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    Magnetic memory with asymmetric energy barrier
    1.
    发明授权
    Magnetic memory with asymmetric energy barrier 有权
    具有不对称能量屏障的磁记忆体

    公开(公告)号：US08634223B2

    公开(公告)日：2014-01-21

    申请号：US13446458

    申请日：2012-04-13

    Applicant: Wenzhong Zhu ,  Xiaohua Lou ,  Dimitar V. Dimitrov

    Inventor： Wenzhong Zhu ,  Xiaohua Lou ,  Dimitar V. Dimitrov

    IPC: G11C11/22

    CPC classification number: G11C11/1675 ,  G11C11/161

    Abstract: A magnetic tunnel junction memory cell includes a ferromagnetic reference layer, a ferromagnetic free layer, and a non-magnetic barrier layer separating the ferromagnetic reference layer from the ferromagnetic free layer. The magnetic tunnel junction cell has an asymmetric energy barrier for switching between a high resistance data state and a low resistance data state. Memory devices and methods are also described.

    Abstract translation: 磁性隧道结存储单元包括铁磁参考层，铁磁自由层和将铁磁参考层与铁磁性自由层分开的非磁性阻挡层。 磁性隧道结电池具有用于在高电阻数据状态和低电阻数据状态之间切换的不对称能量势垒。 还描述了存储器件和方法。

    STRAM with compensation element and method of making the same
    2.
    发明授权
    STRAM with compensation element and method of making the same 失效
    STRAM具有补偿元素和制作方法

    公开(公告)号：US08508005B2

    公开(公告)日：2013-08-13

    申请号：US13477200

    申请日：2012-05-22

    Applicant: Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    Inventor： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    IPC: H01L21/66 ,  G01R33/02 ,  G01C11/14

    CPC classification number: G01R33/093 ,  B82Y25/00 ,  G01R33/1284 ,  G11C11/161 ,  G11C11/1675

    Abstract: A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.

    Abstract translation: 自旋转移力矩存储单元包括具有易磁化轴的自由磁性层; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。 补偿元件对自由磁性层的磁化取向施加偏置场。 偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。 偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。

    STRAM WITH COMPENSATION ELEMENT AND METHOD OF MAKING THE SAME
    5.
    发明申请
    STRAM WITH COMPENSATION ELEMENT AND METHOD OF MAKING THE SAME 失效
    具有补偿元件的条纹及其制造方法

    公开(公告)号：US20120248558A1

    公开(公告)日：2012-10-04

    申请号：US13477200

    申请日：2012-05-22

    Applicant: Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    Inventor： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    IPC: H01L29/82

    CPC classification number: G01R33/093 ,  B82Y25/00 ,  G01R33/1284 ,  G11C11/161 ,  G11C11/1675

    Abstract: A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.

    Abstract translation: 自旋转移力矩存储单元包括具有易磁化轴的自由磁性层; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。 补偿元件对自由磁性层的磁化取向施加偏置场。 偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。 偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。

    Spin-transfer torque memory self-reference read method
    8.
    发明授权
    Spin-transfer torque memory self-reference read method 有权
    自旋转矩记忆自参考读取方式

    公开(公告)号：US08194444B2

    公开(公告)日：2012-06-05

    申请号：US12968441

    申请日：2010-12-15

    Applicant: Yuankai Zheng ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Dimitar V. Dimitrov ,  Wenzhong Zhu ,  Yong Lu

    Inventor： Yuankai Zheng ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Dimitar V. Dimitrov ,  Wenzhong Zhu ,  Yong Lu

    IPC: G11C11/14 ,  G11C11/00 ,  G11C7/00 ,  G11C7/02

    CPC classification number: G11C11/1673

    Abstract: Self-reference reading a magnetic tunnel junction data cell methods are disclosed. An illustrative method includes applying a read voltage across a magnetic tunnel junction data cell and forming a read current. The magnetic tunnel junction data cell has a first resistance state. The read voltage is sufficient to switch the magnetic tunnel junction data cell resistance. The method includes detecting the read current and determining if the read current remains constant during the applying step. If the read current remains constant during the applying step, then the first resistance state of the magnetic tunnel junction data cell is the resistance state that the read voltage was sufficient to switch the magnetic tunnel junction data cell to.

    Abstract translation: 公开了自参考读取磁隧道结数据单元方法。 一种说明性方法包括在磁性隧道结数据单元上施加读取电压并形成读取电流。 磁性隧道结数据单元具有第一电阻状态。 读取电压足以切换磁性隧道结数据单元电阻。 该方法包括检测读取电流并确定在施加步骤期间读取电流是否保持恒定。 如果在施加步骤期间读取电流保持恒定，则磁性隧道结数据单元的第一电阻状态是读取电压足以将磁性隧道结数据单元切换到的电阻状态。

    Memory self-reference read and write assist methods
    10.
    发明授权
    Memory self-reference read and write assist methods 有权
    内存自参考读写辅助方法

    公开(公告)号：US08045370B2

    公开(公告)日：2011-10-25

    申请号：US12869835

    申请日：2010-08-27

    Applicant: Wenzhong Zhu ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Xiaobin Wang

    Inventor： Wenzhong Zhu ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Xiaobin Wang

    IPC: G11C11/14

    CPC classification number: G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

    Abstract: A magnetic tunnel junction memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a magnetic tunnel junction memory unit includes applying a first read current through a magnetic tunnel junction data cell to form a first bit line read voltage, then applying a first magnetic field through the magnetic tunnel junction data cell forming a magnetic field modified magnetic tunnel junction data cell, and then applying a second read current thorough the magnetic field modified magnetic tunnel junction data cell to form a second bit line read voltage. The first read current being less than the second read current. Then comparing the first bit line read voltage with the second bit line read voltage to determine whether the magnetic tunnel junction data cell was in a high resistance state or a low resistance state. Methods of applying a magnetic field to the MTJ and then writing the desired resistance state are also disclosed.

    Abstract translation: 描述了磁性隧道结存储装置和自参考读写辅助方案。 一种读取磁性隧道结存储单元的自参考方法包括：通过磁性隧道结数据单元施加第一读取电流以形成第一位线读取电压，然后通过形成磁性隧道结数据单元的磁性隧道结数据单元施加第一磁场 磁场修正磁隧道结数据单元，然后通过磁场修正磁隧道结数据单元施加第二读电流，形成第二位线读电压。 第一读取电流小于第二读取电流。 然后将第一位线读取电压与第二位线读取电压进行比较，以确定磁性隧道结数据单元是处于高电阻状态还是处于低电阻状态。 还公开了将磁场施加到MTJ然后写入期望的电阻状态的方法。

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