公开(公告)号：US09006704B2

公开(公告)日：2015-04-14

申请号：US12931866

申请日：2011-02-11

Applicant: Guenole Jan ,  Ru Ying Tong ,  Witold Kula ,  Cheng Horng

Inventor： Guenole Jan ,  Ru Ying Tong ,  Witold Kula ,  Cheng Horng

IPC: H01L33/04 ,  H01L29/66 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16 ,  H01F10/32 ,  H01F41/30 ,  B82Y40/00 ,  H01L29/82 ,  H01F10/193

CPC classification number: H01L29/66984 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1933 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/303 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic element is disclosed wherein first and second interfaces of a free layer with a Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to lower switching current or increase thermal stability in a magnetic tunnel junction (MTJ). In a MTJ with a bottom spin valve configuration where the Hk enhancing layer is an oxide, the capping layer contacting the Hk enhancing layer is selected to have a free energy of oxide formation substantially greater than that of the oxide. The free layer may be a single layer or composite comprised of an Fe rich alloy such as Co20Fe60B20. With a thin free layer, the interfacial perpendicular anisotropy may dominate the shape anisotropy to generate a magnetization perpendicular to the planes of the layers. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.

Abstract translation: 公开了一种磁性元件，其中具有Hk增强层和隧道势垒的自由层的第一和第二界面分别产生增强的表面垂直各向异性以降低开关电流或增加磁性隧道结（MTJ）中的热稳定性。 在具有底部自旋阀结构的MTJ中，其中Hk增强层是氧化物，选择与Hk增强层接触的覆盖层，以使氧化物形成的自由能基本上大于氧化物的自由能。 自由层可以是由富含Fe的合金如Co20Fe60B20组成的单层或复合材料。 利用薄的自由层，界面垂直各向异性可以支配形状各向异性以产生垂直于层的平面的磁化。 磁性元件可以是自旋电子器件的一部分或用作域壁运动装置中的传播介质。

公开(公告)号：US08921961B2

公开(公告)日：2014-12-30

申请号：US13617432

申请日：2012-09-14

Applicant: Witold Kula ,  Guenole Jan ,  Ru-Ying Tong ,  Yu-Jen Wang

Inventor： Witold Kula ,  Guenole Jan ,  Ru-Ying Tong ,  Yu-Jen Wang

IPC: H01L29/82 ,  H01L21/02 ,  H01L21/00

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/08

Abstract: An improved PMA STT MTJ storage element, and a method for forming it, are described. By inserting a suitable oxide layer between the storage and cap layers, improved PMA properties are obtained, increasing the potential for a larger Eb/kT thermal factor as well as a larger MR. Another important advantage is better compatibility with high processing temperatures, potentially facilitating integration with CMOS.

Abstract translation: 描述了改进的PMA STT MTJ存储元件及其形成方法。 通过在存储层和盖层之间插入合适的氧化物层，获得改进的PMA性质，增加更大的Eb / kT热因子的可能性以及较大的MR。 另一个重要的优点是更好的与高处理温度的兼容性，有可能促进与CMOS的集成。

公开(公告)号：US08823118B2

公开(公告)日：2014-09-02

申请号：US13344292

申请日：2012-01-05

Applicant: Cheng T Horng ,  Ru-Ying Tong

Inventor： Cheng T Horng ,  Ru-Ying Tong

IPC: H01L29/82 ,  H01L21/8246 ,  B82Y99/00

CPC classification number: H01L43/12 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/305 ,  H01L27/228 ,  H01L43/08

Abstract: A STT-RAM MTJ is disclosed with a composite tunnel barrier comprised of a CoMgO layer that contacts a pinned layer and a MgO layer which contacts a free layer. A CoMg layer with a Co content between 20 and 40 atomic % is deposited on the pinned layer and is then oxidized to produce Co nanoconstrictions within a MgO insulator matrix. The nanoconstrictions control electromigration of Co into an adjoining MgO layer. The free layer may comprise a nanocurrent channel (NCC) layer such as FeSiO or a moment dilution layer such as Ta between two ferromagnetic layers. Furthermore, a second CoMgO layer or a CoMgO/MgO composite may serve as a perpendicular Hk enhancing layer formed between the free layer and a cap layer. One or both of the pinned layer and free layer may exhibit in-plane anisotropy or perpendicular magnetic anisotropy.

Abstract translation: 公开了具有由接触被钉扎层的CoMgO层和接触自由层的MgO层组成的复合隧道势垒的STT-RAM MTJ。 将钴含量为20至40原子％的CoMg层沉积在钉扎层上，然后被氧化以在MgO绝缘体基体内产生Co纳米收缩。 纳米监测将Co的电迁移控制到相邻的MgO层中。 自由层可以包括纳米电流通道（NCC）层，例如FeSiO或在两个铁磁层之间的诸如Ta之间的力矩稀释层。 此外，第二CoMgO层或CoMgO / MgO复合物可以用作在自由层和盖层之间形成的垂直Hk增强层。 被钉扎层和自由层中的一个或两个可以表现出面内各向异性或垂直磁各向异性。

