公开(公告)号：US20120080317A1

公开(公告)日：2012-04-05

申请号：US12894238

申请日：2010-09-30

Applicant: Venkatram Venkatasamy ,  Ming Sun ,  Ibro Tabakovic ,  Michael Xuefei Tang

Inventor： Venkatram Venkatasamy ,  Ming Sun ,  Ibro Tabakovic ,  Michael Xuefei Tang

IPC: B32B9/00 ,  C25D9/04

CPC classification number: C25D3/562 ,  C09D1/00 ,  C09D5/4488

Abstract: A method of forming CoNiP on a substrate that includes the steps of placing a substrate in an electroplating bath, the electroplating bath containing an electroplating composition, the electroplating composition including: a nickel source; a cobalt source; and at least about 0.1 M phosphorus source; and applying a deposition current to the substrate, wherein application of the deposition current to the substrate will cause a CoNiP layer having a thickness of at least about 500 nanometers to be electrodeposited on the substrate.

Abstract translation: 一种在衬底上形成CoNiP的方法，包括将衬底放置在电镀浴中的步骤，所述电镀浴含有电镀组合物，所述电镀组合物包括：镍源; 钴源; 和至少约0.1M磷源; 以及向衬底施加沉积电流，其中将沉积电流施加到衬底将使得具有至少约500纳米厚度的CoNiP层电沉积在衬底上。

公开(公告)号：US20120032131A1

公开(公告)日：2012-02-09

申请号：US13278245

申请日：2011-10-21

Applicant: Ming Sun ,  Michael Xuefei Tang ,  Insik Jin ,  Venkatram Venkatasamy ,  Philip George Pitcher ,  Nurul Amin

Inventor： Ming Sun ,  Michael Xuefei Tang ,  Insik Jin ,  Venkatram Venkatasamy ,  Philip George Pitcher ,  Nurul Amin

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/085 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/146

Abstract: Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.

公开(公告)号：US20110075472A1

公开(公告)日：2011-03-31

申请号：US12963380

申请日：2010-12-08

Applicant: Song S. Xue ,  Paul E. Anderson ,  Michael C. Kautzky ,  Xuefei Tang ,  Patrick J. Ryan

Inventor： Song S. Xue ,  Paul E. Anderson ,  Michael C. Kautzky ,  Xuefei Tang ,  Patrick J. Ryan

IPC: G11C11/00

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B2005/3996

Abstract: A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer positioned between the specular layer and the sidewall.

Abstract translation: 多层磁阻器件包括位于至少一个侧壁上的镜面层和位于镜面层与侧壁之间的铜层。

公开(公告)号：US07842938B2

公开(公告)日：2010-11-30

申请号：US12269514

申请日：2008-11-12

Applicant: Venkatram Venkatasamy ,  Ming Sun ,  Michael Xuefei Tang

Inventor： Venkatram Venkatasamy ,  Ming Sun ,  Michael Xuefei Tang

IPC: H01L47/00

CPC classification number: H01L45/146 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1266 ,  H01L45/1608 ,  H01L45/1675

Abstract: A programmable metallization cell (PMC) that includes an active electrode; a nanoporous layer disposed on the active electrode, the nanoporous layer comprising a plurality of nanopores and a dielectric material; and an inert electrode disposed on the nanoporous layer. Other embodiments include forming the active electrode from silver iodide, copper iodide, silver sulfide, copper sulfide, silver selenide, or copper selenide and applying a positive bias to the active electrode that causes silver or copper to migrate into the nanopores. Methods of formation are also disclosed.

Abstract translation: 包括有源电极的可编程金属化电池（PMC）; 设置在所述有源电极上的纳米多孔层，所述纳米多孔层包含多个纳米孔和电介质材料; 以及设置在纳米多孔层上的惰性电极。 其它实施方案包括由碘化银，碘化铜，硫化银，硫化铜，硒化银或硒化铜形成活性电极，并向活性电极施加正偏压，使活性电极引起银或铜迁移到纳米孔中。 还公开了形成方法。

公开(公告)号：US20100117170A1

公开(公告)日：2010-05-13

申请号：US12269537

申请日：2008-11-12

Applicant: Michael Xuefei Tang ,  Ming Sun ,  Dimitar V. Dimitrov ,  Patrick Ryan

Inventor： Michael Xuefei Tang ,  Ming Sun ,  Dimitar V. Dimitrov ,  Patrick Ryan

IPC: H01L29/82 ,  H01L21/00

CPC classification number: H01L43/08 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3286 ,  H01F10/329

Abstract: A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement layer forms an interface either between the free layer and the non-magnetic spacer layer or the pinned layer and the non-magnetic spacer layer.

Abstract translation: 具有铁磁性钉扎层，铁磁性自由层，其间的非磁性间隔层的磁性元件以及位于自由层和被钉扎层之间的多孔非导电电流限制层。 电流限制层在自由层和非磁性间隔层之间或被钉扎层和非磁性间隔层之间形成界面。

公开(公告)号：US20100117051A1

公开(公告)日：2010-05-13

申请号：US12269507

申请日：2008-11-12

Applicant: Wei Tian ,  Venkatram Venkatasamy ,  Ming Sun ,  Michael Xuefei Tang ,  Insik Jin ,  Dimitar V. Dimitrov

Inventor： Wei Tian ,  Venkatram Venkatasamy ,  Ming Sun ,  Michael Xuefei Tang ,  Insik Jin ,  Dimitar V. Dimitrov

IPC: H01L47/00 ,  H01L21/44

CPC classification number: H01L27/2472 ,  H01L21/76816 ,  H01L23/5226 ,  H01L27/228 ,  H01L27/2436 ,  H01L43/08 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1273 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/1625 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A memory cell that includes a first contact having a first surface and an opposing second surface; a second contact having a first surface and an opposing second surface; a memory material layer having a first surface and an opposing second surface; and a nanoporous layer having a first surface and an opposing second surface, the nanoporous layer including at least one nanopore and dielectric material, the at least one nanopore being substantially filled with a conductive metal, wherein a surface of the nanoporous layer is in contact with a surface of the first contact or the second contact and the second surface of the nanoporous layer is in contact with a surface of the memory material layer.

