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1.发明授权Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM 有权STT-MRAM具有垂直磁各向异性的最小厚度合成反铁磁（SAF）结构公开(公告)号：US08860156B2
公开(公告)日：2014-10-14
申请号：US13609780
申请日：2012-09-11
Applicant: Robert Beach , Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
Inventor： Robert Beach , Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
IPC: H01L29/82
CPC classification number: H01L43/02 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01F41/307 , H01L27/222 , H01L27/224 , H01L29/82 , H01L43/10
Abstract: A synthetic antiferromagnetic (SAF) structure for a spintronic device is disclosed and has an AP2/antiferromagnetic (AF) coupling/CoFeB configuration. The SAF structure is thinned to reduce the fringing (Ho) field while maintaining high coercivity. The AP2 reference layer has intrinsic perpendicular magnetic anisotropy (PMA) and induces PMA in a thin CoFeB layer through AF coupling. In one embodiment, AF coupling is improved by inserting a Co dusting layer on top and bottom surfaces of a Ru AF coupling layer. When AP2 is (Co/Ni)4, and CoFeB thickness is 7.5 Angstroms, Ho is reduced to 125 Oe, Hc is 1000 Oe, and a balanced saturation magnetization-thickness product (Mst)=0.99 is achieved. The SAF structure may also be represented as FL2/AF coupling/CoFeB where FL2 is a ferromagnetic layer with intrinsic PMA.
Abstract translation: 公开了一种用于自旋电子器件的合成反铁磁（SAF）结构，并具有AP2 /反铁磁（AF）耦合/ CoFeB配置。 SAF结构变薄以减少边缘（Ho）场，同时保持高矫顽力。 AP2参考层具有固有的垂直磁各向异性（PMA），并通过AF耦合在薄CoFeB层中诱导PMA。 在一个实施例中，通过在Ru AF耦合层的顶表面和底表面上插入Co除尘层来改善AF耦合。 当AP2为（Co / Ni）4，CoFeB厚度为7.5埃时，Ho降至125Oe，Hc为1000Oe，平衡饱和磁化强度产物（Mst）= 0.99。 SAF结构也可以表示为FL2 / AF耦合/ CoFeB，其中FL2是具有固有PMA的铁磁层。
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2.发明申请Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure with Perpendicular Magnetic Anisotropy for STT-MRAM 有权STT-MRAM具有垂直磁各向异性的最小厚度合成反铁磁（SAF）结构公开(公告)号：US20140070341A1
公开(公告)日：2014-03-13
申请号：US13609780
申请日：2012-09-11
Applicant: Robert Beach , Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
Inventor： Robert Beach , Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
CPC classification number: H01L43/02 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01F41/307 , H01L27/222 , H01L27/224 , H01L29/82 , H01L43/10
Abstract: A synthetic antiferromagnetic (SAF) structure for a spintronic device is disclosed and has an AP2/antiferromagnetic (AF) coupling/CoFeB configuration. The SAF structure is thinned to reduce the fringing (Ho) field while maintaining high coercivity. The AP2 reference layer has intrinsic perpendicular magnetic anisotropy (PMA) and induces PMA in a thin CoFeB layer through AF coupling. In one embodiment, AF coupling is improved by inserting a Co dusting layer on top and bottom surfaces of a Ru AF coupling layer. When AP2 is (Co/Ni)4, and CoFeB thickness is 7.5 Angstroms, Ho is reduced to 125 Oe, Hc is 1000 Oe, and a balanced saturation magnetization-thickness product (Mst)=0.99 is achieved. The SAF structure may also be represented as FL2/AF coupling/CoFeB where FL2 is a ferromagnetic layer with intrinsic PMA.
