公开(公告)号：US20240337925A1

公开(公告)日：2024-10-10

申请号：US18745039

申请日：2024-06-17

申请人： Inpria Corporation

发明人： Brian J. Cardineau ,  William Earley ,  Truman Wambach

IPC分类号： G03F7/004 ,  C07F7/22 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

CPC分类号： G03F7/0042 ,  C07F7/226 ,  G03F7/0045 ,  G03F7/0048 ,  G03F7/162 ,  G03F7/167 ,  G03F7/2004 ,  G03F7/32

摘要： Patterning with UV and EUV light is described with organo tin sulfide (and selenide) clusters. The clusters are solids at room temperature and are soluble in organic solvents that are not too polar. Irradiation can either fragment a carbon metal bond or crosslink unsaturated organic moieties to stabilize the irradiated material. The irradiated material then resists dissolving in organic solvents so that the un-irradiated material can be contacted with an organic solvent to develop the latent image formed with the radiation. Radiation patternable layers can be formed through coating a solution or through vapor deposition. Corresponding precursor solutions, structures and methods are described.

公开(公告)号：US12111575B2

公开(公告)日：2024-10-08

申请号：US17080396

申请日：2020-10-26

申请人： ACM Research (Shanghai) Inc.

发明人： Hui Wang ,  Fuping Chen ,  Wenjun Wang ,  Hongchao Yang ,  Voha Nuch ,  Fufa Chen ,  Jian Wang ,  Xiaoyan Zhang ,  Shu Yang

IPC分类号： G03F7/16 ,  H01L21/67 ,  H01L21/687

CPC分类号： G03F7/162 ,  H01L21/67086 ,  H01L21/6715 ,  H01L21/68742

摘要： A coater with automatic cleaning function and a coater automatic cleaning method. The coater (100,200,300,400,500,600,700,800) includes a coater chamber (101,201,301,401,501,601,701,801) capable of being filled up with cleaning solution, a substrate chuck (102,202,302,402,502,602,702,802) holding and positioning a substrate (103,203,303,403,503,603,703,803), and at least one shroud (108,208,308,408,508) capable of moving up for preventing photoresist from splashing out of the coater chamber (101,201,301,401,501,601,701,801), or moving down and immersing into the cleaning solution for cleaning. The coater (100,200,300,400,500,600,700,800) automatic cleaning method includes the following steps: turning off a liquid outlet valve (118,218,318,418A,418B,518,532,618,718,818) of the coater (100,200,300,400,500,600,700,800); filling up a coater chamber (101,201,301,401,501,601,701,801) with cleaning solution; after photoresist in the coater chamber (101,201,301,401,501,601,701,801) being dissolved into the cleaning solution, turning on the liquid outlet valve (118,218,318,418A,418B,518,532,618,718,818) and draining the cleaning solution out of the coater chamber (101,201,301,401,501,601,701,801).

公开(公告)号：US20240329525A1

公开(公告)日：2024-10-03

申请号：US18742227

申请日：2024-06-13

申请人： ASAHI KASEI KABUSHIKI KAISHA

发明人： Tomohiro YORISUE ,  Taihei INOUE ,  Yoshito IDO ,  Mitsutaka NAKAMURA ,  Tomoshige YUNOKUCHI ,  Daisuke SASANO ,  Takahiro SASAKI

IPC分类号： G03F7/022 ,  C08K5/33 ,  C08K5/375 ,  C08L77/00 ,  G03F7/004 ,  G03F7/023 ,  G03F7/031 ,  G03F7/037 ,  G03F7/038 ,  G03F7/16 ,  H05K3/02 ,  H05K3/28

CPC分类号： G03F7/0226 ,  C08L77/00 ,  G03F7/0048 ,  G03F7/0233 ,  G03F7/031 ,  G03F7/037 ,  G03F7/0387 ,  G03F7/0388 ,  G03F7/162 ,  C08K5/33 ,  C08K5/375 ,  C08L2203/20 ,  H05K3/022 ,  H05K3/287 ,  H05K2201/0154

摘要： A photosensitive resin composition containing a resin and a compound each having a structure specified by the present specification provides a cured film having excellent adhesiveness to copper wiring.

公开(公告)号：US20240319604A1

公开(公告)日：2024-09-26

申请号：US18588597

申请日：2024-02-27

申请人： Kioxia Corporation

发明人： Hirohito TANINO

IPC分类号： G03F7/16 ,  H01L21/027

CPC分类号： G03F7/162 ,  H01L21/027

摘要： A hydrophobic treatment device includes a placing table configured to place a substrate; a lid facing the placing table; a first supply port provided in the lid, and configured to discharge a hydrophobic gas with respect to the substrate; a second supply port provided in the lid, and configured to discharge an inert gas with respect to an outer periphery of the substrate; and a first adjustment mechanism configured to adjust a position of the second supply port with respect to the substrate by moving the lid in a radial direction of the substrate.

公开(公告)号：US12087592B2

公开(公告)日：2024-09-10

申请号：US18446416

申请日：2023-08-08

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chen-Fong Tsai ,  Ya-Lun Chen ,  Tsai-Yu Huang ,  Yahru Cheng ,  Huicheng Chang ,  Yee-Chia Yeo

IPC分类号： H01L21/3105 ,  G03F7/16 ,  H01L21/027 ,  H01L21/311

CPC分类号： H01L21/31058 ,  G03F7/162 ,  G03F7/168 ,  H01L21/0276 ,  H01L21/31144

摘要： To reduce a thickness variation of a spin-on coating (SOC) layer that is applied over a plurality of first and second trenches with different pattern densities as a bottom layer in a photoresist stack, a two-step thermal treatment process is performed on the SOC layer. A first thermal treatment step in the two-step thermal treatment process is conducted at a first temperature below a cross-linking temperature of the SOC layer to cause flow of the SOC layer, and a second thermal treatment step in the two-step thermal treatment process is conducted at a second temperature to cause cross-linking of the SOC layer.

