公开(公告)号：US20240347339A1

公开(公告)日：2024-10-17

申请号：US18301493

申请日：2023-04-17

Applicant: Syrnatec, Inc.

Inventor： Yash Suresh Mirchandani ,  Nishita Suresh Mirchandani ,  Alexander Usenko

IPC: H01L21/18 ,  B24B37/11 ,  H01L21/02 ,  H01L21/04 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/324 ,  H01L21/67 ,  H01L23/14

CPC classification number: H01L21/185 ,  B24B37/11 ,  H01L21/02378 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/0445 ,  H01L21/30604 ,  H01L21/30625 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/32055 ,  H01L21/3212 ,  H01L21/324 ,  H01L21/67075 ,  H01L21/67098 ,  H01L23/147

Abstract: Methods and systems for making a composite substrate is provided. The method includes depositing a silicon layer on a surface of a silicon carbide wafer. The method includes smoothing the deposited silicon layer by Chemical Mechanical Polishing (CMP) and first annealing to produce a flat silicon surface on the silicon carbide wafer. The method includes bonding the flat silicon surface of the silicon carbide wafer with a gallium oxide wafer. The method includes second annealing the bonded silicon carbide wafer and gallium oxide wafer. The method includes thinning the bonded gallium oxide wafer to a thickness of about 2 to about 25 microns.

公开(公告)号：US12106973B2

公开(公告)日：2024-10-01

申请号：US17513037

申请日：2021-10-28

Applicant: Silicon Laboratories Inc.

Inventor： Erwin Hendarto

IPC: H01L21/56 ,  B23K26/362 ,  B23K101/40 ,  H01L21/67 ,  H01L23/00 ,  H01L23/31 ,  H01L23/552

CPC classification number: H01L21/565 ,  B23K26/362 ,  H01L21/67075 ,  H01L23/3157 ,  H01L23/552 ,  H01L24/49 ,  B23K2101/40 ,  H01L2924/01047 ,  H01L2924/18165

Abstract: In one embodiment, a method includes: laser ablating an encapsulant of a semiconductor package, until a threshold amount of the encapsulant remains above one or more die of the semiconductor package; and providing at least one drop of acid onto a surface of the ablated semiconductor package to acid etch for a first time duration, to remove a remaining portion of the encapsulant above the one or more die, where after the acid etch, a die of interest is exposed and the silver bond wires of the semiconductor package are preserved.

公开(公告)号：US12053745B2

公开(公告)日：2024-08-06

申请号：US16569489

申请日：2019-09-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Yu Kuo ,  Shang-Yun Huang ,  Weibo Yu ,  Shang-Yuan Yu

IPC: B01F23/10 ,  B01J8/00 ,  H01L21/67

CPC classification number: B01F23/19 ,  B01J8/0035 ,  H01L21/67023 ,  H01L21/67075

Abstract: Chemical liquid is injected into a tank. A concentration of a first gas dissolved in the chemical liquid is detected. Based on the detected concentration of the first gas, at least one of the first gas and a second gas is injected into the tank to sustain at least one of the concentration of the first gas and a concentration of the second gas in a range of a target value.

公开(公告)号：US11986922B2

公开(公告)日：2024-05-21

申请号：US16731492

申请日：2019-12-31

Applicant: Applied Materials, Inc.

Inventor： Jason G. Fung ,  Rajeev Bajaj ,  Daniel Redfield ,  Aniruddh Jagdish Khanna ,  Mario Cornejo ,  Gregory E. Menk ,  John Watkins

IPC: B29C64/00 ,  B24B37/26 ,  B24B49/00 ,  B24B49/10 ,  B24B49/14 ,  B24B49/16 ,  B33Y10/00 ,  B33Y80/00 ,  H01L21/306 ,  H01L21/66 ,  H01L21/67 ,  B29L31/00

CPC classification number: B24B37/26 ,  B24B49/003 ,  B24B49/10 ,  B24B49/14 ,  B24B49/16 ,  B33Y10/00 ,  B33Y80/00 ,  H01L21/30625 ,  H01L21/67075 ,  H01L21/67253 ,  H01L21/67294 ,  H01L22/20 ,  B29K2995/0003 ,  B29K2995/0005 ,  B29L2031/736 ,  H01L22/12 ,  H01L22/26

Abstract: Chemical mechanical polishing (CMP) apparatus and methods for manufacturing CMP apparatus are provided herein. CMP apparatus may include polishing pads, polishing head retaining rings, and polishing head membranes, among others, and the CMP apparatus may be manufactured via additive manufacturing processes, such as three dimensional (3D) printing processes. The CMP apparatus may include wireless communication apparatus components integrated therein. Methods of manufacturing CMP apparatus include 3D printing wireless communication apparatus into a polishing pad and printing a polishing pad with a recess configured to receive a preformed wireless communication apparatus.