Abstract translation: 公开了一种用于自旋电子器件的合成反铁磁（SAF）结构，并具有AP2 /反铁磁（AF）耦合/ CoFeB配置。 SAF结构变薄以减少边缘（Ho）场，同时保持高矫顽力。 AP2参考层具有固有的垂直磁各向异性（PMA），并通过AF耦合在薄CoFeB层中诱导PMA。 在一个实施例中，通过在Ru AF耦合层的顶表面和底表面上插入Co除尘层来改善AF耦合。 当AP2为（Co / Ni）4，CoFeB厚度为7.5埃时，Ho降至125Oe，Hc为1000Oe，平衡饱和磁化强度产物（Mst）= 0.99。 SAF结构也可以表示为FL2 / AF耦合/ CoFeB，其中FL2是具有固有PMA的铁磁层。
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3.发明申请STT-MRAM Reference Layer Having Substantially Reduced Stray Field and Consisting of a Single Magnetic Domain 有权STT-MRAM参考层具有基本上减少的杂散场并且由单个磁畴组成公开(公告)号：US20130240963A1
公开(公告)日：2013-09-19
申请号：US13421963
申请日：2012-03-16
Applicant: Robert Beach , Guenole Jan , Yu-Jen Wang , Witold Kula , Po-Kang Wang
Inventor： Robert Beach , Guenole Jan , Yu-Jen Wang , Witold Kula , Po-Kang Wang
IPC: H01L29/82 , H01L21/8239
CPC classification number: H01L43/08 , G11C11/161 , H01L27/228 , H01L43/12
Abstract: An STT MTJ cell is formed with a magnetic anisotropy of its free and reference layers that is perpendicular to their planes of formation. The reference layer of the cell is an SAF multilayered structure with a single magnetic domain to enhance the bi-stability of the magnetoresistive states of the cell. The free layer of the cell is etched back laterally from the reference layer, so that the fringing stray field of the reference layer is no more than 15% of the coercivity of the free layer and has minimal effect on the free layer.
Abstract translation: 形成具有垂直于其形成平面的游离和参考层的磁各向异性的STT MTJ电池。 单元的参考层是具有单个磁畴的SAF多层结构，以增强单元的磁阻状态的双稳定性。 电池的自由层从参考层横向回蚀刻，使得参考层的边缘杂散场不超过自由层的矫顽力的15％，并且对自由层的影响最小。
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4.发明授权STT-MRAM reference layer having substantially reduced stray field and consisting of a single magnetic domain 有权STT-MRAM参考层具有显着减少的杂散场并由单个磁畴组成公开(公告)号：US08981503B2
公开(公告)日：2015-03-17
申请号：US13421963
申请日：2012-03-16
Applicant: Robert Beach , Guenole Jan , Yu-Jen Wang , Witold Kula , Po-Kang Wang
Inventor： Robert Beach , Guenole Jan , Yu-Jen Wang , Witold Kula , Po-Kang Wang
CPC classification number: H01L43/08 , G11C11/161 , H01L27/228 , H01L43/12
Abstract: An STT MTJ cell is formed with a magnetic anisotropy of its free and reference layers that is perpendicular to their planes of formation. The reference layer of the cell is an SAF multilayered structure with a single magnetic domain to enhance the bi-stability of the magnetoresistive states of the cell. The free layer of the cell is etched back laterally from the reference layer, so that the fringing stray field of the reference layer is no more than 15% of the coercivity of the free layer and has minimal effect on the free layer.
Abstract translation: 形成具有垂直于其形成平面的游离和参考层的磁各向异性的STT MTJ电池。 单元的参考层是具有单个磁畴的SAF多层结构，以增强单元的磁阻状态的双稳定性。 电池的自由层从参考层横向回蚀刻，使得参考层的边缘杂散场不超过自由层的矫顽力的15％，并且对自由层的影响最小。
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5.发明申请Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM 有权用于制造自旋转矩（STT）-RAM的高性能MTJ装置的结构和方法公开(公告)号：US20100065935A1
公开(公告)日：2010-03-18
申请号：US12284066
申请日：2008-09-18
Applicant: Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Po-Kang Wang , Robert Beach , Witold Kula
Inventor： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Po-Kang Wang , Robert Beach , Witold Kula
CPC classification number: H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F41/307 , H01L43/12
Abstract: A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by a NOX process, a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel layer to minimize Jc0, and a Ru capping layer to enhance the spin scattering effect and increase dR/R. Good write margin is achieved by modifying the NOX process to afford a RA less than 10 ohm-μm2 and good read margin is realized with a dR/R of >100% by annealing at 330° C. or higher to form crystalline CoFeB free layers. The NCC thickness is maintained in the 6 to 10 Angstrom range to reduce Rp and avoid Fe(Si) granules from not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A FeSiO layer may be inserted below the Ru layer in the capping layer to prevent the Ru from causing a high damping constant in the upper CoFeB free layer.
