公开(公告)号：US20120257446A1

公开(公告)日：2012-10-11

申请号：US13527839

申请日：2012-06-20

Applicant: Xiaohua Lou ,  Haiwen Xi

Inventor： Xiaohua Lou ,  Haiwen Xi

IPC: G11C11/16 ,  G11C11/14

CPC classification number: G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1693 ,  Y10S977/933 ,  Y10S977/935

Abstract: A memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a word line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a unipolar voltage across the magnetic tunnel junction data cell. A diode is electrically coupled between the magnetic tunnel junction data cell and the word line or bit line. A voltage source provides the unipolar voltage across the magnetic tunnel junction data cell that writes the high resistance state and the low resistance state.

Abstract translation: 存储单元包括电耦合到位线和字线的磁性隧道结数据单元。 磁隧道结数据单元被配置为通过使单极电压跨过磁隧道结数据单元而在高电阻状态和低电阻状态之间切换。 二极管电耦合在磁性隧道结数据单元和字线或位线之间。 电压源提供写入高电阻状态和低电阻状态的磁性隧道结数据单元两端的单极电压。

公开(公告)号：US08169810B2

公开(公告)日：2012-05-01

申请号：US12497953

申请日：2009-07-06

Applicant: Wenzhong Zhu ,  Xiaohua Lou ,  Dimitar V. Dimitrov

Inventor： Wenzhong Zhu ,  Xiaohua Lou ,  Dimitar V. Dimitrov

IPC: G11C11/22

CPC classification number: G11C11/1675 ,  G11C11/161

Abstract: A magnetic tunnel junction cell includes a ferromagnetic reference layer, a ferromagnetic free layer, and a non-magnetic barrier layer separating the ferromagnetic reference layer from the ferromagnetic free layer. The magnetic tunnel junction cell has an asymmetric energy barrier for switching between a high resistance data state and a low resistance data state.

Abstract translation: 磁性隧道结电池包括铁磁参考层，铁磁自由层和将铁磁参考层与铁磁性自由层分离的非磁性阻挡层。 磁性隧道结电池具有用于在高电阻数据状态和低电阻数据状态之间切换的不对称能量势垒。

公开(公告)号：US20120087175A1

公开(公告)日：2012-04-12

申请号：US13333598

申请日：2011-12-21

Applicant: Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

Inventor： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

IPC: G11C11/00

CPC classification number: G11C11/16 ,  G11C11/1659 ,  G11C11/1675

Abstract: An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.

Abstract translation: 一种用于补偿非易失性单元中不对称写入电流的装置和方法。 单位单元包括开关装置和非对称电阻感测元件（RSE），诸如非对称电阻随机存取存储器（RRAM）元件或非对称自旋转矩传递随机存取存储器（STRAM）元件。 RSE相对于开关装置在物理上定位在单位单元内，使得用于编程RSE的硬方向与单元单元的简单编程方向对齐，并且用于编程RSE的简单方向与硬方向对齐 编程单元格

公开(公告)号：US07881096B2

公开(公告)日：2011-02-01

申请号：US12408996

申请日：2009-03-23

Applicant: Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

Inventor： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

IPC: G11C17/00

CPC classification number: G11C11/16 ,  G11C11/1659 ,  G11C11/1675

Abstract: An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.

Abstract translation: 一种用于补偿非易失性单元中不对称写入电流的装置和方法。 单位单元包括开关装置和非对称电阻感测元件（RSE），诸如非对称电阻随机存取存储器（RRAM）元件或非对称自旋转矩传递随机存取存储器（STRAM）元件。 RSE相对于开关装置在物理上定位在单位单元内，使得用于编程RSE的硬方向与单元单元的简单编程方向对齐，并且用于编程RSE的简单方向与硬方向对齐 编程单元格

公开(公告)号：US07826259B2

公开(公告)日：2010-11-02

申请号：US12361866

申请日：2009-01-29

Applicant: Xiaohua Lou

Inventor： Xiaohua Lou

IPC: G11C11/02

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L29/66984

Abstract: Spin-transfer torque memory having a free magnetic layer having a thickness extending in a out-of-plane direction and extending in a lateral direction in an in-plane direction between a first end portion and an opposing second end portion. A tunneling barrier separates a reference magnetic layer from the first end portion and forms a magnetic tunnel junction. A first electrode is in electrical communication with the reference magnetic layer and a second electrode is in electrical communication with the free magnetic layer second end portion such that current flows from the first electrode to the second electrode and passes through the free magnetic layer in the lateral direction to switch the magnetic tunnel junction between a high resistance state and a low resistance state.

