公开(公告)号：US08031441B2

公开(公告)日：2011-10-04

申请号：US11803057

申请日：2007-05-11

申请人： Kunliang Zhang ,  Min Li ,  Moris Dovek ,  Yue Liu

发明人： Kunliang Zhang ,  Min Li ,  Moris Dovek ,  Yue Liu

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a M/S, S/M, M/S/M, S/M/S, M/S/M/S/M, or a multilayer (M/S/M)n configuration where n is an integer ≧1. The pinned layer preferably has an AP2/coupling/AP1 configuration wherein the AP2 portion is a FCC trilayer represented by CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where y is 0 to 60 atomic %, and z is 75 to 100 atomic %. In one embodiment, M is Cu with a thickness from 0.5 to 50 Angstroms and S is ZnO with a thickness of 1 to 50 Angstroms. The S layer may be doped with one or more elements. The dR/R ratio of the spin valve is increased to 10% or greater while maintaining acceptable EM and RA performance.

摘要翻译： 公开了具有由至少一个金属（M）层和至少一个半导体或半金属（S）层组成的复合间隔层的CPP-GMR自旋阀。 复合间隔物可以具有M / S，S / M，M / S / M，S / M / S，M / S / M / S / M或多层（M / S / M） 是整数≧1。 钉扎层优选具有AP2 /耦合/ AP1配置，其中AP2部分是由CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z）表示的FCC三层，其中y为0至60原子％ ，z为75〜100原子％。 在一个实施方案中，M是厚度为0.5至50埃的Cu，S是厚度为1至50埃的ZnO。 S层可以掺杂有一个或多个元素。 自旋阀的dR / R比提高到10％以上，同时保持可接受的EM和RA性能。

公开(公告)号：US20120009337A1

公开(公告)日：2012-01-12

申请号：US13200013

申请日：2011-09-15

申请人： Kunliang Zhang ,  Min Li ,  Moris Dovek ,  Yue Liu

发明人： Kunliang Zhang ,  Min Li ,  Moris Dovek ,  Yue Liu

IPC分类号： G11B5/31 ,  C23C14/34

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a M/S, S/M, M/S/M, S/M/S, M/S/M/S/M, or a multilayer (M/S/M)n configuration where n is an integer≧1. The pinned layer preferably has an AP2/coupling/AP1 configuration wherein the AP2 portion is a FCC trilayer represented by CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where y is 0 to 60 atomic %, and z is 75 to 100 atomic %. In one embodiment, M is Cu with a thickness from 0.5 to 50 Angstroms and S is ZnO with a thickness of 1 to 50 Angstroms. The S layer may be doped with one or more elements. The dR/R ratio of the spin valve is increased to 10% or greater while maintaining acceptable EM and RA performance.

摘要翻译： 公开了具有由至少一个金属（M）层和至少一个半导体或半金属（S）层组成的复合间隔层的CPP-GMR自旋阀。 复合间隔物可以具有M / S，S / M，M / S / M，S / M / S，M / S / M / S / M或多层（M / S / M） 是整数≧1。 钉扎层优选具有AP2 /耦合/ AP1配置，其中AP2部分是由CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z）表示的FCC三层，其中y为0至60原子％ ，z为75〜100原子％。 在一个实施方案中，M是厚度为0.5至50埃的Cu，S是厚度为1至50埃的ZnO。 S层可以掺杂有一个或多个元素。 自旋阀的dR / R比提高到10％以上，同时保持可接受的EM和RA性能。

公开(公告)号：US08978240B2

公开(公告)日：2015-03-17

申请号：US13200013

申请日：2011-09-15

申请人： Kunliang Zhang ,  Min Li ,  Moris Dovek ,  Yue Liu

发明人： Kunliang Zhang ,  Min Li ,  Moris Dovek ,  Yue Liu

IPC分类号： G11B5/127 ,  H04R31/00 ,  G11B5/39 ,  B82Y10/00 ,  B82Y25/00

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a M/S, S/M, M/S/M, S/M/S, M/S/M/S/M, or a multilayer (M/S/M)n configuration where n is an integer≧1. The pinned layer preferably has an AP2/coupling/AP1 configuration wherein the AP2 portion is a FCC trilayer represented by CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where y is 0 to 60 atomic %, and z is 75 to 100 atomic %. In one embodiment, M is Cu with a thickness from 0.5 to 50 Angstroms and S is ZnO with a thickness of 1 to 50 Angstroms. The S layer may be doped with one or more elements. The dR/R ratio of the spin valve is increased to 10% or greater while maintaining acceptable EM and RA performance.