公开(公告)号：US20140070341A1

公开(公告)日：2014-03-13

申请号：US13609780

申请日：2012-09-11

Applicant: Robert Beach ,  Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

Inventor： Robert Beach ,  Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

IPC: H01L29/82 ,  H01F38/00

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/307 ,  H01L27/222 ,  H01L27/224 ,  H01L29/82 ,  H01L43/10

Abstract: A synthetic antiferromagnetic (SAF) structure for a spintronic device is disclosed and has an AP2/antiferromagnetic (AF) coupling/CoFeB configuration. The SAF structure is thinned to reduce the fringing (Ho) field while maintaining high coercivity. The AP2 reference layer has intrinsic perpendicular magnetic anisotropy (PMA) and induces PMA in a thin CoFeB layer through AF coupling. In one embodiment, AF coupling is improved by inserting a Co dusting layer on top and bottom surfaces of a Ru AF coupling layer. When AP2 is (Co/Ni)4, and CoFeB thickness is 7.5 Angstroms, Ho is reduced to 125 Oe, Hc is 1000 Oe, and a balanced saturation magnetization-thickness product (Mst)=0.99 is achieved. The SAF structure may also be represented as FL2/AF coupling/CoFeB where FL2 is a ferromagnetic layer with intrinsic PMA.

Abstract translation: 公开了一种用于自旋电子器件的合成反铁磁（SAF）结构，并具有AP2 /反铁磁（AF）耦合/ CoFeB配置。 SAF结构变薄以减少边缘（Ho）场，同时保持高矫顽力。 AP2参考层具有固有的垂直磁各向异性（PMA），并通过AF耦合在薄CoFeB层中诱导PMA。 在一个实施例中，通过在Ru AF耦合层的顶表面和底表面上插入Co除尘层来改善AF耦合。 当AP2为（Co / Ni）4，CoFeB厚度为7.5埃时，Ho降至125Oe，Hc为1000Oe，平衡饱和磁化强度产物（Mst）= 0.99。 SAF结构也可以表示为FL2 / AF耦合/ CoFeB，其中FL2是具有固有PMA的铁磁层。

公开(公告)号：US20140017820A1

公开(公告)日：2014-01-16

申请号：US14032599

申请日：2013-09-20

Applicant: Guenole Jan ,  Witold Kula ,  Ru Ying Tong ,  Yu Jen Wang

Inventor： Guenole Jan ,  Witold Kula ,  Ru Ying Tong ,  Yu Jen Wang

IPC: H01L43/12

CPC classification number: H01L43/10 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3909 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A method for forming a MTJ in a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

Abstract translation: 公开了一种用于在自旋电子器件中形成MTJ的方法，并且包括在（Co / Ni）n组成的上覆层压层中增强垂直磁各向异性（PMA）的薄籽晶层。 种子层优选为NiCr，NiFeCr，Hf或其复合物。 此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。 在CoFeB层和层叠层之间可以存在Ta插入层，以促进CoFeB层中的（100）结晶。 叠层可以用作MTJ中的参考层，偶极子层或自由层。 在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

公开(公告)号：US20130221460A1

公开(公告)日：2013-08-29

申请号：US13548859

申请日：2012-07-13

Applicant: Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

Inventor： Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

IPC: H01L29/82 ,  H01L21/02

CPC classification number: H01L43/08 ,  H01L43/10

Abstract: A magnetic element in a spintronic device or serving as a propagation medium in a domain wall motion device is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction. The free layer may be a single layer or a composite and is comprised of a glassing agent that has a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. A CoFeB free layer selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region.

Abstract translation: 公开了一种自旋电子器件中的磁性元件或用作畴壁运动装置中的传播介质的磁性元件，其中分别具有垂直Hk增强层和隧道势垒的自由层的第一和第二界面产生增强的表面垂直各向异性以增加热量 磁性隧道结中的稳定性。 自由层可以是单层或复合物，并且由在中间部分具有第一浓度并且在第一和第二界面附近的区域中的第二浓度小于第一浓度的玻璃化剂组成。 CoFeB自由层选择性地沿着第一和第二界面结晶，但是在含有玻璃试剂的中间区域保持非晶形特征，提供退火温度小于中间区域的结晶温度。

公开(公告)号：US08404367B2

公开(公告)日：2013-03-26

申请号：US13317484

申请日：2011-10-19

Applicant: Cheng T. Horng ,  Ru-Ying Tong

Inventor： Cheng T. Horng ,  Ru-Ying Tong

IPC: G11B5/39

CPC classification number: G01R33/098 ,  G01R33/1284 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T428/1107 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/1136 ,  Y10T428/1143

Abstract: A dual spin filter that minimizes spin-transfer magnetization switching current (Jc) while achieving a high dR/R in STT-RAM devices is disclosed. The bottom spin valve has a MgO tunnel barrier layer formed with a natural oxidation process to achieve low RA, a CoFe/Ru/CoFeB—CoFe pinned layer, and a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel (NCC) layer to minimize Jc0. The NCC layer may have be a composite wherein conductive M(Si) grains are magnetically coupled with adjacent ferromagnetic layers and are formed in an oxide, nitride, or oxynitride insulator matrix. The upper spin valve has a Cu spacer to lower the free layer damping constant. A high annealing temperature of 360° C. is used to increase the MR ratio above 100%. A Jc0 of less than 1×106 A/cm2 is expected based on quasistatic measurements of a MTJ with a similar MgO tunnel barrier and composite free layer.

