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198 条记录 (耗时 0.021 秒)

    Method of etching patterned layers useful as masking during subsequent etching or for damascene structures
    2.
    发明授权
    Method of etching patterned layers useful as masking during subsequent etching or for damascene structures 失效
    在随后的蚀刻或镶嵌结构期间蚀刻用作掩模的图案化层的方法

    公开(公告)号：US6080529A

    公开(公告)日：2000-06-27

    申请号：US174763

    申请日：1998-10-19

    申请人： Yan Ye ,  Pavel Ionov ,  Allen Zhao ,  Peter Chang-Lin Hsieh ,  Diana Xiaobing Ma ,  Chun Yan ,  Jie Yuan

    发明人： Yan Ye ,  Pavel Ionov ,  Allen Zhao ,  Peter Chang-Lin Hsieh ,  Diana Xiaobing Ma ,  Chun Yan ,  Jie Yuan

    IPC分类号： H01L21/302 ,  H01L21/027 ,  H01L21/311 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3213 ,  G03C5/58

    CPC分类号： H01L21/0274 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/31116 ,  H01L21/3127 ,  H01L21/3146 ,  H01L21/31612 ,  H01L21/32136

    摘要： A first embodiment of the present invention pertains to a method of patterning a semiconductor device conductive feature while permitting easy removal of any residual masking layer which remains after completion of the etching process. A multi-layered masking structure is used which includes a layer of high-temperature organic-based masking material overlaid by either a patterned layer of inorganic masking material or by a layer of patterned high-temperature imageable organic masking material. The inorganic masking material is used to transfer a pattern to the high-temperature organic-based masking material and is then removed. The high-temperature organic-based masking material is used to transfer the pattern and then may be removed if desired. This method is also useful in the pattern etching of aluminum, even though aluminum can be etched at lower temperatures. A second embodiment of the present invention pertains to a specialized etch chemistry useful in the patterning of organic polymeric layers such as low k dielectrics, or other organic polymeric interfacial layers. This etch chemistry is useful for mask opening during the etch of a conductive layer or is useful in etching damascene structures where a metal fill layer is applied over the surface of a patterned organic-based dielectric layer. The etch chemistry provides for the use of etchant plasma species which minimize oxygen, fluorine, chlorine, and bromine content.

    摘要翻译： 本发明的第一实施例涉及一种图案化半导体器件导电特征的方法，同时允许容易地去除在蚀刻工艺完成之后保留的任何残留掩模层。 使用多层掩模结构，其包括由无机掩模材料的图案化层或由图案化的高温可成像有机掩蔽材料层覆盖的高温有机基掩蔽材料层。 无机掩模材料用于将图案转印到高温有机基掩蔽材料上，然后除去。 高温有机基掩蔽材料用于转移图案，然后如果需要可以去除。 这种方法在铝的图案蚀刻中也是有用的，即使在较低温度下可以蚀刻铝。 本发明的第二个实施方案涉及可用于图案化有机聚合物层如低k电介质或其它有机聚合物界面层的专用蚀刻化学物质。 该蚀刻化学物质可用于在导电层的蚀刻过程中的掩模开口，或者可用于蚀刻镶嵌结构，其中金属填充层施加在图案化有机基介质层的表面上。 蚀刻化学提供了使氧化物，氟，氯和溴含量最小化的蚀刻剂等离子体物质的使用。

    Embossed metal gasket and method of manufacturing the same
    3.
    发明授权
    Embossed metal gasket and method of manufacturing the same 失效
    压花金属垫片及其制造方法

