公开(公告)号：US20190214277A1

公开(公告)日：2019-07-11

申请号：US16357151

申请日：2019-03-18

Applicant: Toshiba Memory Corporation

Inventor： Yoshihiro Uozumi ,  Shinsuke Kimura ,  Yoshihiro Ogawa ,  Hiroyasu Iimori ,  Tatsuhiko Koide ,  Hideaki Hirabayashi ,  Yuji Nagashima

IPC: H01L21/67 ,  G03F7/40 ,  G03F7/16 ,  H01L21/68 ,  H01L21/677

CPC classification number: H01L21/67075 ,  G03F7/162 ,  G03F7/405 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67098 ,  H01L21/6715 ,  H01L21/67739 ,  H01L21/68

Abstract: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.