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    Magnetic Device Definition with Uniform Biasing Control
    2.
    发明申请
    Magnetic Device Definition with Uniform Biasing Control 有权
    具有均匀偏置控制的磁性装置定义

    公开(公告)号：US20110006033A1

    公开(公告)日：2011-01-13

    申请号：US12502180

    申请日：2009-07-13

    申请人： Xilin Peng ,  Stacey Wakeham ,  Yifan Zhang ,  Zhongyan Wang ,  Konstantin Nikolaev ,  Mark Henry Ostrowski ,  Yonghua Chen ,  Juren Ding

    发明人： Xilin Peng ,  Stacey Wakeham ,  Yifan Zhang ,  Zhongyan Wang ,  Konstantin Nikolaev ,  Mark Henry Ostrowski ,  Yonghua Chen ,  Juren Ding

    IPC分类号： B44C1/22

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/1278 ,  G11B5/3932 ,  G11B5/3967

    摘要： A method of fabricating a magnetic device is described. A mask removing layer is formed on a layered sensing stack and a hard mask layer is formed on the mask removing layer. A first reactive ion etch is performed with a non-oxygen-based chemistry to define the hard mask layer using an imaged layer formed on the hard mask layer as a mask. A second reactive ion etch is performed with an oxygen-based chemistry to define the mask removing stop layer using the defined hard mask layer as a mask. A third reactive ion etch is performed to define the layered sensing stack using the hard mask layer as a mask. The third reactive ion etch includes an etching chemistry that performs at a lower etching rate on the hard mask layer than on the layered sensing stack.

    摘要翻译： 描述制造磁性装置的方法。 在层叠感测堆叠上形成掩模移除层，并且在掩模移除层上形成硬掩模层。 使用非氧基化学法进行第一反应离子蚀刻，以使用形成在硬掩模层上的成像层作为掩模来限定硬掩模层。 使用氧基化学法进行第二反应离子蚀刻，以使用限定的硬掩模层作为掩模来限定掩模去除停止层。 执行第三反应离子蚀刻以使用硬掩模层作为掩模来定义分层感测堆叠。 第三反应离子蚀刻包括蚀刻化学品，其在硬掩模层上的蚀刻速率低于分层感测叠层。

    Positive-working photographic process and radiation elements utilizing a chalcogenide of arsenic imaging compound and a noble plating metal
    9.
    发明授权
    Positive-working photographic process and radiation elements utilizing a chalcogenide of arsenic imaging compound and a noble plating metal 失效
    使用砷成像化合物的硫族化物和贵金属电镀金属的正面照相工艺和辐射元件

    公开(公告)号：US4075016A

    公开(公告)日：1978-02-21

    申请号：US646934

    申请日：1976-01-06

    申请人： Atanas Tzvetanov Burov ,  Penka Atanassova Simidchieva ,  Konstantin Nikolaev Kolev

    发明人： Atanas Tzvetanov Burov ,  Penka Atanassova Simidchieva ,  Konstantin Nikolaev Kolev

    IPC分类号： G03C5/56 ,  G03C1/705 ,  G03C5/00 ,  G03C5/58 ,  H05K3/00 ,  H05K3/10 ,  G03C5/24 ,  G03C1/48

    CPC分类号： G03C1/705 ,  G03C5/58 ,  H05K3/106

    摘要： Radiation sensitive elements comprising a thin radiation sensitive layer of an amorphous chalcogenide of arsenic adhering to a substrate are utilized in the production of latent images when exposed to a suitable form of radiation, the latent images being developed by utilizing the inability of radiation exposed arsenic chalcogenide to cause reduction of noble metal salts. Noble metal salts are thus decomposed by arsenic chalcogenide which has not been exposed to radiation to form a direct positive image which can subsequently be intensified by physical development and/or electroless deposition of metal possibly followed by electrolytic deposition of metal. The form of radiation employed is generally visible light and diverse procedures for producing direct positive images are disclosed.

    摘要翻译： 包含粘附于基底的砷的非晶态硫族化物的薄的辐射敏感层的辐射敏感元件在暴露于适当形式的辐射时用于潜像的生产中，潜像通过利用辐射暴露的砷硫属化物 引起贵金属盐的还原。 因此，贵金属盐由未被暴露于辐射的砷硫属元素分解，以形成直接的正像，随后可以通过金属的物理显影和/或无电沉积金属加剧金属，随后电解沉积金属。 所使用的辐射的形式通常是可见光，并且公开了用于产生直接正像的不同程序。