Abstract translation: 公开了一种STT-RAM MTJ，其具有通过NOX工艺形成的MgO隧道势垒，具有中间纳米通道层的CoFeB / FeSiO / CoFeB复合自由层以最小化Jc0，以及Ru覆盖层以增强自旋散射效应并增加 dR / R。 通过改变NOX工艺以获得RA小于10欧姆 - μm2的良好的写入余量，并且通过在330℃或更高温度退火以dO / R> 100％实现良好的读取余量以形成结晶CoFeB自由层 。 NCC厚度保持在6至10埃范围内以减少Rp，并避免Fe（Si）颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。 可以在覆盖层中的Ru层下方插入FeSiO层，以防止Ru在上部CoFeB自由层中引起高阻尼常数。
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Patent Agency Ranking
6.发明授权Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM 有权用于制造自旋转矩（STT）-RAM的高性能MTJ装置的结构和方法公开(公告)号：US08138561B2
公开(公告)日：2012-03-20
申请号：US12284066
申请日：2008-09-18
Applicant: Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Po-Kang Wang , Robert Beach , Witold Kula
Inventor： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Po-Kang Wang , Robert Beach , Witold Kula
IPC: H01L29/82
CPC classification number: H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F41/307 , H01L43/12
Abstract: A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by a NOX process, a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel layer to minimize Jc0, and a Ru capping layer to enhance the spin scattering effect and increase dR/R. Good write margin is achieved by modifying the NOX process to afford a RA less than 10 ohm-μm2 and good read margin is realized with a dR/R of >100% by annealing at 330° C. or higher to form crystalline CoFeB free layers. The NCC thickness is maintained in the 6 to 10 Angstrom range to reduce Rp and avoid Fe(Si) granules from not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A FeSiO layer may be inserted below the Ru layer in the capping layer to prevent the Ru from causing a high damping constant in the upper CoFeB free layer.
Abstract translation: 公开了一种STT-RAM MTJ，其具有通过NOX工艺形成的MgO隧道势垒，具有中间纳米通道层的CoFeB / FeSiO / CoFeB复合自由层以最小化Jc0，以及Ru覆盖层以增强自旋散射效应并增加 dR / R。 通过改变NOX工艺以获得RA小于10欧姆 - μm2的良好的写入余量，并且通过在330℃或更高温度退火以dO / R> 100％实现良好的读取余量以形成结晶CoFeB自由层 。 NCC厚度保持在6至10埃范围内以减少Rp，并避免Fe（Si）颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。 可以在覆盖层中的Ru层下方插入FeSiO层，以防止Ru在上部CoFeB自由层中引起高阻尼常数。
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7.发明申请Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application 有权用于制造自旋转矩（STT）-RAM应用的高性能MTJ装置的结构和方法公开(公告)号：US20110014500A1
公开(公告)日：2011-01-20
申请号：US12460412
申请日：2009-07-17
Applicant: Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
Inventor： Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
CPC classification number: H01L43/12 , B82Y25/00 , C23C14/3414 , G11C11/16 , G11C11/161 , H01L43/08 , H01L43/10 , Y10T428/1114
Abstract: A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.