    公开(公告)号：US5989786A

    公开(公告)日：1999-11-23

    申请号：US820251

    申请日：1997-03-18

    申请人： Mark C. Sitko ,  Alan C. Wesley

    发明人： Mark C. Sitko ,  Alan C. Wesley

    IPC分类号： F16J15/08 ,  G03F7/00 ,  G03C5/58

    CPC分类号： F16J15/0818 ,  G03F7/0017 ,  F16J2015/085 ,  F16J2015/0856

    摘要： A method of manufacturing an embossed metal gasket includes the steps of supplying a metal gasket preform having opposed first and second planar surfaces and at least one sealing port defined therein, laminating the opposed planar surfaces with a chemical resist material, masking the chemical resist material on the first planar surface in such a manner so as to delineate a raised surface area of a bead circumscribing the sealing port, masking the chemical resist material on the second planar surface in such a manner so as to delineate a recessed surface area of the bead circumscribing the sealing port, curing the unmasked chemical resist material on the opposed planar surfaces of the preform, removing the uncured chemical resist material from the opposed planar surfaces, and exposing the gasket preform to a chemical etching agent to reduce the thickness of the gasket preform in areas which are absent cured chemical resist material.

    摘要翻译： 一种制造压花金属垫片的方法包括以下步骤：提供具有相对的第一和第二平坦表面的金属垫圈预制件和限定在其中的至少一个密封端口，用相对的平面表面与化学抗蚀材料层压，将化学抗蚀剂材料 所述第一平面以这样的方式描绘限定所述密封端口的珠的凸起表面积，以这样的方式掩蔽所述第二平坦表面上的所述化学抗蚀剂材料，以便划定所述胎圈外接的凹陷表面区域 密封端口，在预成型件的相对的平坦表面上固化未掩蔽的化学抗蚀剂材料，从相对的平面表面去除未固化的抗蚀剂材料，并将衬垫预制件暴露于化学蚀刻剂以减小垫片预制件的厚度 没有固化的化学抗蚀剂材料的区域。

    Photostructuring process
    4.
    发明授权
    Photostructuring process 失效
    照片制作过程

    公开(公告)号：US5250375A

    公开(公告)日：1993-10-05

    申请号：US812585

    申请日：1991-12-20

    申请人： Michael Sebald ,  Juergen Beck ,  Rainer Leuschner ,  Recai Sezi ,  Siegfried Birkle ,  Hellmut Ahne ,  Eberhard Kuehn

    发明人： Michael Sebald ,  Juergen Beck ,  Rainer Leuschner ,  Recai Sezi ,  Siegfried Birkle ,  Hellmut Ahne ,  Eberhard Kuehn

    IPC分类号： G03F7/26 ,  G03F7/039 ,  G03F7/40 ,  H01L21/027 ,  G03C5/58

    CPC分类号： G03F7/40 ,  G03F7/039 ,  G03F7/405

    摘要： A process for producing structures in the submicron range is characterized by the following steps:a photoresist layer comprising a polymer constituent with functional groups, which are capable of reacting with primary or secondary amines, and N-blocked imide groups, a photoinitiator which releases an acid when irradiated and a suitable solvent is deposited on to a substrate;the photoresist layer is dried;the photoresist layer is exposed in an imagewise manner;the exposed photoresist layer is subjected to a temperature treatment;the photoresist layer treated in this manner is developed with an aqueous-alkaline or organic developing agent into a photoresist structure; andthe photoresist structure is treated with a chemical agent containing a primary or secondary amine; a defined dark field loss, is adjusted thereby during development in the range of between 20 and 100 nm.

    摘要翻译： 在亚微米范围内制造结构的方法的特征在于以下步骤：包含能与伯胺或仲胺反应的官能团的聚合物组分和N-封端的酰亚胺基的光致抗蚀剂层， 酸，并将合适的溶剂沉积在基材上; 干燥光致抗蚀剂层; 光致抗蚀剂层以成像方式曝光; 曝光的光刻胶层进行温度处理; 以这种方式处理的光致抗蚀剂层用含水碱性或有机显影剂显影成光致抗蚀剂结构; 并且用含有伯胺或仲胺的化学试剂处理光刻胶结构; 在20至100nm的范围内，在显影期间调节限定的暗场损耗。

    Novel thioxanthones substituted by alpha-aminoalkyl groups
    7.
    发明授权
    Novel thioxanthones substituted by alpha-aminoalkyl groups 失效
    被α-氨基烷基取代的新型噻吨酮

