公开(公告)号：US12122668B2

公开(公告)日：2024-10-22

申请号：US17858855

申请日：2022-07-06

Applicant: Brookhaven Science Associates, LLC

Inventor： Charles T. Black ,  Atikur Rahman ,  Matthew Eisaman ,  Ahsan Ashraf

IPC: B81C1/00 ,  B82Y30/00 ,  B82Y40/00 ,  G02B1/118 ,  G03F7/00 ,  G03F7/40 ,  H01L21/027 ,  H01L21/033 ,  H01L21/3065 ,  H01L21/308 ,  H01L31/0236

CPC classification number: B81C1/00031 ,  B81C1/00111 ,  B82Y30/00 ,  G02B1/118 ,  G03F7/0002 ,  G03F7/405 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/3086 ,  H01L31/02363 ,  B81C2201/0132 ,  B81C2201/0149 ,  B82Y40/00 ,  H01J2237/334 ,  Y02E10/50

Abstract: Methods for etching nanostructures in a substrate include depositing a patterned block copolymer on the substrate, the patterned block copolymer including first and second polymer block domains, applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer, the precursor infiltrating into the first polymer block domain and generating a material in the first polymer block domain, applying a removal agent to the infiltrated block copolymer to generate a patterned material, the removal agent removing the first and second polymer block domains from the substrate, and etching the substrate, the patterned material on the substrate masking the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.

公开(公告)号：US12111576B2

公开(公告)日：2024-10-08

申请号：US17977677

申请日：2022-10-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Christine Y Ouyang

IPC: G03F7/20 ,  G03F7/26 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40

CPC classification number: G03F7/32 ,  G03F7/26 ,  G03F7/38 ,  G03F7/405

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate; performing an exposing process to the photoresist layer using an extreme ultraviolet (EUV) radiation; performing an infiltration process to the photoresist layer using a metal-containing chemical; and performing a developing process to the photoresist layer to form a patterned resist layer.

公开(公告)号：US20190214277A1

公开(公告)日：2019-07-11

申请号：US16357151

申请日：2019-03-18

Applicant: Toshiba Memory Corporation

Inventor： Yoshihiro Uozumi ,  Shinsuke Kimura ,  Yoshihiro Ogawa ,  Hiroyasu Iimori ,  Tatsuhiko Koide ,  Hideaki Hirabayashi ,  Yuji Nagashima

IPC: H01L21/67 ,  G03F7/40 ,  G03F7/16 ,  H01L21/68 ,  H01L21/677

CPC classification number: H01L21/67075 ,  G03F7/162 ,  G03F7/405 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67098 ,  H01L21/6715 ,  H01L21/67739 ,  H01L21/68

Abstract: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

公开(公告)号：US10056256B2

公开(公告)日：2018-08-21

申请号：US15071243

申请日：2016-03-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Han Lai ,  Ching-Yu Chang

IPC: H01L21/311 ,  H01L21/033 ,  G03F7/40 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38 ,  H01L21/027

CPC classification number: H01L21/0337 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38 ,  G03F7/405 ,  H01L21/0274 ,  H01L21/31144

Abstract: A photoresist layer is formed over a patternable layer. The photoresist layer containing a negative tone photoresist material. An exposure process is performed to the photoresist layer. A post-exposure bake (PEB) process is performed to the photoresist layer. The photoresist layer is rinsed to develop a photoresist pattern. A primer material is applied to the photoresist pattern. The primer material is configured to: straighten a profile of the photoresist pattern, or to increase a number of deprotected acid labile group (ALG) units of the photoresist material, or to bond with the deprotected ALG units of the photoresist material. After the primer material is applied, the photoresist pattern is enlarged by coating a shrink material over the photoresist pattern, baking the shrink material, and removing portions of the shrink material. The patternable layer is patterned using the enlarged photoresist pattern as a mask.

公开(公告)号：US20180174859A1

公开(公告)日：2018-06-21

申请号：US15513954

申请日：2016-05-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Jun ZHANG ,  Yijun WANG ,  Xufei XU ,  Jie SONG

IPC: H01L21/311 ,  H01L21/027 ,  G03F7/16 ,  G03F7/20 ,  G03F7/30

CPC classification number: H01L21/31144 ,  G02F1/133345 ,  G02F1/136227 ,  G03F7/16 ,  G03F7/20 ,  G03F7/30 ,  G03F7/405 ,  H01L21/027 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/31127 ,  H01L27/1248

Abstract: It is disclosed an etching method, comprising: applying a photoresist layer on a layer to be patterned; forming a photoresist removing region and a photoresist retaining region on the photoresist layer; forming a cross linking material in the photoresist removing region, and making the cross linking material to react with the photoresist retaining region in predefined conditions to form a reacting region; removing the cross linking material, retaining the photoresist retaining region and the reacting region, and etching a layer in a region where the cross linking material is removed; and removing a shielding layer in the photoresist retaining region and the reacting region to form a patterned layer. Conditions for the reaction between the cross linking material and the photoresist are controlled to modify the width of the reacting region, and a CD smaller than the resolution limit of exposure machine is reached without photoresist residual.

