公开(公告)号：US12222650B2

公开(公告)日：2025-02-11

申请号：US17150309

申请日：2021-01-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren Zi ,  Ching-Yu Chang

IPC: G03F7/09 ,  C08L101/02 ,  G03F7/004 ,  G03F7/039 ,  G03F7/26

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist underlayer including a photoresist underlayer composition over a semiconductor substrate and forming a photoresist layer comprising a photoresist composition over the photoresist underlayer. The photoresist layer is selectively exposed to actinic radiation, and the photoresist layer is developed to form a pattern in the photoresist layer. The photoresist underlayer composition includes: a first polymer having one or more of pendant acid-labile groups and pendant epoxy groups, a second polymer having one or more crosslinking groups, an acid generator, a quencher or photodecomposable base, and a solvent. The photoresist underlayer composition includes 0 wt. % to 10 wt. % of the quencher or photodecomposable base based on a total weight of the first and second polymers.

公开(公告)号：US12210286B2

公开(公告)日：2025-01-28

申请号：US18336399

申请日：2023-06-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/26 ,  G03F7/30 ,  G03F7/38 ,  G03F7/40 ,  H01L21/02 ,  H01L21/027

Abstract: A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.

公开(公告)号：US12189296B2

公开(公告)日：2025-01-07

申请号：US17461199

申请日：2021-08-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Wei Wang ,  Wei-Han Lai ,  Ching-Yu Chang

IPC: G03F7/32 ,  G03F7/11 ,  H01L21/02 ,  H01L21/027 ,  G03F7/30

Abstract: Resist rinse solutions and corresponding lithography techniques are disclosed herein. An example lithography method includes forming a resist layer over a workpiece, exposing the resist layer to radiation, developing the exposed resist layer using a developer that removes an unexposed portion of the exposed resist layer, thereby forming a patterned resist layer, and rinsing the patterned resist layer using a rinse solution. The developer is an organic solution, and the rinse solution includes water.

公开(公告)号：US20240363452A1

公开(公告)日：2024-10-31

申请号：US18767153

申请日：2024-07-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jung-Hau Shiu ,  Ching-Yu Chang ,  Jei Ming Chen ,  Jr-Yu Chen ,  Tze-Liang Lee

IPC: H01L21/66 ,  H01L21/02

CPC classification number: H01L22/12 ,  H01L21/02186 ,  H01L21/0228

Abstract: In an embodiment, a method includes performing a first atomic layer deposition (ALD) process to form a first material layer over a first blank wafer, the first ALD process comprising: performing a first precursor sub-cycle using a first precursor; performing a first purge sub-cycle using a inert gas; and performing a second precursor sub-cycle using a second precursor and the inert gas; and performing a second purge sub-cycle for a first duration over a second blank wafer different from the first blank wafer using the inert gas to deposit first defects onto the second blank wafer.

公开(公告)号：US11948798B2

公开(公告)日：2024-04-02

申请号：US17377813

申请日：2021-07-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Yu Chang ,  Jung-Hau Shiu ,  Jen Hung Wang ,  Tze-Liang Lee

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/0331 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32133 ,  H01L21/32139

Abstract: A method for manufacturing an integrated circuit includes patterning a plurality of photomask layers over a substrate, partially backfilling the patterned plurality of photomask layers with a first material using atomic layer deposition, completely backfilling the patterned plurality of photomask layers with a second material using atomic layer deposition, removing the plurality of photomask layers to form a masking structure comprising at least one of the first and second materials, and transferring a pattern formed by the masking structure to the substrate and removing the masking structure. The first material includes a silicon dioxide, silicon carbide, or carbon material, and the second material includes a metal oxide or metal nitride material.