公开(公告)号：US20240295821A1

公开(公告)日：2024-09-05

申请号：US18550535

申请日：2022-02-21

申请人： Tokyo Electron Limited

发明人： Hiroyuki Fujii ,  Soichiro Okada ,  Yasuyuki Ido ,  Makoto Muramatsu ,  Keisuke Yoshida ,  Nanoka Miyahara

IPC分类号： G03F7/16 ,  H01L21/027

CPC分类号： G03F7/162 ,  G03F7/168 ,  H01L21/0274

摘要： A substrate processing method includes forming a silicon carbide film on a spin on carbon film formed on a substrate; and forming a chemically amplified resist film for EUV on the silicon carbide film.

公开(公告)号：US20240295817A1

公开(公告)日：2024-09-05

申请号：US18568264

申请日：2022-06-07

申请人： SHANGHAI MICROSTART PHOTOELECTRIC TECHNOLOGY CO., LTD.

发明人： Yijiao GAO

IPC分类号： G03F7/095 ,  G03F7/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

CPC分类号： G03F7/095 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/2022 ,  G03F7/322 ,  G03F7/70383

摘要： The present disclosure pertains to a photolithography method based on bilayer photoresist, the method including applying one layer of positive photoresist on a substrate and drying, then applying one layer of negative photoresist on the positive photoresist and drying; exposing the two layers of photoresist using a photolithography mask with mask patterns or through focused direct write under a source of exposure, and then drying; developing, with developer for negative photoresist, the negative photoresist; controllably developing, with developer for positive photoresist, the positive photoresist; forming patterns on the material of the substrate through material deposition technology or etching technology; removing the photoresist. Compared with existing single-exposure photolithography technology, the method of the present disclosure is simple and a line width smaller than that of the conventional technology can be achieved by pattern contouring. The method can be widely used in semiconductor process and has extensive values of research and application.

公开(公告)号：US20240249941A1

公开(公告)日：2024-07-25

申请号：US18597065

申请日：2024-03-06

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jing Hong HUANG ,  Wei-Han LAI ,  Ching-Yu CHANG

IPC分类号： H01L21/027 ,  G03F7/16 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/8238

CPC分类号： H01L21/0276 ,  G03F7/162 ,  G03F7/168 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/823842 ,  H01L21/0332 ,  H01L21/31138

摘要： Method of manufacturing semiconductor device, includes forming protective layer over substrate having plurality of protrusions and recesses. The protective layer includes polymer composition including polymer having repeating units of one or more of:




Wherein a, b, c, d, e, f, g, h, and i are each independently H, —OH, —ROH, —R(OH)2, —NH2, —NHR, —NR2, —SH, —RSH, or —R(SH)2, wherein at least one of a, b, c, d, e, f, g, h, and i on each repeating unit is not H. R, R1, and R2 are each independently a C1-C10 alkyl group, a C3-C10 cycloalkyl group, a C1-C10 hydroxyalkyl group, a C2-C10 alkoxy group, a C2-C10 alkoxy alkyl group, a C2-C10 acetyl group, a C3-C10 acetylalkyl group, a C1-C10 carboxyl group, a C2-C10 alkyl carboxyl group, or a C4-C10 cycloalkyl carboxyl group, and n is 2-1000. A resist layer is formed over protective layer, and resist layer is patterned.

公开(公告)号：US20240231232A1

公开(公告)日：2024-07-11

申请号：US18617960

申请日：2024-03-27

申请人： Tokyo Electron Limited

发明人： Yoji Sakata ,  Masashi Tsuchiyama ,  Tsuyoshi Watanabe

IPC分类号： G03F7/16 ,  H01L21/67 ,  H01L21/677

CPC分类号： G03F7/162 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/67745

摘要： A substrate processing apparatus includes a first unit block including a first substrate transfer region, a first and a second processing modules provided to face a first and a second sides of the first substrate transfer region in a left-right direction, and a first and a second transfer mechanisms provided at the first and the second sides and configured to deliver a substrate to the first and the second processing modules; a second unit block, stacked on the first unit block, including a second substrate transfer region and a third transfer mechanism; a substrate carry-in/out block provided at a first side of a stack of the unit blocks and configured to deliver the substrate to the first and the third transfer mechanisms; a relay block provided at a second side of the stack and configured to deliver the substrate to the second and the third transfer mechanisms.

公开(公告)号：US20240219842A1

公开(公告)日：2024-07-04

申请号：US10956321

申请日：2004-09-30

申请人： Manish Chandhok ,  Wang Yueh ,  Heidi Cao

发明人： Manish Chandhok ,  Wang Yueh ,  Heidi Cao

IPC分类号： G03F7/32 ,  G03F7/16

CPC分类号： G03F7/322 ,  G03F7/162

摘要： Numerous embodiments of a method for developing a photoresist material are described. In one embodiment of the present invention, a photoresist layer is disposed over a substrate. The photoresist layer has a bulk region to form a first region and a second region. A photoresist developer made of a tetra-alkyl ammonium hydroxide compound is applied to the photoresist layer to react only with substantial portions of the first region and to prevent penetration of the developer solution into the bulk portion near the second region.