Abstract translation: 一种存储单元，包括具有第一表面和相对的第二表面的第一触点; 具有第一表面和相对的第二表面的第二触点; 存储材料层，其具有第一表面和相对的第二表面; 以及具有第一表面和相对的第二表面的纳米多孔层，所述纳米多孔层包括至少一个纳米孔和介电材料，所述至少一个纳米孔基本上填充有导电金属，其中所述纳米多孔层的表面与 第一接触面或第二接触面的表面和纳米多孔层的第二表面与记忆材料层的表面接触。

公开(公告)号：US07609478B2

公开(公告)日：2009-10-27

申请号：US11390681

申请日：2006-03-28

Applicant: Dehua Han ,  Xuefei Tang ,  Christopher James Thompson Rea ,  Jianhua Xue

Inventor： Dehua Han ,  Xuefei Tang ,  Christopher James Thompson Rea ,  Jianhua Xue

IPC: G11B5/31 ,  G11B5/127

CPC classification number: G11B5/1278

Abstract: A magnetic writer includes a write pole configured to reduce a skew effect during writing to a magnetic medium. A trailing portion of the write pole has a magnetic moment greater than a leading portion of the write pole.

Abstract translation: 磁性写入器包括写入磁极，其被配置为在写入磁性介质期间减小偏斜效应。 写入极的后端部分的磁矩大于写入极的引导部分。

公开(公告)号：US20070097559A1

公开(公告)日：2007-05-03

申请号：US11637585

申请日：2006-12-12

Applicant: Song Xue ,  Paul Anderson ,  Michael Kautzky ,  Xuefei Tang ,  Patrick Ryan

Inventor： Song Xue ,  Paul Anderson ,  Michael Kautzky ,  Xuefei Tang ,  Patrick Ryan

IPC: G11B5/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B2005/3996

Abstract: A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer is positioned between the specular layer and the sidewall.

Abstract translation: 多层磁阻器件包括位于至少一个侧壁上的镜面层，并且铜层位于镜面层和侧壁之间。

公开(公告)号：US08466524B2

公开(公告)日：2013-06-18

申请号：US13040155

申请日：2011-03-03

Applicant: Yuankai Zheng ,  Xiaohua Lou ,  Haiwen Xi ,  Michael Xuefei Tang

Inventor： Yuankai Zheng ,  Xiaohua Lou ,  Haiwen Xi ,  Michael Xuefei Tang

IPC: H01L29/82 ,  G11C11/02

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) has a heat assist region, magnetic tunneling junction (MTJ), and pinned region. When a first logical state is written to the MTJ with a spin polarized current, the pinned and heat assist regions each have a substantially zero net magnetic moment. When a second logical state is written to the MTJ with a static magnetic field, the pinned region has a substantially zero net magnetic moment and the heat assist region has a non-zero net magnetic moment.

公开(公告)号：US08422278B2

公开(公告)日：2013-04-16

申请号：US12974679

申请日：2010-12-21

Applicant: Haiwen Xi ,  Hongyue Liu ,  Michael Xuefei Tang ,  Antoine Khoueir ,  Song S. Xue

Inventor： Haiwen Xi ,  Hongyue Liu ,  Michael Xuefei Tang ,  Antoine Khoueir ,  Song S. Xue

IPC: G11C11/15

CPC classification number: G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: A memory unit includes a giant magnetoresistance cell electrically coupled between a write bit line and a write source line. The giant magnetoresistance cell includes a free magnetic layer separated from a first pinned magnetic layer by a first non-magnetic electrically conducting layer. A magnetic tunnel junction data cell is electrically coupled between a read bit line and a read source line. The magnetic tunnel junction data cell includes the free magnetic layer separated from a second pinned magnetic layer by an oxide barrier layer. A write current passes through the giant magnetoresistance cell to switche the giant magnetoresistance cell between a high resistance state and a low resistance state. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by magnetostatic coupling with the giant magnetoresistance cell, and be read by a read current passing though the magnetic tunnel junction data cell.

Abstract translation: 存储单元包括电耦合在写位线和写入源线之间的巨磁电阻单元。 巨磁阻单元包括通过第一非磁性导电层与第一固定磁性层分离的自由磁性层。 磁性隧道结数据单元电耦合在读取位线和读取源极线之间。 磁性隧道结数据单元包括通过氧化物阻挡层与第二固定磁性层分离的自由磁性层。 写入电流通过巨磁电阻单元，以在高电阻状态和低电阻状态之间切换巨磁电阻单元。 磁隧道结数据单元被配置为通过与巨磁电阻单元的静磁耦合在高电阻状态和低电阻状态之间切换，并且通过通过磁性隧道结数据单元的读取电流来读取。