公开(公告)号：US20240162060A1

公开(公告)日：2024-05-16

申请号：US18551049

申请日：2022-03-09

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Masaki INABA ,  Naoko ARIMA ,  Kei SUZUKI

IPC: H01L21/67 ,  B01F23/237 ,  B01F23/70 ,  B01F35/221 ,  B01F101/58 ,  C09K13/04 ,  H01L21/306

CPC classification number: H01L21/67075 ,  B01F23/237613 ,  B01F23/711 ,  B01F35/2215 ,  C09K13/04 ,  H01L21/30604 ,  B01F2101/58 ,  B01F2215/0472

Abstract: A substrate treatment apparatus includes: a substrate treatment unit that treats a substrate with a treatment liquid containing ozone dissolved therein; a recovery tank in which the treatment liquid discharged from the substrate treatment unit is recovered; a recovery pipe that connects the substrate treatment unit to the recovery tank; a heating member that heats the treatment liquid to a first temperature in at least one of the recovery pipe and the recovery tank; a supply piping system that supplies the treatment liquid from the recovery tank to the substrate treatment unit; and an ozone gas pipe that supplies ozone gas to the supply piping system to mix the ozone gas in the treatment liquid passing through the supply piping system.

公开(公告)号：US11948804B2

公开(公告)日：2024-04-02

申请号：US17652320

申请日：2022-02-24

Applicant: Tokyo Electron Limited

Inventor： Takumi Honda

IPC: H01L21/311 ,  C09K13/04 ,  H01L21/02 ,  H01L21/306 ,  H01L21/67

CPC classification number: H01L21/31111 ,  C09K13/04 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/30604 ,  H01L21/67075 ,  H01L21/67086 ,  H01L21/67173 ,  H01L21/67253

Abstract: A substrate processing method includes preparing a phosphoric acid processing liquid, etching a substrate and increasing a concentration of the precipitation inhibitor. The phosphoric acid processing liquid is prepared by supplying a precipitation inhibitor into a phosphoric acid aqueous solution. The substrate having a silicon oxide film and a silicon nitride film is etched by immersing the substrate in a processing tub. The concentration of the precipitation inhibitor is increased by additionally supplying the precipitation inhibitor into the phosphoric acid processing liquid when a number of substrates etched has reached a first threshold value or when a silicon concentration in the phosphoric acid processing liquid has reached a second threshold value. The etching of the substrate comprises etching a new substrate by immersing the new substrate in the processing tub in which the phosphoric acid processing liquid with the increased concentration of the precipitation inhibitor is stored.

公开(公告)号：US11915946B2

公开(公告)日：2024-02-27

申请号：US17804965

申请日：2022-06-01

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Jhon Jhy Liaw

IPC: H01L29/786 ,  H01L21/033 ,  H01L21/04 ,  H01L21/67

CPC classification number: H01L21/67075 ,  H01L21/0334 ,  H01L21/048

Abstract: Semiconductor devices and their manufacturing methods are disclosed herein, and more particularly to semiconductor devices including a transistor having gate all around (GAA) transistor structures and manufacturing methods thereof. Different thickness in an epi-growth scheme is adopted to create different sheet thicknesses within the same device channel regions for use in manufacturing vertically stacked nano structure (e.g., nanosheet, nanowire, or the like) GAA devices. A GAA device may be formed with a vertical stack of nanostructures in a channel region with a topmost nanostructure of the vertical stack being thicker than the other nanostructures of the vertical stack. Furthermore, an LDD portion of the topmost nano structure may be formed as the thickest of the nanostructures in the vertical stack.

公开(公告)号：US11810796B2

公开(公告)日：2023-11-07

申请号：US17270332

申请日：2019-09-16

Applicant: LAM RESEARCH AG

Inventor： Christoph Semmelrock ,  Ulrich Tschinderle ,  Reinhard Sellmer ,  Walter Esterl

IPC: H01L21/67

CPC classification number: H01L21/6704 ,  H01L21/67075

Abstract: The present invention relates to a method for treating the surface of a wafer with multiple liquids, comprising rotating the surface of the wafer and discharging different liquid streams onto the rotating surface in a sequence from separate outlets, wherein the discharge of liquid streams which are contiguous in the sequence overlaps during a transition phase, and wherein during the transition phase the liquid streams merge after exiting said outlets to form a merged liquid stream before impacting the rotating surface. The invention also provides a liquid dispensing device incorporating a housing holding two or more liquid delivery tubes, wherein the tubes' outlets are inwardly angled towards one another, such that in use liquid streams delivered from the outlets of the two or more liquid delivery tubes merge to form a merged liquid stream.

公开(公告)号：US11784064B2

公开(公告)日：2023-10-10

申请号：US16950389

申请日：2020-11-17

Applicant: Kioxia Corporation

Inventor： Yasuhito Yoshimizu ,  Yuya Akeboshi ,  Fuyuma Ito ,  Hakuba Kitagawa

IPC: H01L21/67 ,  H01L21/3213 ,  H01L21/311

CPC classification number: H01L21/67075 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/32139 ,  H01L21/6708 ,  H01L21/67046 ,  H01L21/67086

Abstract: According to an embodiment, a substrate treatment apparatus includes a hair member including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While a tip part of the hair member is contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal, and the metal is removed with etching.

公开(公告)号：US20230268228A1

公开(公告)日：2023-08-24

申请号：US18308743

申请日：2023-04-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ken-Yu Chang ,  Chun-I Tsai ,  Ming-Hsing Tsai ,  Wei-Jung Lin

IPC: H01L21/768 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/67

CPC classification number: H01L21/76846 ,  H01L21/67075 ,  H01L21/76877 ,  H01L21/823418 ,  H01L21/823475 ,  H01L29/66545

Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back by a wet etching process. After etching back the portion of the barrier layer, an underlying dielectric welding layer is exposed. A conductive material is formed along the barrier layer.