公开(公告)号：US08853749B2

公开(公告)日：2014-10-07

申请号：US13362669

申请日：2012-01-31

Applicant: Alexander Lidow ,  Jianjun Cao ,  Robert Beach ,  Robert Strittmatter ,  Guang Y. Zhao ,  Alana Nakata

Inventor： Alexander Lidow ,  Jianjun Cao ,  Robert Beach ,  Robert Strittmatter ,  Guang Y. Zhao ,  Alana Nakata

IPC: H01L29/76 ,  H01L21/336 ,  H01L29/423 ,  H01L29/778 ,  H01L29/66 ,  H01L21/265 ,  H01L29/20

CPC classification number: H01L21/26586 ,  H01L21/26546 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787

Abstract: A self-aligned transistor gate structure that includes an ion-implanted portion of gate material surrounded by non-implanted gate material on each side. The gate structure may be formed, for example, by applying a layer of GaN material over an AlGaN barrier layer and implanting a portion of the GaN layer to create the gate structure that is laterally surrounded by the GaN layer.

Abstract translation: 一种自对准的晶体管栅极结构，其包括在每侧由非植入栅极材料包围的栅极材料的离子注入部分。 栅极结构可以例如通过在AlGaN阻挡层上施加GaN材料层并且注入GaN层的一部分以形成由GaN层横向包围的栅极结构来形成。

公开(公告)号：US08699474B2

公开(公告)日：2014-04-15

申请号：US11622161

申请日：2007-01-11

Applicant: Robert Beach

Inventor： Robert Beach

IPC: H04W4/00 ,  H04W84/12

CPC classification number: H04W84/12 ,  H04L12/4625 ,  H04L29/04 ,  H04L69/08 ,  H04L69/18 ,  H04W12/02 ,  H04W16/26 ,  H04W60/00 ,  H04W74/00 ,  H04W88/08 ,  H04W88/085 ,  H04W88/12

Abstract: A wireless local area network is provided with simplified RF ports which are configured to provide lower level media access control functions. Higher level media access control functions and management functions are provided with a system having a cell controller, which may service one or more RF ports. Mobile units can also be configured with the higher level media access control functions being performed in a host processor.

Abstract translation: 无线局域网提供有简化的RF端口，其被配置为提供较低级媒体访问控制功能。 具有高级媒体访问控制功能和管理功能的系统具有可以服务于一个或多个RF端口的小区控制器的系统。 移动单元还可以配置在主处理器中执行的更高级媒体访问控制功能。

公开(公告)号：US08697581B2

公开(公告)日：2014-04-15

申请号：US12217830

申请日：2008-07-09

Applicant: Robert Beach ,  Paul Bridger

Inventor： Robert Beach ,  Paul Bridger

IPC: H01L21/302

CPC classification number: H01L29/7813 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/51 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66734 ,  H01L29/7787 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/7835

Abstract: A III-nitride trench device has a vertical conduction region with an interrupted conduction channel when the device is not on, providing an enhancement mode device. The trench structure may be used in a vertical conduction or horizontal conduction device. A gate dielectric provides improved performance for the device by being capable of withstanding higher electric field or manipulating the charge in the conduction channel. A passivation of the III-nitride material decouples the dielectric from the device to permit lower dielectric constant materials to be used in high power applications.

Abstract translation: III型氮化物沟槽器件在器件未导通时具有具有中断的导通通道的垂直导电区域，提供增强型器件。 沟槽结构可以用在垂直传导或水平传导装置中。 门电介质通过能够承受更高的电场或操纵传导通道中的电荷而为器件提供改进的性能。 III族氮化物材料的钝化将电介质与器件分离，以允许较低的介电常数材料用于高功率应用。

公开(公告)号：US20130240963A1

公开(公告)日：2013-09-19

申请号：US13421963

申请日：2012-03-16

Applicant: Robert Beach ,  Guenole Jan ,  Yu-Jen Wang ,  Witold Kula ,  Po-Kang Wang

Inventor： Robert Beach ,  Guenole Jan ,  Yu-Jen Wang ,  Witold Kula ,  Po-Kang Wang

IPC: H01L29/82 ,  H01L21/8239

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/12

Abstract: An STT MTJ cell is formed with a magnetic anisotropy of its free and reference layers that is perpendicular to their planes of formation. The reference layer of the cell is an SAF multilayered structure with a single magnetic domain to enhance the bi-stability of the magnetoresistive states of the cell. The free layer of the cell is etched back laterally from the reference layer, so that the fringing stray field of the reference layer is no more than 15% of the coercivity of the free layer and has minimal effect on the free layer.

Abstract translation: 形成具有垂直于其形成平面的游离和参考层的磁各向异性的STT MTJ电池。 单元的参考层是具有单个磁畴的SAF多层结构，以增强单元的磁阻状态的双稳定性。 电池的自由层从参考层横向回蚀刻，使得参考层的边缘杂散场不超过自由层的矫顽力的15％，并且对自由层的影响最小。

公开(公告)号：US08441030B2

公开(公告)日：2013-05-14

申请号：US11238206

申请日：2005-09-29

Applicant: Robert Beach

Inventor： Robert Beach

IPC: H01L29/66 ,  H01L29/74

CPC classification number: H01L29/7786 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/872

Abstract: A III-nitride power semiconductor device that includes a plurality of III-nitride heterojunctions.