Abstract translation: 旋转转矩存储器，其具有在第一端部和相对的第二端部之间具有在面外方向上延伸并且在面内方向上沿横向方向延伸的厚度的自由磁性层。 隧道势垒将参考磁性层与第一端部分开并形成磁性隧道结。 第一电极与参考磁性层电连通，并且第二电极与自由磁性层第二端部电连通，使得电流从第一电极流到第二电极，并通过横向的自由磁性层 方向将磁隧道结切换到高电阻状态和低电阻状态之间。

公开(公告)号：US20100128520A1

公开(公告)日：2010-05-27

申请号：US12502213

申请日：2009-07-13

Applicant: Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Haiwen Xi ,  Xiaobin Wang ,  Wei Tian ,  Xiaohua Lou

Inventor： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Haiwen Xi ,  Xiaobin Wang ,  Wei Tian ,  Xiaohua Lou

IPC: G11C11/14

CPC classification number: G11C11/161

Abstract: An apparatus that includes a magnetic structure including a reference layer; and a free layer; an exchange coupling spacer layer; and a stabilizing layer, wherein the exchange coupling spacer layer is between the magnetic structure and the stabilizing layer and exchange couples the free layer of the magnetic structure to the stabilizing layer.

Abstract translation: 一种包括具有参考层的磁性结构的装置; 和自由层; 交换耦合间隔层; 和稳定层，其中所述交换耦合间隔层位于所述磁性结构和所述稳定层之间并且将所述磁性结构的自由层与所述稳定层交换。

公开(公告)号：US20100102405A1

公开(公告)日：2010-04-29

申请号：US12258492

申请日：2008-10-27

Applicant: Xiaohua Lou

Inventor： Xiaohua Lou

IPC: H01L43/10

CPC classification number: H01L43/10 ,  H01L27/226

Abstract: A memory cell that includes a first electrode layer; a spin filter layer that includes a material that has exchange splitting in the conduction band; and a magnetic layer, wherein the magnetization of the second magnetic layer can be effected by the torque of electrons tunneling through, wherein the spin filter layer is between the first electrode layer and the magnetic layer.

Abstract translation: 一种存储单元，包括第一电极层; 包括在导带中具有交换分裂的材料的自旋过滤层; 以及磁性层，其中所述第二磁性层的磁化可以通过穿过的电子的转矩来实现，其中所述自旋过滤层位于所述第一电极层和所述磁性层之间。

公开(公告)号：US08686524B2

公开(公告)日：2014-04-01

申请号：US13491763

申请日：2012-06-08

Applicant: Xiaohua Lou ,  Yuankai Zheng ,  Wenzhong Zhu ,  Wei Tian ,  Zheng Gao

Inventor： Xiaohua Lou ,  Yuankai Zheng ,  Wenzhong Zhu ,  Wei Tian ,  Zheng Gao

IPC: H01L29/82

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/303 ,  H01L43/12

Abstract: A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature, a ferromagnetic pinned reference layer, and a non-magnetic spacer layer between the free layer and the reference layer. During a writing process, the metal oxide layer is non-magnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the metal oxide layer provides reduced switching currents.

Abstract translation: 具有铁磁自由层的磁性堆叠，在第一温度下为反铁磁性且在比第一温度高的第二温度下为非磁性的金属氧化物层，铁磁性固定基准层和非磁性间隔层之间， 层和参考层。 在写入过程中，金属氧化物层是非磁性的。 对于诸如磁性隧道结电池的磁存储器单元，金属氧化物层提供降低的开关电流。

公开(公告)号：US08537607B2

公开(公告)日：2013-09-17

申请号：US13477198

申请日：2012-05-22

Applicant: Xiaohua Lou

Inventor： Xiaohua Lou

IPC: G11C11/02

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L29/66984

Abstract: A staggered magnetic tunnel junction includes a free magnetic layer extending in a lateral direction between a first end portion and an opposing second end portion and a tunneling barrier disposed between a reference magnetic layer and the first end portion and forming a magnetic tunnel junction. Current flows through the free magnetic layer in the lateral direction to switch the magnetic tunnel junction between a high resistance state and a low resistance state.

Abstract translation: 交错磁隧道结包括在第一端部和相对的第二端部之间沿横向方向延伸的自由磁性层和设置在参考磁性层与第一端部之间并形成磁性隧道结的隧道势垒。 电流在横向上流过自由磁性层，以在高电阻状态和低电阻状态之间切换磁性隧道结。

公开(公告)号：US08508988B2

公开(公告)日：2013-08-13

申请号：US13527845

申请日：2012-06-20

Applicant: Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

Inventor： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

IPC: G11C11/00

CPC classification number: G11C11/161

Abstract: A magnetic tunnel junction having a compsensation element is disclosed. The magnetic tunnel junction includes a reference element, and a compensation element having an opposite magnetization moment to a magnetization moment of the reference element. A free magnetic layer is between the reference element and the compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic layer from the reference element. The free magnetic layer includes Co100-X-YFeXBY wherein X is a value being greater than 30 and Y is a value being greater than 15.

Abstract translation: 公开了一种具有补偿元件的磁性隧道结。 磁性隧道结包括参考元件和补偿元件，该补偿元件具有与参考元件的磁化矩相反的磁化力矩。 自由磁性层在参考元件和补偿元件之间，并且电绝缘和非磁性隧道势垒层将自由磁性层与参考元件分开。 自由磁性层包括Co100-X-YFeXBY，其中X是大于30的值，Y是大于15的值。