-
1.发明授权Predictive thermal preconditioning and timing control for non-volatile memory cells 有权非易失性存储单元的预测性热预处理和时序控制公开(公告)号：US08154914B2
公开(公告)日：2012-04-10
申请号：US13016390
申请日：2011-01-28
Applicant: Yiran Chen , Hai Li , Harry Hongyue Liu , Dimitar V. Dimitrov , Alan Xuguang Wang , Xiaobin Wang
Inventor： Yiran Chen , Hai Li , Harry Hongyue Liu , Dimitar V. Dimitrov , Alan Xuguang Wang , Xiaobin Wang
CPC classification number: G11C11/1675 , G11C11/1659
Abstract: A method and apparatus for using thermal preconditioning to write data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a logical state is written to an unconditioned non-volatile first memory cell associated with a first block address. Thermal preconditioning is concurrently applied to a non-volatile second memory cell associated with a second block address selected in response to the first block address.
Abstract translation: 一种使用热预处理来将数据写入诸如自旋转矩传递随机存取存储器（STRAM）存储器单元的非易失性存储单元的方法和装置。 在一些实施例中，将逻辑状态写入与第一块地址相关联的无条件非易失性第一存储器单元。 热预处理同时应用于与响应于第一块地址选择的第二块地址相关联的非易失性第二存储器单元。
-
公开(公告)号：US20110134688A1
公开(公告)日：2011-06-09
申请号：US13016445
申请日：2011-01-28
Applicant: Wenzhong Zhu , Yong Lu , Xiaobin Wang , Yiran Chen , Alan Xuguang Wang , Xiaohua Lou , Haiwen Xi
Inventor： Wenzhong Zhu , Yong Lu , Xiaobin Wang , Yiran Chen , Alan Xuguang Wang , Xiaohua Lou , Haiwen Xi
CPC classification number: G11C11/16 , G11C11/1659 , G11C11/1675
Abstract: An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.
Abstract translation: 一种用于补偿非易失性单元中不对称写入电流的装置和方法。 单位单元包括开关装置和非对称电阻感测元件（RSE），诸如非对称电阻随机存取存储器（RRAM）元件或非对称自旋转矩传递随机存取存储器（STRAM）元件。 RSE相对于开关装置在物理上定位在单位单元内，使得用于编程RSE的硬方向与单元单元的简单编程方向对齐，并且用于编程RSE的简单方向与硬方向对齐 编程单元格
-
3.发明申请Predictive Thermal Preconditioning and Timing Control for Non-Volatile Memory Cells 有权非易失性记忆体的预测热预处理和时序控制公开(公告)号：US20110128778A1
公开(公告)日：2011-06-02
申请号：US13016390
申请日：2011-01-28
Applicant: Yiran Chen , Hai Li , Harry Hongyue Liu , Dimitar V. Dimitrov , Alan Xuguang Wang , Xiaobin Wang
Inventor： Yiran Chen , Hai Li , Harry Hongyue Liu , Dimitar V. Dimitrov , Alan Xuguang Wang , Xiaobin Wang
CPC classification number: G11C11/1675 , G11C11/1659
Abstract: A method and apparatus for using thermal preconditioning to write data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a logical state is written to an unconditioned non-volatile first memory cell associated with a first block address. Thermal preconditioning is concurrently applied to a non-volatile second memory cell associated with a second block address selected in response to the first block address.