Abstract translation: 一种III族氮化物功率半导体器件，其包括多个III族氮化物异质结。

公开(公告)号：US08416735B2

公开(公告)日：2013-04-09

申请号：US10649207

申请日：2003-08-27

Applicant: Robert Beach

Inventor： Robert Beach

IPC: H04W4/00

CPC classification number: H04W88/06 ,  H04W4/18 ,  H04W52/288 ,  H04W84/10 ,  H04W84/12 ,  H04W88/04 ,  H04W92/10

Abstract: A system is provided with mobile units that are arranged to conduct wireless data communications with access points following a first protocol, such as IEEE standard 802.11. The mobile units are further arranged for modified protocol communications with peripheral devices that permanently associate with a mobile unit.

Abstract translation: 为系统提供移动单元，移动单元被安排为按照诸如IEEE标准802.11之类的第一协议进行与接入点的无线数据通信。 移动单元还被布置成用于与与移动单元永久关联的外围设备的修改的协议通信。

公开(公告)号：US08350294B2

公开(公告)日：2013-01-08

申请号：US12756906

申请日：2010-04-08

Applicant: Alexander Lidow ,  Robert Beach ,  Jianjun Cao ,  Alana Nakata ,  Guang Yuan Zhao

Inventor： Alexander Lidow ,  Robert Beach ,  Jianjun Cao ,  Alana Nakata ,  Guang Yuan Zhao

IPC: H01L29/66

CPC classification number: H01L29/802 ,  H01L29/2003 ,  H01L29/66522

Abstract: A MISFET, such as a GaN transistor, with low gate leakage. In one embodiment, the gate leakage is reduced with a compensated GaN layer below the gate contact and above the barrier layer. In another embodiment, the gate leakage is reduced by employing a semi-insulating layer below the gate contact and above the barrier layer.

Abstract translation: 具有低栅极泄漏的MISFET，例如GaN晶体管。 在一个实施例中，栅极泄漏随着栅极接触下方的补偿GaN层和势垒层上方而减小。 在另一个实施例中，通过在栅极接触之下和阻挡层之上采用半绝缘层来减小栅极泄漏。

公开(公告)号：US08138561B2

公开(公告)日：2012-03-20

申请号：US12284066

申请日：2008-09-18

Applicant: Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Po-Kang Wang ,  Robert Beach ,  Witold Kula

Inventor： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Po-Kang Wang ,  Robert Beach ,  Witold Kula

IPC: H01L29/82

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/12

Abstract: A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by a NOX process, a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel layer to minimize Jc0, and a Ru capping layer to enhance the spin scattering effect and increase dR/R. Good write margin is achieved by modifying the NOX process to afford a RA less than 10 ohm-μm2 and good read margin is realized with a dR/R of >100% by annealing at 330° C. or higher to form crystalline CoFeB free layers. The NCC thickness is maintained in the 6 to 10 Angstrom range to reduce Rp and avoid Fe(Si) granules from not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A FeSiO layer may be inserted below the Ru layer in the capping layer to prevent the Ru from causing a high damping constant in the upper CoFeB free layer.

Abstract translation: 公开了一种STT-RAM MTJ，其具有通过NOX工艺形成的MgO隧道势垒，具有中间纳米通道层的CoFeB / FeSiO / CoFeB复合自由层以最小化Jc0，以及Ru覆盖层以增强自旋散射效应并增加 dR / R。 通过改变NOX工艺以获得RA小于10欧姆 - μm2的良好的写入余量，并且通过在330℃或更高温度退火以dO / R> 100％实现良好的读取余量以形成结晶CoFeB自由层 。 NCC厚度保持在6至10埃范围内以减少Rp，并避免Fe（Si）颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。 可以在覆盖层中的Ru层下方插入FeSiO层，以防止Ru在上部CoFeB自由层中引起高阻尼常数。

公开(公告)号：US08050240B2

公开(公告)日：2011-11-01

申请号：US11147649

申请日：2005-06-08

Applicant: Robert Beach

Inventor： Robert Beach

IPC: H04W4/00

CPC classification number: H04W84/12 ,  H04L12/4625 ,  H04L29/04 ,  H04L69/08 ,  H04L69/18 ,  H04W12/02 ,  H04W12/06 ,  H04W60/00 ,  H04W74/00 ,  H04W84/18

Abstract: A wireless local area network is provided with simplified RF ports which are configured to provide lower level media access control functions. Higher level media access control functions are provided in a cell controller, which may service one or more RF ports that are capable operating with at least two wireless local area subnetworks occupying common physical space. Mobile units can also be configured with the higher level media access control functions being performed in a host processor.

Abstract translation: 无线局域网提供有简化的RF端口，其被配置为提供较低级媒体访问控制功能。 更高级别的媒体访问控制功能被提供在小区控制器中，小区控制器可以为能够与占用公共物理空间的至少两个无线局域网子网络一起操作的一个或多个RF端口提供服务。 移动单元还可以配置在主处理器中执行的更高级媒体访问控制功能。

公开(公告)号：US20110241019A1

公开(公告)日：2011-10-06

申请号：US13160211

申请日：2011-06-14

Applicant: Robert Beach ,  Zhi He ,  Jianjun Cao

Inventor： Robert Beach ,  Zhi He ,  Jianjun Cao

IPC: H01L29/20

CPC classification number: H01L29/2003 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/28581 ,  H01L29/205 ,  H01L29/401 ,  H01L29/4916 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/772 ,  H01L29/7786 ,  H01L29/7787

Abstract: A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.

Abstract translation: 一种III族氮化物半导体器件，其包括在栅极电极和栅极电介质之间的势垒体。