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公开(公告)号：US08422279B2
公开(公告)日：2013-04-16
申请号：US13278247
申请日：2011-10-21
Applicant: Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Haiwen Xi , Kaizhong Gao , Olle Heinonen , Wenzhong Zhu
Inventor： Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Haiwen Xi , Kaizhong Gao , Olle Heinonen , Wenzhong Zhu
IPC: G11C11/00
CPC classification number: G11C11/1675 , B82Y10/00 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01F10/329 , H01L43/08
Abstract: Spin-transfer torque memory includes a composite free magnetic element, a reference magnetic element having a magnetization orientation that is pinned in a reference direction, and an electrically insulating and non-magnetic tunneling barrier layer separating the composite free magnetic element from the magnetic reference element. The free magnetic element includes a hard magnetic layer exchanged coupled to a soft magnetic layer. The composite free magnetic element has a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit.
Abstract translation: 自旋转矩存储器包括复合自由磁性元件，具有沿参考方向固定的磁化取向的参考磁性元件以及将复合自由磁性元件与磁性参考元件分离的电绝缘和非磁性隧道势垒层 。 自由磁性元件包括与软磁性层交换的硬磁性层。 复合自由磁性元件具有当写入电流通过自旋转移转矩存储单元时由于自旋转矩传递而改变方向的磁化取向。
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公开(公告)号：US20120206830A1
公开(公告)日：2012-08-16
申请号：US13028915
申请日：2011-02-16
Applicant: Kaizhong Gao , Olle Heinonen , Yonghua Chen
Inventor： Kaizhong Gao , Olle Heinonen , Yonghua Chen
CPC classification number: G11B21/106 , B82Y10/00 , G11B5/012 , G11B5/3948 , G11B5/4886 , G11B5/596 , G11B5/746
Abstract: In order to improve a consistent data track during writing to a storage medium, a plurality of read sensors are affixed to a transducer head. In one implementation, the transducer head includes multiple read sensors placed up-track of the write pole. In another implementation, the transducer head includes at least one read sensor placed up-track of the write pole and at least one read sensor placed down-track of the write pole. Each position of the multiple read sensors relative to the write pole may be unique. One or more read signals of selected read sensors are used to determine the read location and therefore the write pole location relative to the storage medium.
Abstract translation: 为了在写入存储介质期间改善一致的数据轨迹，多个读取传感器固定在换能器头上。 在一个实施方案中，换能器头部包括放置在写入极上的多个读取传感器。 在另一个实施方式中，换能器头包括至少一个读取传感器，其被放置在写入磁极的上方，并且至少一个读取传感器被放置在写入磁极的下方。 多个读取传感器相对于写入极的每个位置可以是唯一的。 使用所选择的读取传感器的一个或多个读取信号来确定读取位置并因此确定相对于存储介质的写入极点位置。
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公开(公告)号：US20110006275A1
公开(公告)日：2011-01-13
申请号：US12501533
申请日：2009-07-13
Applicant: Andreas Roelofs , Markus Siegert , Venugopalan Vaithyanathan , Wei Tian , Yongchul Ahn , Muralikrishnan Balakrishnan , Olle Heinonen
Inventor： Andreas Roelofs , Markus Siegert , Venugopalan Vaithyanathan , Wei Tian , Yongchul Ahn , Muralikrishnan Balakrishnan , Olle Heinonen
CPC classification number: G11C13/0007 , G11C2213/31 , G11C2213/51 , G11C2213/56 , G11C2213/77 , G11C2213/79 , H01L27/101 , H01L27/2436 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/147 , H01L45/1608
Abstract: A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.