    公开(公告)号：US4564578A

    公开(公告)日：1986-01-14

    申请号：US551761

    申请日：1983-11-14

    申请人： Jurgen Finter ,  Walter Fischer

    发明人： Jurgen Finter ,  Walter Fischer

    IPC分类号： C07D335/16 ,  G03C5/58 ,  G03F7/038 ,  G03G5/14 ,  H05K3/18 ,  G03C1/68 ,  C07C87/28 ,  G03C1/70 ,  G03C1/71

    CPC分类号： C07D335/16 ,  G03C5/58 ,  H05K3/185 ,  Y10S430/123

    摘要： The novel thioxanthones of the formula I ##STR1## in which R.sub.1, R.sub.2, X and W are as defined in patent claim 1, are suitable, for example, for the preparation of photosensitive, compositions of matter which are capable of undergoing condensation or addition reactions and may or may not be crosslinkable, and which in turn are used for image formation, in particular by means of electroless deposition of metals. Such compositions of matter contain, for example, a thioxanthone of the formula I, an oligomer or polymer with terminal glycidyl groups and, where relevant, a crosslinking agent and/or a salt of a metal or group Ib or VIII of the Periodic Table.

    摘要翻译： 其中R 1，R 2，X和W如权利要求1中所定义的式I（I）的新型噻吨酮适用于例如制备感光性物质组合物，其能够经历 缩合或加成反应，并且可以是或可以不是可交联的，并且其又用于图像形成，特别是通过金属的无电沉积。 这种物质组合物含有例如式I的噻吨酮，具有末端缩水甘油基的低聚物或聚合物，以及相关的元素周期表中的交联剂和/或金属或Ib或VIII族的盐。

    Radiation sensitive compositions of quaternary ammonium salt and carboxylic acid sensitizer
    9.
    发明授权
    Radiation sensitive compositions of quaternary ammonium salt and carboxylic acid sensitizer 失效
    辐射敏感组合物的季铵盐和羧酸敏化剂

    公开(公告)号：US4126468A

    公开(公告)日：1978-11-21

    申请号：US788299

    申请日：1977-04-18

    申请人： John M. Kitteridge ,  Robert J. Armstrong

    发明人： John M. Kitteridge ,  Robert J. Armstrong

    IPC分类号： G03C1/73 ,  G03C5/58 ,  G03F7/004 ,  G03C1/00 ,  G03F7/02

    CPC分类号： G03C5/58 ,  G03C1/73 ,  G03F7/004

    摘要： A radiation sensitive composition comprises a quaternary ammonium salt and a chemical sensitiser of the formula ##STR1## wherein R.sup.21 is aryl, arylakenyl or arylalkyl, R.sup.22 is aryl, alkyl, arylalkenyl, arylalkyl, carboxylic acid or salt, or hydrogen and X is carboxylic acid or salt. The quaternary ammonium salt is of the type which will accept at least one electron on exposure to radiation to form a substance capable of causing metal to be deposited onto said substance from an electroless plating solution in contact with said substance and comprising a salt of said metal and a reducing agent. A radiation sensitive plate comprises a metallic substrate coated with a radiation sensitive layer comprising a quaternary ammonium salt. The layer may be formed of the above composition. A lithographic printing plate is produced by image-wise exposing the plate, contacting the plate with an electroless plating solution and, if necessary, rendering the resultant image areas more oleophilic and the resultant non-image areas more hydrophilic.

    摘要翻译： 辐射敏感组合物包含季铵盐和式IMA化学敏化剂，其中R21是芳基，芳基芳基或芳基烷基，R22是芳基，烷基，芳基烯基，芳基烷基，羧酸或盐或氢，X是羧酸 或盐。 该季铵盐是在暴露于辐射下将接受至少一种电子的形式，以形成能够使金属从与所述物质接触的化学镀溶液中沉积到所述物质上的物质，并且包含所述金属的盐 和还原剂。 辐射敏感板包括涂覆有包含季铵盐的辐射敏感层的金属基底。 该层可以由上述组合物形成。 平版印刷版通过成像曝光该板，使板与无电镀液接触而产生，如果需要，使得所得图像区域更亲油，并且所得到的非图像区域更亲水。