摘要翻译： 公开了具有由至少一个金属（M）层和至少一个半导体或半金属（S）层组成的复合间隔层的CPP-GMR自旋阀。 复合间隔物可以具有M / S，S / M，M / S / M，S / M / S，M / S / M / S / M或多层（M / S / M） 是整数≧1。 钉扎层优选具有AP2 /耦合/ AP1配置，其中AP2部分是由CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z）表示的FCC三层，其中y为0至60原子％ ，z为75〜100原子％。 在一个实施方案中，M是厚度为0.5至50埃的Cu，S是厚度为1至50埃的ZnO。 S层可以掺杂有一个或多个元素。 自旋阀的dR / R比提高到10％以上，同时保持可接受的EM和RA性能。

公开(公告)号：US20080278864A1

公开(公告)日：2008-11-13

申请号：US11803057

申请日：2007-05-11

申请人： Kunliang Zhang ,  Min Li ,  Moris Dovek ,  Yue Liu

发明人： Kunliang Zhang ,  Min Li ,  Moris Dovek ,  Yue Liu

IPC分类号： G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a M/S, S/M, M/S/M, S/M/S, M/S/M/S/M, or a multilayer (M/S/M)n configuration where n is an integer ≧1. The pinned layer preferably has an AP2/coupling/AP1 configuration wherein the AP2 portion is a FCC trilayer represented by CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where y is 0 to 60 atomic %, and z is 75 to 100 atomic %. In one embodiment, M is Cu with a thickness from 0.5 to 50 Angstroms and S is ZnO with a thickness of 1 to 50 Angstroms. The S layer may be doped with one or more elements. The dR/R ratio of the spin valve is increased to 10% or greater while maintaining acceptable EM and RA performance.

摘要翻译： 公开了具有由至少一个金属（M）层和至少一个半导体或半金属（S）层组成的复合间隔层的CPP-GMR自旋阀。 复合间隔物可以具有M / S，S / M，M / S / M，S / M / S，M / S / M / S / M或多层（M / S / M） 配置，其中n是整数> = 1。 被钉扎层优选具有AP2 /偶联/ AP1构型，其中AP2部分是由CoZi Fe（100-Z）/ Fe Y 其中y为0至60原子％，以及（C 1 -C 6） z为75〜100原子％。 在一个实施方案中，M是厚度为0.5至50埃的Cu，S是厚度为1至50埃的ZnO。 S层可以掺杂有一个或多个元素。 自旋阀的dR / R比提高到10％以上，同时保持可接受的EM和RA性能。

公开(公告)号：US09222994B2

公开(公告)日：2015-12-29

申请号：US13200148

申请日：2011-09-19

申请人： Yuchen Zhou ,  Kunliang Zhang ,  Min Li ,  Kenichi Takano ,  Joe Smyth ,  Moris Dovek ,  Akihiko Takeo ,  Tomomi Funayama ,  Masahiro Takashita ,  Masayuki Takagishi

发明人： Yuchen Zhou ,  Kunliang Zhang ,  Min Li ,  Kenichi Takano ,  Joe Smyth ,  Moris Dovek ,  Akihiko Takeo ,  Tomomi Funayama ,  Masahiro Takashita ,  Masayuki Takagishi

IPC分类号： G01R23/02 ,  G01R33/12 ,  G11B5/39 ,  H01L43/08 ,  G11C11/16

CPC分类号： G01R33/1284 ,  G11B5/3903 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08

摘要： A method for measuring the frequency in a spin torque oscillator having at least a magnetic oscillation layer (MOL), junction layer, and magnetic reference layer (MRL) is disclosed. In a first embodiment, a small in-plane magnetic field is applied to the STO after a DC current is applied to excite the MOL into an oscillation state. The MRL has a perpendicular magnetization that is tilted slightly to give an in-plane magnetization component to serve as a reference layer for measuring the oscillation frequency of the MOL in-plane magnetization component. An AC voltage change is produced in the DC current as a result of variable STO resistance and directly correlates to MOL oscillation frequency. Alternatively, a field having both perpendicular and in-plane components may be applied externally or by forming the STO between two magnetic poles thereby producing an in-plane magnetization reference component in the MRL.

