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    Complimentary nitride transistors vertical and common drain
    2.
    发明授权
    Complimentary nitride transistors vertical and common drain 有权
    不间断的氮化物晶体管垂直和普通漏极

    公开(公告)号：US08193612B2

    公开(公告)日：2012-06-05

    申请号：US11056689

    申请日：2005-02-11

    Applicant: Robert Beach ,  Paul Bridger

    Inventor： Robert Beach ,  Paul Bridger

    IPC: H01L29/20 ,  H01L31/0304

    CPC classification number: H01L27/0605 ,  H01L29/2003

    Abstract: A semiconductor device and a method for manufacturing the device are disclosed in which the semiconductor device includes ohmic contacts on different planes and the method for manufacturing the device includes etching a semiconductor stack of different conductivity semiconductor layers in successive steps to create a first opening of a first width in a first semiconductor layer to expose another semiconductor layer, and then a second opening of a narrower width in the another layer, whereby a portion of the another layer remains exposed for receiving an ohmic contact.

    Abstract translation: 公开了一种用于制造器件的半导体器件和方法，其中半导体器件在不同平面上包括欧姆接触，并且该器件的制造方法包括在连续步骤中蚀刻不同导电半导体层的半导体叠层以产生第一开口 在第一半导体层中的第一宽度以暴露另一半导体层，然后在另一层中具有较窄宽度的第二开口，由此另一层的一部分保持暴露以接收欧姆接触。

    III-nitride semiconductor device with trench structure
    4.
    发明授权
    III-nitride semiconductor device with trench structure 有权
    具有沟槽结构的III族氮化物半导体器件

    公开(公告)号：US08697581B2

    公开(公告)日：2014-04-15

    申请号：US12217830

    申请日：2008-07-09

    Applicant: Robert Beach ,  Paul Bridger

    Inventor： Robert Beach ,  Paul Bridger

    IPC: H01L21/302

    CPC classification number: H01L29/7813 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/51 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66734 ,  H01L29/7787 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/7835

    Abstract: A III-nitride trench device has a vertical conduction region with an interrupted conduction channel when the device is not on, providing an enhancement mode device. The trench structure may be used in a vertical conduction or horizontal conduction device. A gate dielectric provides improved performance for the device by being capable of withstanding higher electric field or manipulating the charge in the conduction channel. A passivation of the III-nitride material decouples the dielectric from the device to permit lower dielectric constant materials to be used in high power applications.

    Abstract translation: III型氮化物沟槽器件在器件未导通时具有具有中断的导通通道的垂直导电区域，提供增强型器件。 沟槽结构可以用在垂直传导或水平传导装置中。 门电介质通过能够承受更高的电场或操纵传导通道中的电荷而为器件提供改进的性能。 III族氮化物材料的钝化将电介质与器件分离，以允许较低的介电常数材料用于高功率应用。

    III-nitride device and method with variable epitaxial growth direction
    5.
    发明授权
    III-nitride device and method with variable epitaxial growth direction 有权
    III族氮化物器件和具有可变外延生长方向的方法

    公开(公告)号：US07491627B2

    公开(公告)日：2009-02-17

    申请号：US11894850

    申请日：2007-08-22

    Applicant: Robert Beach ,  Paul Bridger

    Inventor： Robert Beach ,  Paul Bridger

    IPC: H01L21/36 ,  H01L21/20

    CPC classification number: H01L29/66325 ,  H01L29/2003

    Abstract: A semiconductor device composed of III-nitride materials is produced with epitaxial growth that permits vertical and lateral growth geometries to improve device characteristics. The resulting device has a greater breakdown voltage due to the greater integrity of the semiconductor material structure since no ion implantation processes are used. The epitaxially grown layers also exhibit greater thermal conductivity for improved operation with power semiconductor devices. The device may include a laterally grown charge compensated area to form a superjunction device. The resulting device may be bidirectional and have improved breakdown voltage in addition to higher current capacity for a given voltage rating.

    Abstract translation: 由III族氮化物材料制成的半导体器件由外延生长制成，允许垂直和侧向生长几何形状来改善器件特性。 由于没有使用离子注入工艺，所以由于半导体材料结构的更高的完整性，所得到的器件具有更大的击穿电压。 外延生长的层还表现出更大的导热性，以改善功率半导体器件的工作。 该装置可以包括横向生长的电荷补偿区域以形成超连接装置。 所得到的器件可以是双向的，并且除了给定额定电压的较高电流容量之外还具有改进的击穿电压。

    Complimentary lateral nitride transistors
    6.
    发明申请
    Complimentary lateral nitride transistors 有权
    免费横向氮化物晶体管

    公开(公告)号：US20050180231A1

    公开(公告)日：2005-08-18

    申请号：US11056833

    申请日：2005-02-11

    Applicant: Robert Beach ,  Paul Bridger

    Inventor： Robert Beach ,  Paul Bridger

    IPC: G11C7/00 ,  H01L27/06

    CPC classification number: H01L27/0605

    Abstract: A semiconductor device which includes a laterally extending stack of laterally adjacent conductive semiconductor regions formed over a support surface of a substrate, and a method for fabricating the device.