公开(公告)号：US09798242B2

公开(公告)日：2017-10-24

申请号：US14952539

申请日：2015-11-25

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Jun Hatakeyama ,  Daisuke Kori ,  Tsutomu Ogihara

IPC: G03F7/40 ,  G03F7/039 ,  G03F7/20 ,  G03F7/11 ,  G03F7/32

CPC classification number: G03F7/40 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2053 ,  G03F7/2059 ,  G03F7/325 ,  G03F7/405

Abstract: In a resist pattern forming process, a rinse solution comprising (A) a heat/acid-decomposable polymer and (B) an organic solvent is effective. The pattern forming process using the rinse solution is successful in forming fine feature size patterns while minimizing the occurrence of pattern collapse.

公开(公告)号：US09773671B1

公开(公告)日：2017-09-26

申请号：US15169565

申请日：2016-05-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Meng-Tze Chen ,  Chen-Hau Wu ,  Meng-Wei Chen ,  Kuei-Shun Chen ,  Yu-Chin Huang ,  Li-Hsiang Lai ,  Shih-Ming Chang ,  Ken-Hsien Hsieh

IPC: H01L29/06 ,  H01L21/027 ,  H01L27/02 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/405 ,  G03F1/36 ,  G03F7/70433 ,  G03F7/70441

Abstract: Provided is a material composition and method for inhibiting the printing of SRAFs onto a substrate including coating a substrate with a resist layer. After coating the substrate, the resist layer is patterned to form a main feature pattern and at least one sub-resolution assist feature (SRAF) pattern within the resist layer. The main feature pattern may include resist sidewalls and a portion of a layer underlying the patterned resist layer. In various examples, a material composition is deposited over the patterned resist layer and into each of the main feature pattern and the at least one SRAF pattern. Thereafter, a material composition development process is performed to dissolve a portion of the material composition within the main feature pattern and to expose the portion of the layer underlying the patterned resist layer.

公开(公告)号：US20170240764A1

公开(公告)日：2017-08-24

申请号：US15508969

申请日：2015-09-07

Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.

Inventor： Keisuke KOJIMA

IPC: C09D151/00 ,  G03F7/031 ,  G03F7/033 ,  C23C18/31 ,  G03F7/20 ,  G03F7/26 ,  G03F7/40 ,  C09D4/00 ,  G03F7/16

CPC classification number: C09D151/003 ,  C08F8/30 ,  C08F220/20 ,  C09D4/00 ,  C23C18/31 ,  G03F7/0047 ,  G03F7/031 ,  G03F7/033 ,  G03F7/11 ,  G03F7/162 ,  G03F7/2004 ,  G03F7/26 ,  G03F7/40 ,  G03F7/405

Abstract: A new primer for electroless plating for use in a pretreatment process of electroless plating, is environmentally friendly, can be treated in fewer process steps, and can facilitate formation of fine-pitch wiring with a width of a few μm by photolithography. A photosensitive primer for forming a metal plating film on a base material through an electroless plating process has (a) a hyperbranched polymer having an ammonium group at a molecular terminal and a weight-average molecular weight of 1,000 to 5,000,000, (b) metal fine particles, (c) a polymerizable compound having three or more (meth)acryloyl groups in a molecule, and (d) a photopolymerization initiator.

公开(公告)号：US09703203B2

公开(公告)日：2017-07-11

申请号：US15172260

申请日：2016-06-03

Applicant: Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials LLC

Inventor： Vipul Jain ,  Mingqi Li ,  Huaxing Zhou ,  Jong Keun Park ,  Phillip D. Hustad ,  Jin Wuk Sung

IPC: G03F7/11 ,  G03F7/40 ,  G03F7/004 ,  G03F7/20 ,  G03F7/16 ,  G03F7/00 ,  C08F293/00 ,  H01L21/027 ,  C09D153/00 ,  G03F7/039 ,  G03F7/32

CPC classification number: G03F7/405 ,  C08F293/00 ,  C09D153/00 ,  G03F7/002 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/165 ,  G03F7/168 ,  G03F7/20 ,  G03F7/325 ,  G03F7/40 ,  H01L21/0274

Abstract: Pattern treatment compositions comprise a block copolymer and an organic solvent. The block copolymer comprises a first block and a second block. The first block comprises a unit formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group. The second block comprises a unit formed from a second monomer comprising an ethylenically unsaturated polymerizable group and a cyclic aliphatic group. Wherein: (i) the second block comprises a unit formed from a third monomer comprising an ethylenically unsaturated polymerizable group, and the second monomer and the third monomer are different; and/or (ii) the block copolymer comprises a third block comprising a unit formed from a fourth monomer comprising an ethylenically unsaturated polymerizable group, wherein the fourth monomer is different from the first monomer and the second monomer. Also provided are pattern treatment methods using the described compositions. The pattern treatment compositions and methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

公开(公告)号：US09690185B2

公开(公告)日：2017-06-27

申请号：US14619700

申请日：2015-02-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hidetami Yaegashi

IPC: G03D5/00 ,  G03D13/00 ,  G03F7/039 ,  G03F7/30 ,  G03F7/40 ,  H01L21/67

CPC classification number: G03D13/00 ,  G03F7/039 ,  G03F7/3021 ,  G03F7/405 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/67178

Abstract: A substrate processing method performs a photolithography processing on a wafer to form a resist pattern on the wafer. Ultraviolet ray is irradiated onto the resist pattern to cut side chains of the resist pattern to improve line edge roughness of the resist pattern. A processing agent is caused to enter the resist pattern and a metal is caused to be infiltrated into the resist pattern through the processing agent. Thereafter, the wafer is heated to vaporize the processing agent from the resist pattern to form a cured resist pattern.