知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

236 records (took 0.022 seconds)

    UNIPOLAR SPIN-TRANSFER SWITCHING MEMORY UNIT
    1.
    发明申请
    UNIPOLAR SPIN-TRANSFER SWITCHING MEMORY UNIT 有权
    单极转子开关记忆单元

    公开(公告)号：US20120257446A1

    公开(公告)日：2012-10-11

    申请号：US13527839

    申请日：2012-06-20

    Applicant: Xiaohua Lou ,  Haiwen Xi

    Inventor： Xiaohua Lou ,  Haiwen Xi

    IPC: G11C11/16 ,  G11C11/14

    CPC classification number: G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1693 ,  Y10S977/933 ,  Y10S977/935

    Abstract: A memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a word line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a unipolar voltage across the magnetic tunnel junction data cell. A diode is electrically coupled between the magnetic tunnel junction data cell and the word line or bit line. A voltage source provides the unipolar voltage across the magnetic tunnel junction data cell that writes the high resistance state and the low resistance state.

    Abstract translation: 存储单元包括电耦合到位线和字线的磁性隧道结数据单元。 磁隧道结数据单元被配置为通过使单极电压跨过磁隧道结数据单元而在高电阻状态和低电阻状态之间切换。 二极管电耦合在磁性隧道结数据单元和字线或位线之间。 电压源提供写入高电阻状态和低电阻状态的磁性隧道结数据单元两端的单极电压。

    Asymmetric Write Current Compensation
    2.
    发明申请
    Asymmetric Write Current Compensation 有权
    非对称写电流补偿

    公开(公告)号：US20120087175A1

    公开(公告)日：2012-04-12

    申请号：US13333598

    申请日：2011-12-21

    Applicant: Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

    Inventor： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

    IPC: G11C11/00

    CPC classification number: G11C11/16 ,  G11C11/1659 ,  G11C11/1675

    Abstract: An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.

    Abstract translation: 一种用于补偿非易失性单元中不对称写入电流的装置和方法。 单位单元包括开关装置和非对称电阻感测元件（RSE），诸如非对称电阻随机存取存储器（RRAM）元件或非对称自旋转矩传递随机存取存储器（STRAM）元件。 RSE相对于开关装置在物理上定位在单位单元内，使得用于编程RSE的硬方向与单元单元的简单编程方向对齐，并且用于编程RSE的简单方向与硬方向对齐 编程单元格

    Asymmetric write current compensation
    3.
    发明授权
    Asymmetric write current compensation 有权
    不对称写入电流补偿

    公开(公告)号：US07881096B2

    公开(公告)日：2011-02-01

    申请号：US12408996

    申请日：2009-03-23

    Applicant: Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

    Inventor： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

    IPC: G11C17/00

    CPC classification number: G11C11/16 ,  G11C11/1659 ,  G11C11/1675

    Abstract: An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.

    Abstract translation: 一种用于补偿非易失性单元中不对称写入电流的装置和方法。 单位单元包括开关装置和非对称电阻感测元件（RSE），诸如非对称电阻随机存取存储器（RRAM）元件或非对称自旋转矩传递随机存取存储器（STRAM）元件。 RSE相对于开关装置在物理上定位在单位单元内，使得用于编程RSE的硬方向与单元单元的简单编程方向对齐，并且用于编程RSE的简单方向与硬方向对齐 编程单元格

    Static magnetic field assisted resistive sense element
    5.
    发明授权
    Static magnetic field assisted resistive sense element 有权
    静磁场辅助电阻感应元件

    公开(公告)号：US08466525B2

    公开(公告)日：2013-06-18

    申请号：US13040163

    申请日：2011-03-03

    Applicant: Yuankai Zheng ,  Xiaohua Lou ,  Haiwen Xi ,  Michael Xuefei Tang

    Inventor： Yuankai Zheng ,  Xiaohua Lou ,  Haiwen Xi ,  Michael Xuefei Tang

    IPC: H01L29/82 ,  G11C11/02

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

    Abstract: Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) has a heat assist region, magnetic tunneling junction (MTJ), and pinned region. When a first logical state is written to the MTJ with a spin polarized current, the pinned and heat assist regions each have a substantially zero net magnetic moment. When a second logical state is written to the MTJ with a static magnetic field, the pinned region has a substantially zero net magnetic moment and the heat assist region has a non-zero net magnetic moment.

    Abstract translation: 用于将数据写入非易失性存储单元的装置和相关方法，例如自旋转矩传递随机存取存储器（STRAM）。 根据一些实施例，电阻感测元件（RSE）具有热辅助区域，磁性隧道结（MTJ）和固定区域。 当以旋转极化电流将第一逻辑状态写入MTJ时，固定和热辅助区域各自具有基本为零的净磁矩。 当第二逻辑状态被写入具有静态磁场的MTJ时，被钉扎区域具有基本为零的净磁矩，并且热辅助区域具有非零净磁矩。

    Asymmetric write current compensation
    7.
    发明授权
    Asymmetric write current compensation 有权
    不对称写入电流补偿

    公开(公告)号：US08320169B2

    公开(公告)日：2012-11-27

    申请号：US13333598

    申请日：2011-12-21

    Applicant: Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

    Inventor： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

    IPC: G11C11/00

    CPC classification number: G11C11/16 ,  G11C11/1659 ,  G11C11/1675

    Abstract: An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.

    Abstract translation: 一种用于补偿非易失性单元中不对称写入电流的装置和方法。 单位单元包括开关装置和非对称电阻感测元件（RSE），诸如非对称电阻随机存取存储器（RRAM）元件或非对称自旋转矩传递随机存取存储器（STRAM）元件。 RSE相对于开关装置在物理上定位在单位单元内，使得用于编程RSE的硬方向与单元单元的简单编程方向对齐，并且用于编程RSE的简单方向与硬方向对齐 编程单元格

    Static magnetic field assisted resistive sense element
    9.
    发明授权
    Static magnetic field assisted resistive sense element 有权
    静磁场辅助电阻感应元件

    公开(公告)号：US07999337B2

    公开(公告)日：2011-08-16

    申请号：US12501902

    申请日：2009-07-13

    Applicant: Yuankai Zheng ,  Xiaohua Lou ,  Haiwen Xi ,  Michael Xuefei Tang

    Inventor： Yuankai Zheng ,  Xiaohua Lou ,  Haiwen Xi ,  Michael Xuefei Tang

    IPC: H01L29/82

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

    Abstract: Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) has a heat assist region, magnetic tunneling junction (MTJ), and pinned region. When a first logical state is written to the MTJ with a spin polarized current, the pinned and heat assist regions each have a substantially zero net magnetic moment. When a second logical state is written to the MTJ with a static magnetic field, the pinned region has a substantially zero net magnetic moment and the heat assist region has a non-zero net magnetic moment.

    Abstract translation: 用于将数据写入非易失性存储单元的装置和相关方法，例如自旋转矩传递随机存取存储器（STRAM）。 根据一些实施例，电阻感测元件（RSE）具有热辅助区域，磁性隧道结（MTJ）和固定区域。 当以旋转极化电流将第一逻辑状态写入MTJ时，固定和热辅助区域各自具有基本为零的净磁矩。 当第二逻辑状态被写入具有静态磁场的MTJ时，被钉扎区域具有基本为零的净磁矩，并且热辅助区域具有非零净磁矩。

Patent Agency Ranking