    Abstract translation: 一种半导体器件，其包括形成在衬底的支撑表面上的横向相邻的导电半导体区域的横向延伸堆叠，以及用于制造该器件的方法。

    Complimentary nitride transistors vertical and common drain
    7.
    发明申请
    Complimentary nitride transistors vertical and common drain 有权
    不间断的氮化物晶体管垂直和普通漏极

    公开(公告)号：US20050179096A1

    公开(公告)日：2005-08-18

    申请号：US11056689

    申请日：2005-02-11

    Applicant: Robert Beach ,  Paul Bridger

    Inventor： Robert Beach ,  Paul Bridger

    IPC: H01L21/336 ,  H01L27/06 ,  H01L29/20 ,  H01L29/76

    CPC classification number: H01L27/0605 ,  H01L29/2003

    Abstract: A semiconductor device and a method for manufacturing the device are disclosed in which the semiconductor device includes ohmic contacts on different planes and the method for manufacturing the device includes etching a semiconductor stack of different conductivity semiconductor layers in successive steps to create a first opening of a first width in a first semiconductor layer to expose another semiconductor layer, and then a second opening of a narrower width in the another layer, whereby a portion of the another layer remains exposed for receiving an ohmic contact.

    Abstract translation: 公开了一种用于制造器件的半导体器件和方法，其中半导体器件在不同平面上包括欧姆接触，并且该器件的制造方法包括在连续步骤中蚀刻不同导电半导体层的半导体叠层以产生第一开口 在第一半导体层中的第一宽度以暴露另一半导体层，然后在另一层中具有较窄宽度的第二开口，由此另一层的一部分保持暴露以接收欧姆接触。

    III-nitride monolithic IC
    9.
    发明授权
    III-nitride monolithic IC 有权
    III族氮化物单片IC

    公开(公告)号：US09142637B2

    公开(公告)日：2015-09-22

    申请号：US13027912

    申请日：2011-02-15

    Applicant: Robert Beach ,  Paul Bridger

    Inventor： Robert Beach ,  Paul Bridger

    IPC: H01L21/76 ,  H01L29/66 ,  H01L21/762 ,  H01L29/20

    CPC classification number: H01L29/66462 ,  H01L21/76 ,  H01L21/7605 ,  H01L21/76264 ,  H01L21/76289 ,  H01L29/2003 ,  Y10S438/93

    Abstract: III-nitride materials are used to form isolation structures in high voltage ICs to isolate low voltage and high voltage functions on a monolithic power IC. Critical performance parameters are improved using III-nitride materials, due to the improved breakdown performance and thermal performance available in III-nitride semiconductor materials. An isolation structure may include a dielectric layer that is epitaxially grown using a III-nitride material to provide a simplified manufacturing process. The process permits the use of planar manufacturing technology to avoid additional manufacturing costs. High voltage power ICs have improved performance in a smaller package in comparison to corresponding silicon structures.

    Abstract translation: III族氮化物材料用于在高电压IC中形成隔离结构，以隔离单片电源IC上的低电压和高电压功能。 由于III族氮化物半导体材料的击穿性能和热性能的改善，使用III族氮化物材料改善了关键性能参数。 隔离结构可以包括使用III族氮化物材料外延生长以提供简化的制造工艺的电介质层。 该过程允许使用平面制造技术来避免额外的制造成本。 与相应的硅结构相比，高压功率IC在较小的封装中具有改进的性能。

    Complimentary lateral III-nitride transistors
    10.
    发明授权
    Complimentary lateral III-nitride transistors 有权
    免费的侧面III族氮化物晶体管

    公开(公告)号：US07510957B2

    公开(公告)日：2009-03-31

    申请号：US11633304

    申请日：2006-12-04

    Applicant: Robert Beach ,  Paul Bridger

    Inventor： Robert Beach ,  Paul Bridger

    IPC: H01L21/28 ,  H01L21/3205

    CPC classification number: H01L27/0605

    Abstract: A semiconductor device which includes a laterally extending stack of laterally adjacent conductive semiconductor regions formed over a support surface of a substrate, and a method for fabricating the device.

    Abstract translation: 一种半导体器件，其包括形成在衬底的支撑表面上的横向相邻的导电半导体区域的横向延伸堆叠，以及用于制造该器件的方法。

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