Abstract translation: 公开了一种STT-RAM MTJ，其具有通过自然氧化形成的MgO隧道势垒，并含有氧表面活性剂层以形成更均匀的MgO层和较低的击穿分布百分比。 具有中等纳米通道层的CoFeB / NCC / CoFeB复合自由层使Jc0最小化，同时实现满足64Mb设计要求的热稳定性，写电压，读电压和Hc值。 NCC层在绝缘体基体中具有RM颗粒，其中R是Co，Fe或Ni，M是诸如Si或Al的金属。 NCC厚度保持在最小RM晶粒尺寸周围，以避免RM颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。 可以在自由层中包括第二NCC层和第三CoFeB层，或者可以将第二NCC层插入Ru覆盖层的下方。
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8.发明授权Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application 有权用于制造自旋转矩（STT）-RAM应用的高性能MTJ装置的结构和方法公开(公告)号：US08609262B2
公开(公告)日：2013-12-17
申请号：US12460412
申请日：2009-07-17
Applicant: Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
Inventor： Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
CPC classification number: H01L43/12 , B82Y25/00 , C23C14/3414 , G11C11/16 , G11C11/161 , H01L43/08 , H01L43/10 , Y10T428/1114
Abstract: A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.
Abstract translation: 公开了一种STT-RAM MTJ，其具有通过自然氧化形成的MgO隧道势垒，并含有氧表面活性剂层以形成更均匀的MgO层和较低的击穿分布百分比。 具有中等纳米通道层的CoFeB / NCC / CoFeB复合自由层使Jc0最小化，同时实现满足64Mb设计要求的热稳定性，写电压，读电压和Hc值。 NCC层在绝缘体基体中具有RM颗粒，其中R是Co，Fe或Ni，M是诸如Si或Al的金属。 NCC厚度保持在最小RM晶粒尺寸周围，以避免RM颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。 可以在自由层中包括第二NCC层和第三CoFeB层，或者可以将第二NCC层插入Ru覆盖层的下方。
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公开(公告)号：US08853749B2
公开(公告)日：2014-10-07
申请号：US13362669
申请日：2012-01-31
Applicant: Alexander Lidow , Jianjun Cao , Robert Beach , Robert Strittmatter , Guang Y. Zhao , Alana Nakata
Inventor： Alexander Lidow , Jianjun Cao , Robert Beach , Robert Strittmatter , Guang Y. Zhao , Alana Nakata
IPC: H01L29/76 , H01L21/336 , H01L29/423 , H01L29/778 , H01L29/66 , H01L21/265 , H01L29/20
CPC classification number: H01L21/26586 , H01L21/26546 , H01L29/1066 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/7787
Abstract: A self-aligned transistor gate structure that includes an ion-implanted portion of gate material surrounded by non-implanted gate material on each side. The gate structure may be formed, for example, by applying a layer of GaN material over an AlGaN barrier layer and implanting a portion of the GaN layer to create the gate structure that is laterally surrounded by the GaN layer.
Abstract translation: 一种自对准的晶体管栅极结构，其包括在每侧由非植入栅极材料包围的栅极材料的离子注入部分。 栅极结构可以例如通过在AlGaN阻挡层上施加GaN材料层并且注入GaN层的一部分以形成由GaN层横向包围的栅极结构来形成。
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10.发明授权公开(公告)号：US08699474B2
公开(公告)日：2014-04-15
申请号：US11622161
申请日：2007-01-11
Applicant: Robert Beach
Inventor： Robert Beach
CPC classification number: H04W84/12 , H04L12/4625 , H04L29/04 , H04L69/08 , H04L69/18 , H04W12/02 , H04W16/26 , H04W60/00 , H04W74/00 , H04W88/08 , H04W88/085 , H04W88/12
Abstract: A wireless local area network is provided with simplified RF ports which are configured to provide lower level media access control functions. Higher level media access control functions and management functions are provided with a system having a cell controller, which may service one or more RF ports. Mobile units can also be configured with the higher level media access control functions being performed in a host processor.
Abstract translation: 无线局域网提供有简化的RF端口，其被配置为提供较低级媒体访问控制功能。 具有高级媒体访问控制功能和管理功能的系统具有可以服务于一个或多个RF端口的小区控制器的系统。 移动单元还可以配置在主处理器中执行的更高级媒体访问控制功能。
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