公开(公告)号：US09773671B1

公开(公告)日：2017-09-26

申请号：US15169565

申请日：2016-05-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Meng-Tze Chen ,  Chen-Hau Wu ,  Meng-Wei Chen ,  Kuei-Shun Chen ,  Yu-Chin Huang ,  Li-Hsiang Lai ,  Shih-Ming Chang ,  Ken-Hsien Hsieh

IPC: H01L29/06 ,  H01L21/027 ,  H01L27/02 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/405 ,  G03F1/36 ,  G03F7/70433 ,  G03F7/70441

Abstract: Provided is a material composition and method for inhibiting the printing of SRAFs onto a substrate including coating a substrate with a resist layer. After coating the substrate, the resist layer is patterned to form a main feature pattern and at least one sub-resolution assist feature (SRAF) pattern within the resist layer. The main feature pattern may include resist sidewalls and a portion of a layer underlying the patterned resist layer. In various examples, a material composition is deposited over the patterned resist layer and into each of the main feature pattern and the at least one SRAF pattern. Thereafter, a material composition development process is performed to dissolve a portion of the material composition within the main feature pattern and to expose the portion of the layer underlying the patterned resist layer.