Abstract translation: 电阻式感测存储单元包括一层结晶的镨钙锰氧化物和一层无定形的镨钙锰氧化物，其设置在形成电阻式感测存储堆的结晶镨钙锰氧化物层上。 第一和第二电极由电阻式感测存储器堆分隔开。 电阻式感测存储单元还可以包括从无定形镨钙锰氧化物层的层分离结晶镨钙锰氧化物层的氧扩散阻挡层。 方法包括沉积形成电阻式感测存储器叠层的结晶镨钙锰氧化物层上的无定形镨钙锰氧化物。
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公开(公告)号：US20100226169A1
公开(公告)日：2010-09-09
申请号：US12396905
申请日：2009-03-03
Applicant: Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
Inventor： Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
CPC classification number: G01R33/093 , B82Y25/00 , G01R33/1284 , G11C11/161 , G11C11/1675
Abstract: Spin-transfer torque memory having a compensation element is disclosed. A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis and a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.
Abstract translation: 公开了具有补偿元件的自旋转矩存储器。 自旋转移力矩存储单元包括具有磁性容易轴的自由磁性层和当写入电流通过自旋转移转矩存储单元时由于自旋转矩传递而改变方向的磁化取向; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。 补偿元件对自由磁性层的磁化取向施加偏置场。 偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。 偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。
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公开(公告)号：US08508880B2
公开(公告)日：2013-08-13
申请号：US13028915
申请日：2011-02-16
Applicant: Kaizhong Gao , Olle Heinonen , Yonghua Chen
Inventor： Kaizhong Gao , Olle Heinonen , Yonghua Chen
IPC: G11B21/02
CPC classification number: G11B21/106 , B82Y10/00 , G11B5/012 , G11B5/3948 , G11B5/4886 , G11B5/596 , G11B5/746
Abstract: In order to improve a consistent data track during writing to a storage medium, a plurality of read sensors are affixed to a transducer head. In one implementation, the transducer head includes multiple read sensors placed up-track of the write pole. In another implementation, the transducer head includes at least one read sensor placed up-track of the write pole and at least one read sensor placed down-track of the write pole. Each position of the multiple read sensors relative to the write pole may be unique. One or more read signals of selected read sensors are used to determine the read location and therefore the write pole location relative to the storage medium.
Abstract translation: 为了在写入存储介质期间改善一致的数据轨迹，多个读取传感器固定在换能器头上。 在一个实施方案中，换能器头部包括放置在写入极上的多个读取传感器。 在另一个实施方式中，换能器头包括至少一个读取传感器，其被放置在写入磁极的上方，并且至少一个读取传感器被放置在写入磁极的下方。 多个读取传感器相对于写入极的每个位置可以是唯一的。 使用所选择的读取传感器的一个或多个读取信号来确定读取位置并因此确定相对于存储介质的写入极点位置。
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Patent Agency Ranking
公开(公告)号：US08508005B2
公开(公告)日：2013-08-13
申请号：US13477200
申请日：2012-05-22
Applicant: Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
Inventor： Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
CPC classification number: G01R33/093 , B82Y25/00 , G01R33/1284 , G11C11/161 , G11C11/1675
Abstract: A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.
Abstract translation: 自旋转移力矩存储单元包括具有易磁化轴的自由磁性层; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。 补偿元件对自由磁性层的磁化取向施加偏置场。 偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。 偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。
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公开(公告)号：US20120248558A1
公开(公告)日：2012-10-04
申请号：US13477200
申请日：2012-05-22
Applicant: Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
Inventor： Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
IPC: H01L29/82
CPC classification number: G01R33/093 , B82Y25/00 , G01R33/1284 , G11C11/161 , G11C11/1675
Abstract: A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.
Abstract translation: 自旋转移力矩存储单元包括具有易磁化轴的自由磁性层; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。 补偿元件对自由磁性层的磁化取向施加偏置场。 偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。 偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。
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公开(公告)号：US20110194343A1
公开(公告)日：2011-08-11
申请号：US13086613
申请日：2011-04-14
Applicant: Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
Inventor： Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
CPC classification number: G01R33/093 , B82Y25/00 , G01R33/1284 , G11C11/161 , G11C11/1675
Abstract: Spin-transfer torque memory having a compensation element is disclosed. A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis and a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.