Abstract translation: 一种使用热预处理来将数据写入诸如自旋转矩传递随机存取存储器（STRAM）存储器单元的非易失性存储单元的方法和装置。 在一些实施例中，将逻辑状态写入与第一块地址相关联的无条件非易失性第一存储器单元。 热预处理同时应用于与响应于第一块地址选择的第二块地址相关联的非易失性第二存储器单元。
-
4.发明授权Predictive thermal preconditioning and timing control for non-volatile memory cells 有权非易失性存储单元的预测性热预处理和时序控制公开(公告)号：US07916528B2
公开(公告)日：2011-03-29
申请号：US12414452
申请日：2009-03-30
Applicant: Yiran Chen , Hai Li , Harry Hongyue Liu , Dimitar V. Dimitrov , Alan Xuguang Wang , Xiaobin Wang
Inventor： Yiran Chen , Hai Li , Harry Hongyue Liu , Dimitar V. Dimitrov , Alan Xuguang Wang , Xiaobin Wang
CPC classification number: G11C11/1675 , G11C11/1659
Abstract: A method and apparatus for using thermal preconditioning to write data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a logical state is written to an unconditioned non-volatile first memory cell associated with a first block address. Thermal preconditioning is concurrently applied to a non-volatile second memory cell associated with a second block address selected in response to the first block address.
Abstract translation: 一种使用热预处理来将数据写入诸如自旋转矩传递随机存取存储器（STRAM）存储器单元的非易失性存储单元的方法和装置。 在一些实施例中，将逻辑状态写入与第一块地址相关联的无条件非易失性第一存储器单元。 热预处理同时应用于与响应于第一块地址选择的第二块地址相关联的非易失性第二存储器单元。
-
公开(公告)号：US07894250B2
公开(公告)日：2011-02-22
申请号：US12405918
申请日：2009-03-17
Applicant: Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
Inventor： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
IPC: G11C11/00
CPC classification number: G11C29/50 , G11C11/1659 , G11C11/1675 , G11C11/1677 , G11C11/1695 , G11C11/1697
Abstract: A method and apparatus for repairing a stuck-at defect condition in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a resistive sense element has a magnetic tunneling junction (MTJ) and a repair plane located adjacent to the resistive sense element. The repair plane injects a magnetic field in the MTJ to repair a stuck-at defect condition.
-
Patent Agency Ranking
公开(公告)号：US20110019466A1
公开(公告)日：2011-01-27
申请号：US12900303
申请日：2010-10-07
Applicant: Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
Inventor： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
CPC classification number: G11C29/50 , G11C11/1659 , G11C11/1675 , G11C11/1677 , G11C11/1695 , G11C11/1697
Abstract: A method and apparatus for repairing a stuck-at defect condition in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a resistive sense element has a magnetic tunneling junction (MTJ) and a repair plane located adjacent to the resistive sense element. The repair plane injects a magnetic field in the MTJ to repair a stuck-at defect condition.
Abstract translation: 一种用于修复诸如自旋转矩传递随机存取存储器（STRAM）的非易失性存储单元中的卡入缺陷状况的方法和装置。 在一些实施例中，电阻感测元件具有磁性隧道结（MTJ）和位于电阻感测元件附近的修复平面。 修复平面在MTJ中注入磁场以修复卡住的缺陷状况。
-
7.发明申请Predictive Thermal Preconditioning and Timing Control for Non-Volatile Memory Cells 有权非易失性记忆体的预测热预处理和时序控制公开(公告)号：US20100246251A1
公开(公告)日：2010-09-30
申请号：US12414452
申请日：2009-03-30
Applicant: Yiran Chen , Hai Li , Harry Hongyue Liu , Dimitar V. Dimitrov , Alan Xuguang Wang , Xiaobin Wang
Inventor： Yiran Chen , Hai Li , Harry Hongyue Liu , Dimitar V. Dimitrov , Alan Xuguang Wang , Xiaobin Wang
CPC classification number: G11C11/1675 , G11C11/1659
Abstract: A method and apparatus for using thermal preconditioning to write data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a logical state is written to an unconditioned non-volatile first memory cell associated with a first block address. Thermal preconditioning is concurrently applied to a non-volatile second memory cell associated with a second block address selected in response to the first block address.
