公开(公告)号：US09006849B2

公开(公告)日：2015-04-14

申请号：US14226814

申请日：2014-03-26

Applicant: Yimin Guo

Inventor： Yimin Guo

IPC: H01L43/12 ,  H01L43/02 ,  H01L29/82 ,  H01L21/00 ,  H01L21/8246 ,  H01L21/02 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01L43/02 ,  H01L43/08

Abstract: This invention comprises a method to make small MTJ element using hybrid etching and oxygen plasma immersion ion implantation. The method has no removal of the magnetic free layer (or memory layer) and hence prevents any possible physical damage near the free layer edges. After photolithography patterning, alternative Ta, Ru, Ta etchings are performed before it stops on an MgO intermediate layer above the free layer. Then an oxygen plasma immersion ion implantation is performed to completely oxidize the exposed portion of the free layer, leaving the hard mask covered portion unchanged which define the lateral width of the MTJ element.

Abstract translation: 本发明包括使用混合蚀刻和氧等离子体浸没离子注入制造小型MTJ元件的方法。 该方法没有去除无磁层（或记忆层），因此防止在自由层边缘附近的任何可能的物理损伤。 在光刻图案化之后，在自由层上方的MgO中间层停止之前进行替代的Ta，Ru，Ta蚀刻。 然后执行氧等离子体浸没离子注入以完全氧化自由层的暴露部分，使硬掩模覆盖部分不变，这限定了MTJ元件的横向宽度。

公开(公告)号：US08823118B2

公开(公告)日：2014-09-02

申请号：US13344292

申请日：2012-01-05

Applicant: Cheng T Horng ,  Ru-Ying Tong

Inventor： Cheng T Horng ,  Ru-Ying Tong

IPC: H01L29/82 ,  H01L21/8246 ,  B82Y99/00

CPC classification number: H01L43/12 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/305 ,  H01L27/228 ,  H01L43/08

Abstract: A STT-RAM MTJ is disclosed with a composite tunnel barrier comprised of a CoMgO layer that contacts a pinned layer and a MgO layer which contacts a free layer. A CoMg layer with a Co content between 20 and 40 atomic % is deposited on the pinned layer and is then oxidized to produce Co nanoconstrictions within a MgO insulator matrix. The nanoconstrictions control electromigration of Co into an adjoining MgO layer. The free layer may comprise a nanocurrent channel (NCC) layer such as FeSiO or a moment dilution layer such as Ta between two ferromagnetic layers. Furthermore, a second CoMgO layer or a CoMgO/MgO composite may serve as a perpendicular Hk enhancing layer formed between the free layer and a cap layer. One or both of the pinned layer and free layer may exhibit in-plane anisotropy or perpendicular magnetic anisotropy.

Abstract translation: 公开了具有由接触被钉扎层的CoMgO层和接触自由层的MgO层组成的复合隧道势垒的STT-RAM MTJ。 将钴含量为20至40原子％的CoMg层沉积在钉扎层上，然后被氧化以在MgO绝缘体基体内产生Co纳米收缩。 纳米监测将Co的电迁移控制到相邻的MgO层中。 自由层可以包括纳米电流通道（NCC）层，例如FeSiO或在两个铁磁层之间的诸如Ta之间的力矩稀释层。 此外，第二CoMgO层或CoMgO / MgO复合物可以用作在自由层和盖层之间形成的垂直Hk增强层。 被钉扎层和自由层中的一个或两个可以表现出面内各向异性或垂直磁各向异性。

公开(公告)号：US20140103469A1

公开(公告)日：2014-04-17

申请号：US13649327

申请日：2012-10-11

Applicant: HEADWAY TECHNOLOGIES, INC.

Inventor： Guenole Jan ,  Ru-Ying Tong

IPC: H01L29/82 ,  H01L21/8246

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01F10/123 ,  H01F10/30 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/307 ,  H01L27/222 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic element is disclosed wherein a composite seed layer such as TaN/Mg enhances perpendicular magnetic anisotropy (PMA) in an overlying magnetic layer that may be a reference layer, free layer, or dipole layer. The first seed layer is selected from one or more of Ta, Zr, Nb, TaN, ZrN, NbN, and Ru. The second seed layer is selected from one or more of Mg, Sr, Ti, Al, V, Hf, B, and Si. A growth promoting layer made of NiCr or an alloy thereof may be inserted between the seed layer and magnetic layer. The magnetic element has thermal stability to at least 400° C.