Abstract translation: 公开了具有补偿元件的自旋转矩存储器。 自旋转移力矩存储单元包括具有磁性容易轴的自由磁性层和当写入电流通过自旋转移转矩存储单元时由于自旋转矩传递而改变方向的磁化取向; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。 补偿元件对自由磁性层的磁化取向施加偏置场。 偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。 偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。
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公开(公告)号：US07177122B2
公开(公告)日：2007-02-13
申请号：US10694483
申请日：2003-10-27
Applicant: Chunhong Hou , Sining Mao , Eric S. Linville , Olle Heinonen , Xuefei Tang , Qing He , Eric W. Singleton , Song S. Xue
Inventor： Chunhong Hou , Sining Mao , Eric S. Linville , Olle Heinonen , Xuefei Tang , Qing He , Eric W. Singleton , Song S. Xue
IPC: G11B5/33
CPC classification number: G11B5/3932 , G11B5/3909 , G11B2005/0018 , G11B2005/3996
Abstract: A biasing system for a tri-layer reader stack magnetoresistive sensor is disclosed. The tri-layer reader stack includes a first ferromagnetic free layer, a second ferromagnetic free layer, and a magnetoresistive layer between the first and second ferromagnetic free layers. The free layers are positioned in the tri-layer reader stack such that quiescent state magnetizations of the free layers are antiparallel. A biasing layer is positioned with regard to the tri-layer reader stack, typically separated from the tri-layer reader stack by a nonmagnetic spacer layer. A biasing means is positioned such that a magnetization of the biasing layer is perpendicular to the quiescent state magnetizations of the free layers. This biasing results in the free layers having biased magnetizations directed substantially orthogonal with respect to each other.
Abstract translation: 公开了一种用于三层读取器堆叠磁阻传感器的偏置系统。 三层读取器堆叠包括第一铁磁自由层，第二铁磁自由层和在第一和第二铁磁性自由层之间的磁阻层。 自由层位于三层读取器堆叠中，使得自由层的静态状态磁化反平行。 偏置层相对于三层读取器堆叠定位，通常通过非磁性间隔层与三层读取器堆叠分离。 偏置装置被定位成使得偏置层的磁化垂直于自由层的静态状态磁化。 该偏置导致自由层具有相对于彼此基本上正交的偏磁化。
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公开(公告)号：US20050088789A1
公开(公告)日：2005-04-28
申请号：US10694483
申请日：2003-10-27
Applicant: Chunhong Hou , Sining Mao , Eric Linville , Olle Heinonen , Xuefei Tang , Qing He , Eric Singleton , Song Xue
Inventor： Chunhong Hou , Sining Mao , Eric Linville , Olle Heinonen , Xuefei Tang , Qing He , Eric Singleton , Song Xue
CPC classification number: G11B5/3932 , G11B5/3909 , G11B2005/0018 , G11B2005/3996
Abstract: A biasing system for a tri-layer reader stack magnetoresistive sensor is disclosed. The tri-layer reader stack includes a first ferromagnetic free layer, a second ferromagnetic free layer, and a magnetoresistive layer between the first and second ferromagnetic free layers. The free layers are positioned in the tri-layer reader stack such that quiescent state magnetizations of the free layers are antiparallel. A biasing layer is positioned with regard to the tri-layer reader stack, typically separated from the tri-layer reader stack by a nonmagnetic spacer layer. A biasing means is positioned such that a magnetization of the biasing layer is perpendicular to the quiescent state magnetizations of the free layers. This biasing results in the free layers having biased magnetizations directed substantially orthogonal with respect to each other.
Abstract translation: 公开了一种用于三层读取器堆叠磁阻传感器的偏置系统。 三层读取器堆叠包括第一铁磁自由层，第二铁磁自由层和在第一和第二铁磁性自由层之间的磁阻层。 自由层位于三层读取器堆叠中，使得自由层的静态状态磁化反平行。 偏置层相对于三层读取器堆叠定位，通常通过非磁性间隔层与三层读取器堆叠分离。 偏置装置被定位成使得偏置层的磁化垂直于自由层的静态状态磁化。 该偏置导致自由层具有相对于彼此基本上正交的偏磁化。
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