Invention Grant
- Patent Title: Magnetic memory with asymmetric energy barrier
- Patent Title (中): 具有不对称能量屏障的磁记忆体
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Application No.: US12497953Application Date: 2009-07-06
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Publication No.: US08169810B2Publication Date: 2012-05-01
- Inventor: Wenzhong Zhu , Xiaohua Lou , Dimitar V. Dimitrov
- Applicant: Wenzhong Zhu , Xiaohua Lou , Dimitar V. Dimitrov
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Mueting Raasch & Gebhardt PA
- Main IPC: G11C11/22
- IPC: G11C11/22
Abstract:
A magnetic tunnel junction cell includes a ferromagnetic reference layer, a ferromagnetic free layer, and a non-magnetic barrier layer separating the ferromagnetic reference layer from the ferromagnetic free layer. The magnetic tunnel junction cell has an asymmetric energy barrier for switching between a high resistance data state and a low resistance data state.
Public/Granted literature
- US20100084725A1 MAGNETIC MEMORY WITH ASYMMETRIC ENERGY BARRIER Public/Granted day:2010-04-08
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