Abstract translation: 公开了一种磁性元件，其中诸如TaN / Mg的复合种子层增强了上层磁性层中的垂直磁各向异性（PMA），其可以是参考层，自由层或偶极子层。 第一种子层选自Ta，Zr，Nb，TaN，ZrN，NbN和Ru中的一种或多种。 第二晶种层选自Mg，Sr，Ti，Al，V，Hf，B和Si中的一种或多种。 可以在种子层和磁性层之间插入由NiCr或其合金制成的生长促进层。 磁性元件具有至少400℃的热稳定性

公开(公告)号：US20130334630A1

公开(公告)日：2013-12-19

申请号：US13527173

申请日：2012-06-19

Applicant: Witold Kula ,  Gurtej S. Sandhu ,  Stephen J. Kramer

Inventor： Witold Kula ,  Gurtej S. Sandhu ,  Stephen J. Kramer

IPC: H01L29/82 ,  H01L21/8246

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/12

Abstract: Methods of forming magnetic memory cells are disclosed. Magnetic and non-magnetic materials are formed into a primal precursor structure in an initial stress state of essentially no strain, compressive strain, or tensile strain. A stress-compensating material, e.g., a non-sacrificial, conductive material, is formed to be disposed on the primal precursor structure to form a stress-compensated precursor structure in a net beneficial stress state. Thereafter, the stress-compensated precursor structure may be patterned to form a cell core of a memory cell. The net beneficial stress state of the stress-compensated precursor structure lends to formation of one or more magnetic regions, in the cell core, exhibiting a vertical magnetic orientation without deteriorating a magnetic strength of the one or more magnetic regions. Also disclosed are memory cells, memory cell structures, semiconductor device structures, and spin torque transfer magnetic random access memory (STT-MRAM) systems.

Abstract translation: 公开了形成磁存储器单元的方法。 磁性和非磁性材料在基本上没有应变，压缩应变或拉伸应变的初始应力状态下形成原始前体结构。 形成应力补偿材料，例如非牺牲导电材料，以设置在原始前体结构上以在净有益应力状态下形成应力补偿前体结构。 此后，应力补偿前体结构可以被图案化以形成存储单元的单元芯。 应力补偿前体结构的净有益应力状态有助于在电池芯中形成一个或多个磁性区域，呈现垂直磁性取向而不会使一个或多个磁性区域的磁强度恶化。 还公开了存储器单元，存储单元结构，半导体器件结构和自旋转矩传递磁随机存取存储器（STT-MRAM）系统。

公开(公告)号：US08598576B2

公开(公告)日：2013-12-03

申请号：US13029054

申请日：2011-02-16

Applicant: Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan

Inventor： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan

IPC: H01L29/82 ,  H01L21/8246

CPC classification number: H01L29/66984 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/302 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

Abstract: A spin toque transfer magnetic random access memory (STTMRAM) element comprises a reference layer, formed on a substrate, with a fixed perpendicular magnetic component. A junction layer is formed on top of the reference layer and a free layer is formed on top of the junction layer with a perpendicular magnetic orientation, at substantially its center of the free layer and switchable. A spacer layer is formed on top of the free layer and a fixed layer is formed on top of the spacer layer, the fixed layer has a fixed perpendicular magnetic component opposite to that of the reference layer. The magnetic orientation of the free layer switches relative to that of the fixed layer. The perpendicular magnetic components of the fixed layer and the reference layer substantially cancel each other and the free layer has an in-plane edge magnetization field.