摘要翻译： 公开了一种用于测量至少具有磁振荡层（MOL），结层和磁参考层（MRL）的自旋转矩振荡器中的频率的方法。 在第一实施例中，在施加DC电流以将MOL激发到振荡状态之后，将小的面内磁场施加到STO。 MRL具有稍微倾斜的垂直磁化，以产生面内磁化分量，用作用于测量MOL面内磁化分量的振荡频率的参考层。 作为可变STO电阻的结果，在DC电流中产生AC电压变化，并直接与MOL振荡频率相关。 或者，具有垂直和平面内部分量的场可以在外部施加，或者通过在两个磁极之间形成STO，从而在MRL中产生面内磁化参考分量。

公开(公告)号：US20130069626A1

公开(公告)日：2013-03-21

申请号：US13200148

申请日：2011-09-19

申请人： Yuchen Zhou ,  Kunliang Zhang ,  Min Li ,  Kenichi Takano ,  Joe Smyth ,  Moris Dovek ,  Akihiko Takeo ,  Tomomi Funayama ,  Masahiro Takashita ,  Masayuki Takagishi

发明人： Yuchen Zhou ,  Kunliang Zhang ,  Min Li ,  Kenichi Takano ,  Joe Smyth ,  Moris Dovek ,  Akihiko Takeo ,  Tomomi Funayama ,  Masahiro Takashita ,  Masayuki Takagishi

IPC分类号： G01R23/02

CPC分类号： G01R33/1284 ,  G11B5/3903 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08

摘要： A method for measuring the frequency in a spin torque oscillator having at least a magnetic oscillation layer (MOL), junction layer, and magnetic reference layer (MRL) is disclosed. In a first embodiment, a small in-plane magnetic field is applied to the STO after a DC current is applied to excite the MOL into an oscillation state. The MRL has a perpendicular magnetization that is tilted slightly to give an in-plane magnetization component to serve as a reference layer for measuring the oscillation frequency of the MOL in-plane magnetization component. An AC voltage change is produced in the DC current as a result of variable STO resistance and directly correlates to MOL oscillation frequency. Alternatively, a field having both perpendicular and in-plane components may be applied externally or by forming the STO between two magnetic poles thereby producing an in-plane magnetization reference component in the MRL.

公开(公告)号：US07382584B2

公开(公告)日：2008-06-03

申请号：US11175932

申请日：2005-07-06

申请人： Yue Liu ,  Daniel G. Abels ,  Moris Dovek ,  Min Li ,  Pokang Wang ,  Mao-Min Chen

发明人： Yue Liu ,  Daniel G. Abels ,  Moris Dovek ,  Min Li ,  Pokang Wang ,  Mao-Min Chen

IPC分类号： G11B5/39 ,  F25D23/12 ,  H01L35/28 ,  G01R33/02

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  G11B5/3133 ,  G11B2005/3996

摘要： The problem of increasing the output signal from a CCP-CPP GMR device without having it overheat has been overcome by placing materials that have different thermoelectric potentials on opposing sides of the spacer layer. Heat from the hot junction is removed at the substrate, which acts as a heat sink, resulting in a net local cooling of the confined current spacer layer, enabling it to operate at both higher input voltage increased reliability.

摘要翻译： 通过在间隔层的相对侧放置具有不同热电势的材料来克服增加来自CCP-CPP GMR器件而不使其过热的输出信号的问题。 来自热接点的热量在基板处被去除，其作为散热器，导致限流电流间隔层的局部局部冷却，使其能够在较高的输入电压增加的可靠性下工作。

公开(公告)号：US20070008656A1

公开(公告)日：2007-01-11

申请号：US11175932

申请日：2005-07-06

申请人： Yue Liu ,  Daniel Abels ,  Moris Dovek ,  Min Li ,  Pokang Wang ,  Mao-Min Chen

发明人： Yue Liu ,  Daniel Abels ,  Moris Dovek ,  Min Li ,  Pokang Wang ,  Mao-Min Chen

IPC分类号： G11B5/33

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  G11B5/3133 ,  G11B2005/3996

摘要： The problem of increasing the output signal from a CCP-CPP GMR device without having it overheat has been overcome by placing materials that have different thermoelectric potentials on opposing sides of the spacer layer. Heat from the hot junction is removed at the substrate, which acts as a heat sink, resulting in a net local cooling of the confined current spacer layer, enabling it to operate at both higher input voltage increased reliability.