公开(公告)号：US11934101B2

公开(公告)日：2024-03-19

申请号：US17094706

申请日：2020-11-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren Zi ,  Ching-Yu Chang

IPC: G03F7/004 ,  G03F7/30 ,  G03F7/40 ,  H01L21/027

CPC classification number: G03F7/30 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/0044 ,  G03F7/0045 ,  G03F7/40 ,  H01L21/0274

Abstract: A method of forming a photoresist pattern includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist composition includes metal particles and a thermally stable ligand attached to the metal particles. The thermally stable ligand includes branched or unbranched, cyclic or non-cyclic, C1-C7 alkyl groups or C1-C7 fluoroalkyl groups. The C1-C7 alkyl or C1-C7 fluoroalkyl groups include one or more of —CF3, —SH, —OH, ═O, —S—, —P—, —PO2, —C(═O)SH, —C(═O)OH, —C(═O)O—, —O—, —N—, —C(═O)NH, —SO2OH, —SO2SH, —SOH, or —SO2—. The photoresist layer is selectively exposed to actinic radiation, and the photoresist layer is developed to form a pattern in the photoresist layer. In an embodiment, the method includes heating the photoresist layer before selectively exposing the photoresist layer to actinic radiation.

公开(公告)号：US20240045327A1

公开(公告)日：2024-02-08

申请号：US18446702

申请日：2023-08-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/004 ,  G03F7/32

CPC classification number: G03F7/0042 ,  G03F7/325 ,  G03F7/0047 ,  G03F7/32 ,  G03F7/30

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical.

公开(公告)号：US20230375924A1

公开(公告)日：2023-11-23

申请号：US18365302

申请日：2023-08-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: G03F7/004

CPC classification number: G03F7/0048 ,  G03F7/0042 ,  G03F7/0047 ,  G03F7/0045

Abstract: A photoresist layer is formed over a wafer. The photoresist layer includes a metallic photoresist material and one or more additives. An extreme ultraviolet (EUV) lithography process is performed using the photoresist layer. The one or more additives include: a solvent having a boiling point greater than about 150 degrees Celsius, a photo acid generator, a photo base generator, a quencher, a photo de-composed base, a thermal acid generator, or a photo sensitivity cross-linker.

公开(公告)号：US20230324806A1

公开(公告)日：2023-10-12

申请号：US18336399

申请日：2023-06-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: G03F7/26 ,  H01L21/027 ,  G03F7/30 ,  G03F7/38 ,  H01L21/02 ,  G03F7/16 ,  G03F7/004 ,  G03F7/40

CPC classification number: G03F7/26 ,  H01L21/0274 ,  G03F7/3057 ,  G03F7/38 ,  G03F7/40 ,  G03F7/168 ,  G03F7/162 ,  G03F7/0043 ,  H01L21/0209 ,  H01L21/0206

Abstract: A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.

公开(公告)号：US11782345B2

公开(公告)日：2023-10-10

申请号：US16704169

申请日：2019-12-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Chih Chen ,  Ching-Yu Chang

IPC: G03F7/038 ,  G03F7/039 ,  G03F7/09 ,  G03F7/004 ,  G03F7/20 ,  G03F7/16 ,  G03F7/32 ,  G03F7/11 ,  G03F7/38 ,  C09D165/00 ,  C09D5/00

CPC classification number: G03F7/091 ,  C09D5/006 ,  C09D165/00 ,  G03F7/038 ,  G03F7/039 ,  G03F7/11 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/2006 ,  G03F7/322 ,  G03F7/38

Abstract: A method according to the present disclosure includes providing a substrate, depositing an underlayer over the substrate, depositing a photoresist layer over the underlayer, exposing a portion of the photoresist layer and a portion of the underlayer to a radiation source according to a pattern, baking the photoresist layer and underlayer, and developing the exposed portion of the photoresist layer to transfer the pattern to the photoresist layer. The underlayer includes a polymer backbone, a polarity switchable group, a cross-linkable group bonded to the polymer backbone, and photoacid generator. The polarity switchable group includes a first end group bonded to the polymer backbone, a second end group including fluorine, and an acid labile group bonded between the first end group and the second end group. The exposing decomposes the photoacid generator to generate an acidity moiety that detaches the second end group from the polymer backbone during the baking.