公开(公告)号：US11901189B2

公开(公告)日：2024-02-13

申请号：US16951955

申请日：2020-11-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Fong Tsai ,  Ya-Lun Chen ,  Tsai-Yu Huang ,  Yahru Cheng ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/3105 ,  H01L21/027 ,  G03F7/16 ,  H01L21/311

CPC classification number: H01L21/31058 ,  G03F7/162 ,  G03F7/168 ,  H01L21/0276 ,  H01L21/31144

Abstract: To reduce a thickness variation of a spin-on coating (SOC) layer that is applied over a plurality of first and second trenches with different pattern densities as a bottom layer in a photoresist stack, a two-step thermal treatment process is performed on the SOC layer. A first thermal treatment step in the two-step thermal treatment process is conducted at a first temperature below a cross-linking temperature of the SOC layer to cause flow of the SOC layer, and a second thermal treatment step in the two-step thermal treatment process is conducted at a second temperature to cause cross-linking of the SOC layer.

公开(公告)号：US12087592B2

公开(公告)日：2024-09-10

申请号：US18446416

申请日：2023-08-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Fong Tsai ,  Ya-Lun Chen ,  Tsai-Yu Huang ,  Yahru Cheng ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/3105 ,  G03F7/16 ,  H01L21/027 ,  H01L21/311

CPC classification number: H01L21/31058 ,  G03F7/162 ,  G03F7/168 ,  H01L21/0276 ,  H01L21/31144

Abstract: To reduce a thickness variation of a spin-on coating (SOC) layer that is applied over a plurality of first and second trenches with different pattern densities as a bottom layer in a photoresist stack, a two-step thermal treatment process is performed on the SOC layer. A first thermal treatment step in the two-step thermal treatment process is conducted at a first temperature below a cross-linking temperature of the SOC layer to cause flow of the SOC layer, and a second thermal treatment step in the two-step thermal treatment process is conducted at a second temperature to cause cross-linking of the SOC layer.

公开(公告)号：US20210272816A1

公开(公告)日：2021-09-02

申请号：US16951955

申请日：2020-11-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Fong Tsai ,  Ya-Lun Chen ,  Tsai-Yu Huang ,  Yahru Cheng ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/3105 ,  H01L21/027 ,  H01L21/311 ,  G03F7/16

Abstract: To reduce a thickness variation of a spin-on coating (SOC) layer that is applied over a plurality of first and second trenches with different pattern densities as a bottom layer in a photoresist stack, a two-step thermal treatment process is performed on the SOC layer. A first thermal treatment step in the two-step thermal treatment process is conducted at a first temperature below a cross-linking temperature of the SOC layer to cause flow of the SOC layer, and a second thermal treatment step in the two-step thermal treatment process is conducted at a second temperature to cause cross-linking of the SOC layer.