摘要翻译： 通过在间隔层的相对侧放置具有不同热电势的材料来克服增加来自CCP-CPP GMR器件而不使其过热的输出信号的问题。 来自热接点的热量在基板处被去除，其作为散热器，导致限流电流间隔层的局部局部冷却，使其能够在较高的输入电压增加的可靠性下工作。

公开(公告)号：US08881376B2

公开(公告)日：2014-11-11

申请号：US13199179

申请日：2011-08-22

申请人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

发明人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

IPC分类号： G11B5/127 ,  G11B5/21 ,  G11B5/31 ,  G11B5/147

CPC分类号： G11B5/3113 ,  G11B5/1278 ,  G11B5/147 ,  G11B5/3146 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A method of manufacturing a PMR writer is disclosed that minimizes pole erasure during non-writing and maximize write field during writing by including an AFM-FM phase change material spacer that is in an AFM state during non-writing and switches to a FM state by heating during writing. The main pole layer including the write pole may be formed as a laminated structure by a sputter deposition process wherein a plurality of “n” ferromagnetic layers and “n−1” AFM-FM phase change material layers are laid down in an alternating manner. The AFM-FM phase change material is preferably a FeRh or FeRhX alloy (X=Pt, Pd, or Ir) having a Rh content >35 atomic %, and may also be used as a flux gate to prevent yoke flux from leaking into the write pole tip.

摘要翻译： 公开了一种制造PMR写入器的方法，其在非写入期间使磁极擦除最小化，并且在写入期间使写入场最大化，包括在非写入期间处于AFM状态的AFM-FM相变材料间隔物，并且通过 书写过程中加热。 包括写极的主极层可以通过溅射沉积工艺形成为层叠结构，其中以交替的方式放置多个“n”个铁磁层和“n-1”个AFM-FM相变材料层。 AFM-FM相变材料优选为Rh含量> 35原子％的FeRh或FeRhX合金（X = Pt，Pd或Ir），并且还可以用作磁通门以防止磁轭焊剂泄漏到 写极点。

公开(公告)号：US20120087042A1

公开(公告)日：2012-04-12

申请号：US13199188

申请日：2011-08-22

申请人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

发明人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

IPC分类号： G11B5/147 ,  G11B5/60

CPC分类号： G11B5/3113 ,  G11B5/1278 ,  G11B5/147 ,  G11B5/3146 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A PMR writer is disclosed that minimizes pole erasure during non-writing and maximize write field during writing through an AFM-FM phase change material that is in an antiferromagnetic (AFM) state during non-writing and switches to a ferromagnetic (FM) state by heating during writing. The main pole layer including the write pole may be comprised of a laminated structure having a plurality of “n” ferromagnetic layers and “n−1” AFM-FM phase change material layers arranged in an alternating manner. The AFM-FM phase change material is preferably a FeRh, FeRhPt, FeRhPd, or FeRhIr and may also be used as a flux gate to prevent yoke flux from leaking into the write pole tip. Heating for the AFM to FM transition is provided by write coils and/or a coil located near the AFM-FM phase change material to enable faster transition times.

摘要翻译： 公开了一种PMR写入器，其在非写入期间最小化磁极擦除，并且在写入期间通过在非写入期间处于反铁磁（AFM）状态的AFM-FM相变材料中写入期间最大化写入场并且通过以下方式切换到铁磁（FM）状态： 书写过程中加热。 包括写极的主极层可以由具有多个“n”个铁磁层和“n-1”个AFM-FM相变材料层的交替排列的层压结构构成。 AFM-FM相变材料优选为FeRh，FeRhPt，FeRhPd或FeRhIr，并且还可以用作磁通门以防止磁轭焊剂泄漏到写极尖端。 AFM到FM转换的加热由位于AFM-FM相变材料附近的写入线圈和/或线圈提供，以实现更快的转换时间。