographic influence of underlying layers while the ruthenium or copper provide a suitable base on which to grow the IrMn layer.

公开(公告)号：US20060044704A1

公开(公告)日：2006-03-02

申请号：US10933031

申请日：2004-09-02

Applicant: Min Li ,  Kunliang Zhang ,  Cheng Horng ,  Chyu Torng ,  Yu-Hsia Chen ,  Ru-Ying Tong

Inventor： Min Li ,  Kunliang Zhang ,  Cheng Horng ,  Chyu Torng ,  Yu-Hsia Chen ,  Ru-Ying Tong

IPC: G11B5/33 ,  G11B5/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B2005/3996

Abstract: Fe rich CoFe can be used in AP1 to enhance CPP GMR. However, this is found to degrade the electro-migration performance of the device. This problem has been solved by using an AP1 that is a laminate of several CoFe(25%) layers, separated from one another by copper layers. Ultra-thin layers of iron-rich CoFe are then inserted at all the copper-CoFe interfaces.

Abstract translation: FeFe CoFe可用于AP1，以提高CPP GMR。 然而，这被发现降低了器件的电迁移性能。 通过使用作为多层CoFe（25％）层的层叠体的AP1，通过铜层彼此分离，解决了该问题。 然后在所有铜 - 钴Fe界面上插入超薄的富铁CoFe层。