Abstract translation: 一种使用热预处理来将数据写入诸如自旋转矩传递随机存取存储器（STRAM）存储器单元的非易失性存储单元的方法和装置。 在一些实施例中，将逻辑状态写入与第一块地址相关联的无条件非易失性第一存储器单元。 热预处理同时应用于与响应于第一块地址选择的第二块地址相关联的非易失性第二存储器单元。
-
公开(公告)号：US20100238721A1
公开(公告)日：2010-09-23
申请号：US12405918
申请日：2009-03-17
Applicant: Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
Inventor： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
CPC classification number: G11C29/50 , G11C11/1659 , G11C11/1675 , G11C11/1677 , G11C11/1695 , G11C11/1697
Abstract: A method and apparatus for repairing a stuck-at defect condition in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a resistive sense element has a magnetic tunneling junction (MTJ) and a repair plane located adjacent to the resistive sense element. The repair plane injects a magnetic field in the MTJ to repair a stuck-at defect condition.
Abstract translation: 一种用于修复诸如自旋转矩传递随机存取存储器（STRAM）的非易失性存储单元中的卡入缺陷状况的方法和装置。 在一些实施例中，电阻感测元件具有磁性隧道结（MTJ）和位于电阻感测元件附近的修复平面。 修复平面在MTJ中注入磁场以修复卡住的缺陷状况。
-
公开(公告)号：US20100037102A1
公开(公告)日：2010-02-11
申请号：US12269535
申请日：2008-11-12
Applicant: Yiran Chen , Hai Li , Harry Hongyue Liu , Alan Xuguang Wang , Song S. Xue
Inventor： Yiran Chen , Hai Li , Harry Hongyue Liu , Alan Xuguang Wang , Song S. Xue
CPC classification number: G11C29/846
Abstract: Various embodiments of the present invention are generally directed to an apparatus and method for providing a fault-tolerant non-volatile buddy memory structure, such as a buddy cache structure for a controller in a data storage device. A semiconductor memory array of blocks of non-volatile resistive sense memory (RSM) cells is arranged to form a buddy memory structure comprising a first set of blocks in a first location of the array and a second set of blocks in a second location of the array configured to redundantly mirror the first set of blocks. A read circuit decodes a fault map which identifies a defect in a selected one of the first and second sets of blocks and concurrently outputs data stored in the remaining one of the first and second sets of blocks responsive to a data read operation upon said buddy memory structure.
Abstract translation: 本发明的各种实施例通常涉及用于提供容错非易失性伙伴存储器结构的装置和方法，例如用于数据存储设备中的控制器的伙伴高速缓存结构。 布置非易失性电阻式感测存储器（RSM）单元块的半导体存储器阵列以形成伙伴存储器结构，其包括阵列的第一位置中的第一组块和位于阵列的第二位置的第二组块 阵列被配置为冗余地镜像第一组块。 读取电路解码故障映射，其识别所述第一和第二组块中的所选择的一个中的缺陷，并响应于所述好友存储器上的数据读取操作，同时输出存储在第一组和第二组中的剩余块中的数据 结构体。
-
公开(公告)号：US08320169B2
公开(公告)日：2012-11-27
申请号：US13333598
申请日：2011-12-21
Applicant: Wenzhong Zhu , Yong Lu , Xiaobin Wang , Yiran Chen , Alan Xuguang Wang , Xiaohua Lou , Haiwen Xi
Inventor： Wenzhong Zhu , Yong Lu , Xiaobin Wang , Yiran Chen , Alan Xuguang Wang , Xiaohua Lou , Haiwen Xi
IPC: G11C11/00
CPC classification number: G11C11/16 , G11C11/1659 , G11C11/1675
Abstract: An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.
Abstract translation: 一种用于补偿非易失性单元中不对称写入电流的装置和方法。 单位单元包括开关装置和非对称电阻感测元件（RSE），诸如非对称电阻随机存取存储器（RRAM）元件或非对称自旋转矩传递随机存取存储器（STRAM）元件。 RSE相对于开关装置在物理上定位在单位单元内，使得用于编程RSE的硬方向与单元单元的简单编程方向对齐，并且用于编程RSE的简单方向与硬方向对齐 编程单元格
-
-
-
-
-
-
-
-
-
Search Results
25
records
(took 0.023 seconds)
