Invention Grant
- Patent Title: Free layer for CPP GMR having iron rich NiFe
- Patent Title (中): 自由层CPP GMR具有铁丰富的NiFe
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Application No.: US10854651Application Date: 2004-05-26
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Publication No.: US07390529B2Publication Date: 2008-06-24
- Inventor: Min Li , Cheng T. Horng , Cherng Chyi Han , Yu-Hsia Chen , Ru-Ying Tong
- Applicant: Min Li , Cheng T. Horng , Cherng Chyi Han , Yu-Hsia Chen , Ru-Ying Tong
- Applicant Address: US CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: B05D5/12
- IPC: B05D5/12
Abstract:
By using a free layer that includes a NiFe layer containing between 65 and 72 atomic percent iron, an improved CPP GMR device has been created. The resulting structure yields a higher CPP GMR ratio than prior art devices, while maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.
Public/Granted literature
- US20050264954A1 Free layer for CPP GMR having iron rich NiFe Public/Granted day:2005-12-01
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