Abstract translation: 自旋转矩磁性随机存取存储器（STTMRAM）元件包括在基板上形成的具有固定的垂直磁性部件的参考层。 接合层形成在参考层的顶部，并且在接合层的顶部上以自由层的大致中心位置处具有垂直磁性取向形成自由层。 间隔层形成在自由层的顶部，固定层形成在间隔层的顶部，固定层具有与基准层相反的固定的垂直磁性部件。 自由层的磁性取向相对于固定层的磁性取向。 固定层和参考层的垂直磁性分量基本相互抵消，自由层具有面内边缘磁化场。

公开(公告)号：US20130277778A1

公开(公告)日：2013-10-24

申请号：US13452230

申请日：2012-04-20

Applicant: Chern-Yow HSU ,  Shih-Chang LIU ,  Chia-Shiung TSAI

Inventor： Chern-Yow HSU ,  Shih-Chang LIU ,  Chia-Shiung TSAI

IPC: H01L29/82 ,  H01L21/8246

Abstract: This description relates to a method for fabricating a magnetoresistive random access memory (MRAM) device having a plurality of magnetic tunnel junction (MTJ) units. The method includes forming a bottom conductive layer, forming an anti-ferromagnetic layer and forming a tunnel layer over the bottom conductive layer and the anti-ferromagnetic layer. The method further includes forming a free magnetic layer, having a magnetic moment aligned in a direction that is adjustable by applying an electromagnetic field, over the tunnel layer and forming a top conductive layer over the free magnetic layer. The method further includes performing at least one lithographic process to remove portions of the bottom conductive layer, the anti-ferromagnetic layer, the tunnel layer, the free magnetic layer and the top conductive layer that is uncovered by the photoresist layer until the bottom conductive layer is exposed and removing portions of at least one sidewall of the MTJ unit.

Abstract translation: 该描述涉及一种用于制造具有多个磁性隧道结（MTJ）单元的磁阻随机存取存储器（MRAM）装置的方法。 该方法包括形成底部导电层，形成反铁磁层并在底部导电层和反铁磁层上形成隧道层。 该方法还包括形成自由磁性层，该磁性层在通过施加电磁场的可调整方向上对准磁矩，并在隧道层上形成顶部导电层，并在自由磁性层上形成顶部导电层。 该方法还包括执行至少一个光刻工艺以去除由光致抗蚀剂层未覆盖的底部导电层，反铁磁层，隧道层，自由磁性层和顶部导电层的部分，直到底部导电层 暴露并去除MTJ单元的至少一个侧壁的部分。

公开(公告)号：US20130242646A1

公开(公告)日：2013-09-19

申请号：US13419066

申请日：2012-03-13

Applicant: Romney R. Katti ,  James L. Tucker ,  Anuj Kohli

Inventor： Romney R. Katti ,  James L. Tucker ,  Anuj Kohli

IPC: G11C11/16 ,  H01L21/8246

CPC classification number: H01L23/573 ,  G06F21/79 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1695 ,  H01L27/226 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An MRAM die may include a first write line, a second write line, an MRAM cell disposed between the first write line and the second write line, and a magnetic security structure adjacent to the MRAM cell. The magnetic security structure may include a permanent magnetic layer and a soft magnetic layer.

Abstract translation: MRAM管芯可以包括第一写入线，第二写入线，布置在第一写入线和第二写入线之间的MRAM单元，以及与MRAM单元相邻的磁性安全结构。 磁性安全结构可以包括永久磁性层和软磁性层。

公开(公告)号：US08536007B2

公开(公告)日：2013-09-17

申请号：US13402426

申请日：2012-02-22

Applicant: Mark D. Hall ,  Mehul D. Shroff

Inventor： Mark D. Hall ,  Mehul D. Shroff

IPC: H01L21/8246

CPC classification number: H01L29/66833 ,  H01L21/28282 ,  H01L27/1157 ,  H01L27/11573 ,  H01L29/42348

Abstract: A first conductive layer and an underlying charge storage layer are patterned to form a control gate in an NVM region. A first dielectric layer is formed over the control gate. A sacrificial layer is formed over the first dielectric layer and planarized. A patterned masking layer is formed over the sacrificial layer which includes a first portion which defines a select gate location laterally adjacent the control gate in the NVM region and a second portion which defines a logic gate in a logic region. Exposed portions of the sacrificial layer are removed such that a first portion remains at the select gate location. A second dielectric layer is formed over the first portion and planarized to expose the first portion. The first portion is removed to result in an opening at the select gate location. A gate dielectric layer and a select gate are formed in the opening.