Abstract translation: 公开了在STT-RAM器件中实现高dR / R的同时使自旋迁移磁化开关电流（Jc）最小化的双自旋滤波器。 底部自旋阀具有通过自然氧化工艺形成的MgO隧道阻挡层，以实现低RA，CoFe / Ru / CoFeB-CoFe钉扎层和具有中等纳米通道（NCC）的CoFeB / FeSiO / CoFeB复合材料自由层， 层以最小化Jc0。 NCC层可以是其中导电M（Si）晶粒与相邻铁磁层磁耦合并且形成在氧化物，氮化物或氧氮化物绝缘体基体中的复合材料。 上自旋阀具有Cu间隔物以降低自由层阻尼常数。 使用360℃的高退火温度将MR比提高到100％以上。 基于具有类似的MgO隧道势垒和复合自由层的MTJ的准静态测量，预期小于1×106A / cm 2的Jc0。

公开(公告)号：US08378330B2

公开(公告)日：2013-02-19

申请号：US12584190

申请日：2009-09-01

Applicant: Cheng T. Horng ,  Ru-Ying Tong

Inventor： Cheng T. Horng ,  Ru-Ying Tong

IPC: H01L43/00

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11C11/161 ,  G11C11/1673 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3295 ,  H01F41/302 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: An MTJ in an MRAM array or TMR read head is disclosed in which a low magnetization capping layer is a composite having a NiFeHf inner layer formed on a NiFe or CoFeB/NiFe free layer, a Ta middle layer, and a Ru outer layer on the Ta layer. For example, a low magnetization NiFeHf layer is achieved by co-sputtering NiFe and Hf targets with a forward power of 400 W and 200 W, respectively. A higher Hf content increases the oxygen gettering power of the NiFeHf layer and the thickness is modified to change dR/R, RA, and magnetostriction values. A so-called dead layer between the free layer and capping layer is restored by incorporating a NiFeHf layer on the free layer to improve lattice matching. The Fe content in the NiFe target used to make the NiFeHf layer is preferably the same as in the NiFe free layer.

公开(公告)号：US20120286382A1

公开(公告)日：2012-11-15

申请号：US13068398

申请日：2011-05-10

Applicant: Guenole Jan ,  Witold Kula ,  Ru Ying Tong ,  Yu Jen Wang

Inventor： Guenole Jan ,  Witold Kula ,  Ru Ying Tong ,  Yu Jen Wang

IPC: H01L29/82 ,  H01L21/02

CPC classification number: H01L43/10 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3909 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition or the like where n is from 2 to 30. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

Abstract translation: 公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / Ni）n组合物等在上层叠层中提高垂直磁各向异性（PMA），其中n为2至30.种子层 优选为NiCr，NiFeCr，Hf，或其复合物，厚度为10〜100埃。 此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。 在CoFeB层和层叠层之间可以存在Ta插入层，以促进CoFeB层中的（100）结晶。 叠层可以用作MTJ中的参考层，偶极子层或自由层。 在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

公开(公告)号：US20120280336A1

公开(公告)日：2012-11-08

申请号：US13068172

申请日：2011-05-04

Applicant: Guenole Jan ,  Ru Ying Tong ,  Witold Kula

Inventor： Guenole Jan ,  Ru Ying Tong ,  Witold Kula

IPC: H01L29/82 ,  H01L21/00

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic element is disclosed that has a composite free layer with a FM1/moment diluting/FM2 configuration wherein FM1 and FM2 are magnetic layers made of one or more of Co, Fe, Ni, and B and the moment diluting layer is used to reduce the perpendicular demagnetizing field. As a result, lower resistance x area product and higher thermal stability are realized when perpendicular surface anisotropy dominates shape anisotropy to give a magnetization perpendicular to the planes of the FM1, FM2 layers. The moment diluting layer may be a non-magnetic metal like Ta or a CoFe alloy with a doped non-magnetic metal. A perpendicular Hk enhancing layer interfaces with the FM2 layer and may be an oxide to increase the perpendicular anisotropy field in the FM2 layer. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.

Abstract translation: 公开了具有FM1 /力矩稀释/ FM2配置的复合自由层的磁性元件，其中FM1和FM2是由Co，Fe，Ni和B中的一种或多种构成的磁性层，并且力矩稀释层用于减少 垂直退磁场。 结果，当垂直表面各向异性支配形状各向异性以产生垂直于FM1，FM2层的平面的磁化时，实现较低的电阻x面积乘积和较高的热稳定性。 瞬时稀释层可以是非磁性金属如Ta或具有掺杂的非磁性金属的CoFe合金。 垂直Hk增强层与FM2层接合，并且可以是氧化物以增加FM2层中的垂直各向异性场。 磁性元件可以是自旋电子器件的一部分或用作域壁运动装置中的传播介质。