公开(公告)号：US08823118B2

公开(公告)日：2014-09-02

申请号：US13344292

申请日：2012-01-05

Applicant: Cheng T Horng ,  Ru-Ying Tong

Inventor： Cheng T Horng ,  Ru-Ying Tong

IPC: H01L29/82 ,  H01L21/8246 ,  B82Y99/00

CPC classification number: H01L43/12 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/305 ,  H01L27/228 ,  H01L43/08

Abstract: A STT-RAM MTJ is disclosed with a composite tunnel barrier comprised of a CoMgO layer that contacts a pinned layer and a MgO layer which contacts a free layer. A CoMg layer with a Co content between 20 and 40 atomic % is deposited on the pinned layer and is then oxidized to produce Co nanoconstrictions within a MgO insulator matrix. The nanoconstrictions control electromigration of Co into an adjoining MgO layer. The free layer may comprise a nanocurrent channel (NCC) layer such as FeSiO or a moment dilution layer such as Ta between two ferromagnetic layers. Furthermore, a second CoMgO layer or a CoMgO/MgO composite may serve as a perpendicular Hk enhancing layer formed between the free layer and a cap layer. One or both of the pinned layer and free layer may exhibit in-plane anisotropy or perpendicular magnetic anisotropy.

Abstract translation: 公开了具有由接触被钉扎层的CoMgO层和接触自由层的MgO层组成的复合隧道势垒的STT-RAM MTJ。 将钴含量为20至40原子％的CoMg层沉积在钉扎层上，然后被氧化以在MgO绝缘体基体内产生Co纳米收缩。 纳米监测将Co的电迁移控制到相邻的MgO层中。 自由层可以包括纳米电流通道（NCC）层，例如FeSiO或在两个铁磁层之间的诸如Ta之间的力矩稀释层。 此外，第二CoMgO层或CoMgO / MgO复合物可以用作在自由层和盖层之间形成的垂直Hk增强层。 被钉扎层和自由层中的一个或两个可以表现出面内各向异性或垂直磁各向异性。