Abstract translation: 图案化第一导电层和底层电荷存储层，以在NVM区域中形成控制栅极。 第一介电层形成在控制栅上。 牺牲层形成在第一电介质层上并且被平坦化。 在牺牲层上形成图案化掩模层，该牺牲层包括限定在NVM区域中与控制栅极横向相邻的选择栅极位置的第一部分和在逻辑区域中限定逻辑门的第二部分。 去除牺牲层的暴露部分，使得第一部分保持在选择栅极位置。 在第一部分上形成第二电介质层并将其平坦化以暴露第一部分。 第一部分被去除以导致选择门位置处的打开。 在开口中形成栅介质层和选择栅极。

公开(公告)号：US20130100724A1

公开(公告)日：2013-04-25

申请号：US13423520

申请日：2012-03-19

Applicant: Karthik Venkataraman ,  Jagadeesh S. Moodera

Inventor： Karthik Venkataraman ,  Jagadeesh S. Moodera

IPC: G11C11/22 ,  H01L21/8246 ,  B82Y99/00

CPC classification number: G11B5/02 ,  G11B5/64 ,  G11B5/65 ,  G11B5/746 ,  G11B9/04 ,  G11B9/149 ,  G11B2005/0002 ,  G11C11/161 ,  G11C11/1675 ,  G11C13/0014 ,  H01F10/005 ,  H01F10/3254 ,  H01F41/325

Abstract: A memory element is provided that includes a ferromagnetic (FM) layer having one or more ferromagnetic materials. One or more first molecule layers are positioned on the FM layer where charge transfer and interface chemistry between the one or more first molecule layers and FM layer induces a magnetic moment in the one or more first molecule layers. The magnetic moment is stored in the one or more first molecule layers acting as bit information that is retained or written into the one or more first molecule layers. One or more spin-filter layers are positioned on the one or more first molecule layers. The one or more spin-filter layers are positioned on the one or more spin-filter layers to form a physical or a chemical π-dimer layer structure.

Abstract translation: 提供了一种存储元件，其包括具有一个或多个铁磁材料的铁磁（FM）层。 一个或多个第一分子层位于FM层上，其中一个或多个第一分子层和FM层之间的电荷转移和界面化学在一个或多个第一分子层中诱导磁矩。 磁矩存储在作为保留或写入一个或多个第一分子层的位信息的一个或多个第一分子层中。 一个或多个自旋过滤层位于一个或多个第一分子层上。 一个或多个自旋过滤器层定位在一个或多个自旋过滤器层上以形成物理或化学的二聚体 - 二聚体层结构。

公开(公告)号：US20130075846A1

公开(公告)日：2013-03-28

申请号：US13609230

申请日：2012-09-10

Applicant: Katsumi SUEMITSU ,  Eiji Kariyada

Inventor： Katsumi SUEMITSU ,  Eiji Kariyada

IPC: H01L29/82 ,  H01L21/8246

CPC classification number: H01L43/12 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/226 ,  H01L43/08

Abstract: A memory includes an underlying layer of a ferromagnetic body, a first nonmagnetic layer on the underlying layer, a data memorizing layer laid on the first nonmagnetic layer and made of a ferromagnetic body having perpendicular magnetic anisotropy, a reference layer coupled through a second nonmagnetic layer with the data memorizing layer, and first and second magnetization fixed layers laid underneath the underlying layer to come into contact with the underlying layer. The data memorizing layer includes a magnetization liberalized region having reversible magnetization, and overlapping with the reference layer, a first magnetization fixed region coupled with an end of the magnetization liberalized region, and having a magnetization direction fixed to +z direction by the first magnetization fixed layer, and a second magnetization fixed region coupled with a different end of the magnetization liberalized region, and having a magnetization direction fixed to −z direction by the second magnetization fixed layer.

Abstract translation: 存储器包括铁磁体的下层，下层上的第一非磁性层，位于第一非磁性层上并由具有垂直磁各向异性的铁磁体构成的数据存储层，通过第二非磁性层耦合的参考层 数据存储层，第一和第二磁化固定层铺设在下层之下，与下层相接触。 数据存储层包括具有可逆磁化并与参考层重叠的磁化自由化区域，与磁化自由化区域的端部耦合的第一磁化固定区域，并且具有通过第一磁化固定的磁化方向固定到+ z方向 以及与磁化自由化区域的不同端部耦合的第二磁化固定区域，并且具有由第二磁化固定层固定在-z方向的磁化方向。